CXES4271 CXES4271A是用于外部N沟道MOSFET的高压侧配电控制器，允许+12V、+19V或+5V电源导轨。错误的输入电压保护功能保护错误的输入适配器插入，当输入电压超出目标输入电压范围时，IC关闭。过电流保护通过使用外部感测电阻器上的电压降来监测输出电流，当输出电流达到触发点时，IC将关闭。CXES4271A CXES4271在通电期间还提供短路保护。该设备监测VOUT电压以进行短路检测，如果检测到短路情况，IC将关闭。其他功能包括指示输出电压已准备好的POK输出和逻辑控制关机模式。
·用于外部N沟道MOSFET的高端驱动器
·欠压锁定（UVLO）
·错误的车辆识别号输入电压保护
·输出欠压保护（UVP）
·通电期间的短路保护（SCP）
·过电流保护（OCP）
·可选择的车辆识别号监视器电压
·关闭功能
·电源正常（POK）功能
·提供无铅和绿色设备（符合RoHS）
[ CXES4271 ]
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产品概述 返回TOP
产品特点 返回TOP
· High-Side Driver for an External N-Channel MOSFET
· Under-Voltage Lockout (UVLO)
· Wrong VIN Input Voltage Protection
· Output Under-Voltage Protection (UVP)
· Short-Circuit Protection During Power-up (SCP)
· Over-Current Protection (OCP)
· Selectable VIN Monitor Voltage
· Shutdown Function
· Power Okay (POK) Function
· Lead Free and Green Devices Available (RoHS Compliant)
应用范围 返回TOP
· AIO Computers
· Notebooks
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产品封装图 返回TOP
电路原理图 返回TOP
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Products > Switch > Power Distribution Controller |
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Part_No |
Package |
No.of Channel |
External Power Switch Type |
Input Voltage (V) |
Quescint Current (uA) |
Wrong Input Voltage Protection |
Inpute Voltage UVLO |
SCP |
OCP (A) |
OVP |
UVP |
EN |
High/ Low EN |
POK |
|
|
min |
max |
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SOP8 TDFN2x2-8 |
1 |
N-Channel MOSFET |
10 |
26 |
750 |
Y |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
|
|
TDFN3x3-10 |
1 |
N-Channel MOSFET |
5 |
26 |
500 |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
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|
TDFN3x3-10 |
1 |
N-channel MOSFET |
5 |
26 |
500 |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
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Switch> Analog Switch |
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Part_No |
Package & Pins |
VDD Voltage (V) |
IDD, Supply Current (mA) |
Input Voltage (max)(V) |
Power Switch On Resistance(milohm) |
Turn-On Time(ms) |
Turn-Off Time(ms) |
|
|
min |
max |
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WLCSP1.2x1.2-9 |
2.9 |
5.5 |
35 |
0~5.5 |
0.2 |
5 |
1 |
|
|
WLCSP1.2x0.8-6 |
1.5 |
5.5 |
20 |
1.5-5.5 |
22 |
4.4 |
36.5 |
|
|
WLCSP 1.42x0.92-6 |
1.7 |
3.6 |
0.5 |
VDD-5.5~VDD |
0.2 |
0.1 |
1 |
|
|
Switch> DrMOS |
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Part_No |
Package |
Description |
Topology |
# of PWM Outputs |
Drive Lout (A) |
Vin (V) |
Fmax (Khz) |
R-Top (milohm) |
R-Sync (milohm) |
Iq (No load) (uA) |
En pin |
Sync Pin |
PSM/ CCM pin |
|
|
min |
max |
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TQFN4x 4-23P |
High-Performance, High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
8 |
4.5 |
25 |
1500 |
25 |
7 |
90 |
Y |
N |
Y |
|
|
TQFN4x 4-23P |
High-Performance, High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
6 |
4.5 |
25 |
1500 |
30 |
12 |
90 |
Y |
N |
Y |
|
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TQFN5x 5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel |
MOSFET1 |
13 |
4.5 |
25 |
1500 |
9.7 |
5.2 |
90 |
Y |
N |
Y |
|
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TQFN5x 5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
15 |
4.5 |
25 |
1500 |
8 |
4.5 |
90 |
Y |
N |
Y |
|
|
TQFN5x 5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
15 |
4.5 |
25 |
1500 |
8 |
4.5 |
90 |
Y |
N |
Y |
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