CXSD62116A|B|C

CXSD62116A|B|C允许宽输入电压它可以是一个5~12V的电源电压,也可以是两个不同应用的电源电压。上电复位(POR)电路监测VCC电源电压以防止逻辑控制错误。内置数字软启动电路防止输出电压过冲以及限制输入电流。内线0.6V高精度温度补偿参考电压设计满足低输出电压应用的要求

CXSD62116A|B|C电压模式固定300kHz开关频率和同步降压控制器两个电源电压模式

产品手册

产品订购

产品简介

目录HDc嘉泰姆

1.产品概述                       2.产品特点HDc嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 HDc嘉泰姆
5.产品封装图                     6.电路原理图                   HDc嘉泰姆
7.功能概述                        8.相关产品HDc嘉泰姆

一,产品概述(General Description)         HDc嘉泰姆
        The CXSD62116A/B/C is a voltage mode, fixed 300kHz-switching frequency,HDc嘉泰姆
and synchronous buck controller. The CXSD62116A/B/C allows wide input voltageHDc嘉泰姆
that is either a single 5~12V or two supply voltage(s) for various applications.HDc嘉泰姆
A power-on-reset (POR) circuit monitors the VCC supply voltage to preventHDc嘉泰姆
wrong logic controls. A built-in digital soft-start circuit prevents the outputHDc嘉泰姆
voltages from overshoot as well as limits the input current. An internalHDc嘉泰姆
0.6V temperature-compensated reference voltage with high accuracy isHDc嘉泰姆
designed to meet the requirement of low output voltage applications.HDc嘉泰姆
The CXSD62116A/B/C provides excellent output voltage regulations againstHDc嘉泰姆
load current variation.HDc嘉泰姆
     The controller’s over-current protection monitors the output currentHDc嘉泰姆
by using the voltage drops across the RDS(ON)of low-side MOSFET,HDc嘉泰姆
eliminating the need for a current sensing resistor that features highHDc嘉泰姆
efficiency and low cost.HDc嘉泰姆
     The CXSD62116A/B/C also integrates over-voltage protection (OVP) andHDc嘉泰姆
under-voltage protection circuit which moni-tors the FB voltage to preventHDc嘉泰姆
the PWM output from over and under voltage.HDc嘉泰姆
     The CXSD62116A/B/C is available in a simple SOP-8P package.HDc嘉泰姆
二.产品特点(Features)HDc嘉泰姆
Wide Operation Supply Voltage from 5V to 12VHDc嘉泰姆
Power-On-Reset Monitoring on VCC HDc嘉泰姆
Excellent Reference Voltage RegulationsHDc嘉泰姆
- 0.6V Internal ReferenceHDc嘉泰姆
- ±1% Over Temperature RangeHDc嘉泰姆
Integrated Soft-StartHDc嘉泰姆
Automatic PSM/PWM ModesHDc嘉泰姆
Voltage Mode PWM Operation with 90% (Max.) Duty CycleHDc嘉泰姆
Under-Voltage ProtectionHDc嘉泰姆
Adjustable Over-Current Protection ThresholdHDc嘉泰姆
- Sensing the RDS(ON) of Low-Side MOSFETHDc嘉泰姆
Over-Voltage ProtectionHDc嘉泰姆
Under-Voltage ProtectionHDc嘉泰姆
Simple SOP-8P PackageHDc嘉泰姆
Lead Free and Green Devices AvailableHDc嘉泰姆
(RoHS Compliant)HDc嘉泰姆
三,应用范围 (Applications)HDc嘉泰姆
Graphic CardsHDc嘉泰姆
DSL, Switch HUBHDc嘉泰姆
Wireless LanHDc嘉泰姆
Notebook ComputerHDc嘉泰姆
Mother BoardHDc嘉泰姆
LCD Monitor/TVHDc嘉泰姆

四.下载产品资料PDF文档 HDc嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持HDc嘉泰姆

 QQ截图20160419174301.jpgHDc嘉泰姆

五,产品封装图 (Package)HDc嘉泰姆
HDc嘉泰姆
六.电路原理图HDc嘉泰姆

blob.pngHDc嘉泰姆
七,功能概述HDc嘉泰姆
Layout ConsiderationHDc嘉泰姆
In any high switching frequency converter, a correct lay-out is important to ensure proper operation of theHDc嘉泰姆
regulator. With power devices switching at 300kHz,the resulting current transient will cause voltage spike acrossHDc嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionHDc嘉泰姆
of the PWM MOSFET. Before turn-off, the MOSFET is car rying the full load current. During turn-off, current stopsHDc嘉泰姆
flowing in the MOSFET and is free-wheeling by the lower MOSFET and parasitic diode. Any parasitic inductance ofHDc嘉泰姆
the circuit generates a large voltage spike during the switching interval. In general, using short and wide printedHDc嘉泰姆
circuit traces should minimize interconnecting imped-HDc嘉泰姆

Layout Consideration (Cont.)HDc嘉泰姆
ances and the magnitude of voltage spike. And signal and power grounds are to be kept separate till combinedHDc嘉泰姆

using ground plane construction or single point grounding. Figure 8. illustrates the layout, with bold linesHDc嘉泰姆
indicating high current paths; these traces must be short and wide. Components along the bold lines should beHDc嘉泰姆

placed lose together. Below is a checklist for your layout:HDc嘉泰姆

- Keep the switching nodes (UGATE, LGATE, and PHASE) away from sensitive small signal nodes since theseHDc嘉泰姆

nodes are fast moving signals. Therefore, keep traces to these nodes as short as possible.HDc嘉泰姆

- The traces from the gate drivers to the MOSFETs (UG and LG) should be short and wide.HDc嘉泰姆

- Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Minimiz-HDc嘉泰姆
ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.HDc嘉泰姆
- Decoupling capacitor, compensation component, the resistor dividers, and boot capacitors should be closeHDc嘉泰姆
their pins. (For example, place the decoupling ceramic capacitor near the drain of the high-side MOSFET asHDc嘉泰姆
close as possible. The bulk capacitors are also placed near the drain).HDc嘉泰姆
- The input capacitor should be near the drain of the up-per MOSFET; the output capacitor should be near theHDc嘉泰姆
loads. The input capacitor GND should be close to the output capacitor GND and the lower MOSFET GND.HDc嘉泰姆
- The drain of the MOSFETs (VIN and PHASE nodes) should be a large plane for heat sinking.HDc嘉泰姆
- The ROCSET resistance should be placed near the IC as close as possible.Close to ICHDc嘉泰姆
Figure 8. Layout GuidelinesHDc嘉泰姆

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COTHDc嘉泰姆

1HDc嘉泰姆

2HDc嘉泰姆

15HDc嘉泰姆

6HDc嘉泰姆

25HDc嘉泰姆

2HDc嘉泰姆

NHDc嘉泰姆

550HDc嘉泰姆

CXSD62105HDc嘉泰姆

TQFN4x4-24HDc嘉泰姆

COTHDc嘉泰姆

1HDc嘉泰姆

2HDc嘉泰姆

15HDc嘉泰姆

6HDc嘉泰姆

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NHDc嘉泰姆

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CXSD62106|AHDc嘉泰姆

TQFN4x4-4HDc嘉泰姆

TQFN3x3-20HDc嘉泰姆

COTHDc嘉泰姆

1HDc嘉泰姆

2HDc嘉泰姆

20HDc嘉泰姆

3HDc嘉泰姆

28HDc嘉泰姆

0.75HDc嘉泰姆

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800HDc嘉泰姆

CXSD62107HDc嘉泰姆

TQFN3x3-16HDc嘉泰姆

COTHDc嘉泰姆

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1.8HDc嘉泰姆

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0.75HDc嘉泰姆

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CXSD62108HDc嘉泰姆

QFN3.5x3.5-14HDc嘉泰姆

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COTHDc嘉泰姆

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0.75HDc嘉泰姆

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QFN3x3-20HDc嘉泰姆

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1.8|1.5|0.5HDc嘉泰姆

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740HDc嘉泰姆

CXSD62111HDc嘉泰姆

TQFN4x4-24HDc嘉泰姆

|QFN3x3-20HDc嘉泰姆

CMHDc嘉泰姆

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CXSD62112HDc嘉泰姆

TDFN3x3-10HDc嘉泰姆

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0.5HDc嘉泰姆

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250HDc嘉泰姆

CXSD62113|CHDc嘉泰姆

TQFN3x3-20HDc嘉泰姆

COTHDc嘉泰姆

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CXSD62113EHDc嘉泰姆

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CXSD62115HDc嘉泰姆

QFN4x4-24HDc嘉泰姆

VMHDc嘉泰姆

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60HDc嘉泰姆

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0.85HDc嘉泰姆

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CXSD62116A|B|CHDc嘉泰姆

SOP-8PHDc嘉泰姆

VMHDc嘉泰姆

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CXSD62118HDc嘉泰姆

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CXSD62119HDc嘉泰姆

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REFIN SettingHDc嘉泰姆

5HDc嘉泰姆

700HDc嘉泰姆

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QFN 3x3 20HDc嘉泰姆

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1.8|1.5 1.35|1.2 0.5HDc嘉泰姆

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COTHDc嘉泰姆

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0.75HDc嘉泰姆

5HDc嘉泰姆

180HDc嘉泰姆

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