CXSD62104

CXSD62104集成了双降压、恒定时间、同步PWM控制器(为每个通道驱动双N通道mosfet)和
两个低损耗稳压器以及各种保护装置集成到一个芯片中。PWM控制器降低电池的高电压以产生NB的低电压应用。PWM1和PWM2的输出可以从2V调整到5.5V通过设置一个从VOUTx到GND的电阻分压器。线性调节器为备用电源提供5V和3.3V输出

CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V

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产品简介

目录1R6嘉泰姆

1.产品概述                       2.产品特点1R6嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 1R6嘉泰姆
5.产品封装图                     6.电路原理图                   1R6嘉泰姆
7.功能概述                        8.相关产品1R6嘉泰姆

一,产品概述(General Description)         1R6嘉泰姆

        The CXSD62104  integrates dual step-down, constant-ontime, synchronous1R6嘉泰姆

PWM controllers (that drives dual N-channel MOSFETs for each channel) and1R6嘉泰姆
two low drop-out regulators as well as various protections into a chip.The PWM1R6嘉泰姆
controllers step down high voltage of a battery to generate low-voltage for NB1R6嘉泰姆
applications. The output of PWM1 and PWM2 can be adjusted from 2V to 5.5V1R6嘉泰姆
by setting a resistive voltage-divider from VOUTx to GND.The linear regulators1R6嘉泰姆
provide 5V and 3.3V output for standby power supply. The linear regulators1R6嘉泰姆

provide up to 100mA output current. When the PWMx output voltage is higher 1R6嘉泰姆

than LDOx bypass threshold, the related LDOx regulator is shut off and its 1R6嘉泰姆

output is connected to VOUTx by internal switchover MOSFET. It can save power dissipation.1R6嘉泰姆
     The CXSD62104 provides excellent transient response and accurate DC 1R6嘉泰姆

output voltage in either PFM or PWM Mode.In Pulse-Frequency Mode (PFM), 1R6嘉泰姆

the CXSD62104 provides very high efficiency over light to heavy loads with 1R6嘉泰姆

loading-modulated switching frequencies. The Forced-PWM mode works nearly 1R6嘉泰姆

at constant frequency for low-noise requirements. The unique ultrasonic mode1R6嘉泰姆

 maintains the switching frequency above 25KHz, which eliminates noise in audio applications.1R6嘉泰姆

     The CXSD62104 is equipped with accurate sourcing cur-rent-limit, output1R6嘉泰姆

under-voltage and output over-voltage protections, being perfect for NB 1R6嘉泰姆

applications. A 1.7ms (typ.) digital soft-start can reduce the start-up current. 1R6嘉泰姆

A soft-stop function actively discharges the output capaci-tors by the discharge 1R6嘉泰姆

device. The CXSD62104 has individual enable controls for PWM channels and 1R6嘉泰姆

LDOs. Pulling both ENPWM pin and ENLDO pin low shuts down the whole chip1R6嘉泰姆

with low quiescent current close to zero.1R6嘉泰姆
      The CXSD62104 is available in a TQFN4x4-24A package.1R6嘉泰姆
二.产品特点(Features)1R6嘉泰姆
Wide Input Voltage Range from 6V to 25V1R6嘉泰姆
Provide 4 Independent Outputs with ±1.5% Accu-1R6嘉泰姆
racy Over-Temperature1R6嘉泰姆
- PWM1 Controller with Adjustable (2V to 5.5V) Out-put1R6嘉泰姆
PWM2 Controller with Adjustable (2V to 5.5V) Out-put1R6嘉泰姆
100mA Low Dropout Regulator (LDO5) with Fixed 5V Output1R6嘉泰姆
100mA Low Dropout Regulator (LDO3) with Fixed 3.3V Output1R6嘉泰姆
Excellent Line/Load Regulations about ±1.5% Over-Temperature Range1R6嘉泰姆
±1%, (±1.5%, 50μA) 2.0V Reference Voltage Output1R6嘉泰姆
Built-In POR Control Scheme Implemented1R6嘉泰姆
Selectable Forced-PWM or Automatic PFM/PWM1R6嘉泰姆
(with Selectable Ultrasonic Operation)1R6嘉泰姆
Constant-On-Time Control Scheme with Frequency1R6嘉泰姆
Compensation for PWM Mode1R6嘉泰姆
Selectable Switching Frequency in PWM Mode1R6嘉泰姆
Built-in Digital Soft-Start for PWM Outputs and Soft-1R6嘉泰姆
Stop for PWM Outputs and LDO Outputs1R6嘉泰姆
Integrated Bootstrap Forward P-CH MOSFET1R6嘉泰姆
High Efficiency over Light to Full Load Range (PWMs)1R6嘉泰姆
Built-in Power Good Indicators (PWMs)1R6嘉泰姆
Independent Enable Inputs (PWMs, LDO)1R6嘉泰姆

70% Under-Voltage and 125% Over-Voltage Protec-tions (PWM)1R6嘉泰姆

Adjustable Current-Limit Protection (PWMs)1R6嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)1R6嘉泰姆
Over-Temperature Protection1R6嘉泰姆
4mmx4mm Thin QFN-24 (TQFN4x4-24A) package1R6嘉泰姆
Lead Free and Green Device Available (RoHS Compliant)
1R6嘉泰姆

三,应用范围 (Applications)1R6嘉泰姆

Notebook and Sub-Notebook Computers1R6嘉泰姆

Portable Devices1R6嘉泰姆
DDR1, DDR2, and DDR3 Power Supplies1R6嘉泰姆
3-Cell and 4-Cell Li+ Battery-Powered Devices1R6嘉泰姆
Graphic Cards1R6嘉泰姆
Game Consoles1R6嘉泰姆
Telecommunications
1R6嘉泰姆

四.下载产品资料PDF文档 1R6嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持1R6嘉泰姆

 QQ截图20160419174301.jpg1R6嘉泰姆

五,产品封装图 (Package)1R6嘉泰姆


blob.pngblob.png1R6嘉泰姆

六.电路原理图1R6嘉泰姆


blob.png1R6嘉泰姆

七,功能概述1R6嘉泰姆


Input Capacitor Selection1R6嘉泰姆
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, select1R6嘉泰姆
the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage. The maximum RMS1R6嘉泰姆
current rating requirement is approximately IOUT/2, where IOUT is the load current. During power up, the input capaci-tors have to handle large amount of surge current. In low-duty notebook appliactions, ceramic capacitors are1R6嘉泰姆
remmended. The capacitors must be connected between the drain of high-side MOSFET and the source of low-1R6嘉泰姆
side MOSFET with very low-impeadance PCB layout. 1R6嘉泰姆
MOSFET Selection1R6嘉泰姆
The application for a notebook battery with a maximum volt-age of 24V, at least a minimum 30V MOSFETs should1R6嘉泰姆
be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:1R6嘉泰姆
· For the low-side MOSFET, before it is turned on, the body diode has been conducted. The low-side MOSFET1R6嘉泰姆
driver will not charge the miller capacitor of this MOSFET.1R6嘉泰姆
In the turning off process of the low-side MOSFET,the load current will shift to the body diode first. The1R6嘉泰姆
high dv/dt of the phase node voltage will charge the miller capacitor through the low-side MOSFET driver1R6嘉泰姆
sinking current path. This results in much less switching loss of the low-side MOSFETs. The duty1R6嘉泰姆
cycle is often very small in high battery voltage applications, and the low-side MOSFET will con-1R6嘉泰姆
duct most of the switching cycle; therefore, the less the RDS(ON) of the low-side MOSFET, the less the power1R6嘉泰姆
loss. The gate charge for this MOSFET is usually a secondary consideration. The high-side MOSFET1R6嘉泰姆
does not have this zero voltage switching condition, and because it conducts for less time1R6嘉泰姆
compared to the low-side MOSFET, the switching loss tends to be dominant. Priority should be given1R6嘉泰姆
to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.1R6嘉泰姆
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reversing transfer capacitance1R6嘉泰姆
(CRSS) and maximum output current requirement. The losses in the MOSFETs have two components: conduc-1R6嘉泰姆
tion loss and transition loss. For the high-side and low-side MOSFETs, the losses are approximately given by1R6嘉泰姆
the following equations:1R6嘉泰姆
Layout Consideration1R6嘉泰姆
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.1R6嘉泰姆
With power devices switching at higher frequency, the resulting current transient will cause voltage spike across1R6嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transition1R6嘉泰姆
of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,1R6嘉泰姆
current stops flowing in the MOSFET and is freewheeling by the lower MOSFET and parasitic diode. Any parasitic1R6嘉泰姆
inductance of the circuit generates a large voltage spike during the switching interval. In general, using short and1R6嘉泰姆
wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike. And1R6嘉泰姆
signal and power grounds are to be kept separating and finally combined to use the ground plane construction or1R6嘉泰姆

single point grounding. The best tie-point between the signal ground and the power ground is at the negative1R6嘉泰姆
side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are not1R6嘉泰姆
recommended. Below is a checklist for your layout:1R6嘉泰姆
Layout Consideration (Cont.)1R6嘉泰姆
Keep the switching nodes (UGATEx, LGATEx, BOOTx,and PHASEx) away from sensitive small signal nodes1R6嘉泰姆
(REF, ILIMx, and FBx) since these nodes are fast mov-ing signals. Therefore, keep traces to these nodes as1R6嘉泰姆
short as possible and there should be no other weak signal traces in parallel with theses traces on any layer.1R6嘉泰姆

Minimizing the impedance with wide layout plane be-tween the two pads reduces the voltage bounce of1R6嘉泰姆

CXSD621041R6嘉泰姆

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31R6嘉泰姆

13.21R6嘉泰姆

0.81R6嘉泰姆

5~121R6嘉泰姆

25001R6嘉泰姆

CXSD6296A|B|C|D1R6嘉泰姆

SOP8P1R6嘉泰姆

VM1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

251R6嘉泰姆

31R6嘉泰姆

13.21R6嘉泰姆

0.6|0.81R6嘉泰姆

5~121R6嘉泰姆

12001R6嘉泰姆

CXSD62971R6嘉泰姆

TDFN3x3-101R6嘉泰姆

VM1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

251R6嘉泰姆

41R6嘉泰姆

13.21R6嘉泰姆

0.81R6嘉泰姆

5~121R6嘉泰姆

20001R6嘉泰姆

CXSD62981R6嘉泰姆

TDFN3x3-101R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

251R6嘉泰姆

4.51R6嘉泰姆

251R6嘉泰姆

0.61R6嘉泰姆

5~121R6嘉泰姆

801R6嘉泰姆

CXSD6299|A1R6嘉泰姆

SOP-8P1R6嘉泰姆

VM1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

251R6嘉泰姆

4.51R6嘉泰姆

13.21R6嘉泰姆

0.81R6嘉泰姆

5~121R6嘉泰姆

160001R6嘉泰姆

CXSD621001R6嘉泰姆

TQFN3x3-101R6嘉泰姆

VM1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

251R6嘉泰姆

4.51R6嘉泰姆

13.21R6嘉泰姆

0.61R6嘉泰姆

5~121R6嘉泰姆

25001R6嘉泰姆

CXSD62101|L1R6嘉泰姆

TDFN3x3-101R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

301R6嘉泰姆

31R6嘉泰姆

251R6嘉泰姆

0.81R6嘉泰姆

5~121R6嘉泰姆

20001R6嘉泰姆

CXSD621021R6嘉泰姆

TQFN3x3-161R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

301R6嘉泰姆

1.81R6嘉泰姆

281R6嘉泰姆

0.61R6嘉泰姆

51R6嘉泰姆

6001R6嘉泰姆

CXSD62102A1R6嘉泰姆

TQFN 3x3 161R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

301R6嘉泰姆

1.81R6嘉泰姆

281R6嘉泰姆

0.61R6嘉泰姆

51R6嘉泰姆

6001R6嘉泰姆

CXSD621031R6嘉泰姆

QFN4x4-241R6嘉泰姆

VM1R6嘉泰姆

21R6嘉泰姆

11R6嘉泰姆

501R6嘉泰姆

4.51R6嘉泰姆

13.21R6嘉泰姆

0.61R6嘉泰姆

5~121R6嘉泰姆

50001R6嘉泰姆

CXSD621041R6嘉泰姆

TQFN4x4-241R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

21R6嘉泰姆

151R6嘉泰姆

61R6嘉泰姆

251R6嘉泰姆

21R6嘉泰姆

N1R6嘉泰姆

5501R6嘉泰姆

CXSD621051R6嘉泰姆

TQFN4x4-241R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

21R6嘉泰姆

151R6嘉泰姆

61R6嘉泰姆

251R6嘉泰姆

21R6嘉泰姆

N1R6嘉泰姆

5501R6嘉泰姆

CXSD62106|A1R6嘉泰姆

TQFN4x4-41R6嘉泰姆

TQFN3x3-201R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

21R6嘉泰姆

201R6嘉泰姆

31R6嘉泰姆

281R6嘉泰姆

0.751R6嘉泰姆

51R6嘉泰姆

8001R6嘉泰姆

CXSD621071R6嘉泰姆

TQFN3x3-161R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

201R6嘉泰姆

1.81R6嘉泰姆

281R6嘉泰姆

0.751R6嘉泰姆

51R6嘉泰姆

4001R6嘉泰姆

CXSD621081R6嘉泰姆

QFN3.5x3.5-141R6嘉泰姆

TQFN3x3-161R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

201R6嘉泰姆

1.81R6嘉泰姆

281R6嘉泰姆

0.751R6嘉泰姆

51R6嘉泰姆

4001R6嘉泰姆

CXSD621091R6嘉泰姆

TQFN3x3-161R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

21R6嘉泰姆

201R6嘉泰姆

1.81R6嘉泰姆

281R6嘉泰姆

0.751R6嘉泰姆

51R6嘉泰姆

4001R6嘉泰姆

CXSD621101R6嘉泰姆

QFN3x3-201R6嘉泰姆

TQFN3x3-161R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

21R6嘉泰姆

201R6嘉泰姆

31R6嘉泰姆

281R6嘉泰姆

1.8|1.5|0.51R6嘉泰姆

51R6嘉泰姆

7401R6嘉泰姆

CXSD621111R6嘉泰姆

TQFN4x4-241R6嘉泰姆

|QFN3x3-201R6嘉泰姆

CM1R6嘉泰姆

11R6嘉泰姆

21R6嘉泰姆

151R6嘉泰姆

51R6嘉泰姆

281R6嘉泰姆

0.51R6嘉泰姆

N1R6嘉泰姆

30001R6嘉泰姆

CXSD621121R6嘉泰姆

TDFN3x3-101R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

201R6嘉泰姆

1.81R6嘉泰姆

281R6嘉泰姆

0.51R6嘉泰姆

51R6嘉泰姆

2501R6嘉泰姆

CXSD62113|C1R6嘉泰姆

TQFN3x3-201R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

21R6嘉泰姆

151R6嘉泰姆

61R6嘉泰姆

251R6嘉泰姆

21R6嘉泰姆

N1R6嘉泰姆

5501R6嘉泰姆

CXSD62113E1R6嘉泰姆

TQFN 3x3 201R6嘉泰姆

COT1R6嘉泰姆

21R6嘉泰姆

21R6嘉泰姆

111R6嘉泰姆

61R6嘉泰姆

251R6嘉泰姆

21R6嘉泰姆

N1R6嘉泰姆

5501R6嘉泰姆

CXSD621141R6嘉泰姆

TQFN3x3-201R6嘉泰姆

COT1R6嘉泰姆

21R6嘉泰姆

21R6嘉泰姆

111R6嘉泰姆

5.51R6嘉泰姆

251R6嘉泰姆

21R6嘉泰姆

N1R6嘉泰姆

2801R6嘉泰姆

CXSD621151R6嘉泰姆

QFN4x4-241R6嘉泰姆

VM1R6嘉泰姆

21R6嘉泰姆

11R6嘉泰姆

601R6嘉泰姆

3.11R6嘉泰姆

13.21R6嘉泰姆

0.851R6嘉泰姆

121R6嘉泰姆

50001R6嘉泰姆

CXSD62116A|B|C1R6嘉泰姆

SOP-8P1R6嘉泰姆

VM1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

201R6嘉泰姆

2.91R6嘉泰姆

13.21R6嘉泰姆

0.81R6嘉泰姆

121R6嘉泰姆

160001R6嘉泰姆

CXSD621171R6嘉泰姆

SOP-201R6嘉泰姆

VM1R6嘉泰姆

21R6嘉泰姆

21R6嘉泰姆

301R6嘉泰姆

101R6嘉泰姆

13.21R6嘉泰姆

11R6嘉泰姆

121R6嘉泰姆

50001R6嘉泰姆

CXSD621181R6嘉泰姆

TDFN3x3-101R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

11R6嘉泰姆

251R6嘉泰姆

1.81R6嘉泰姆

281R6嘉泰姆

0.71R6嘉泰姆

51R6嘉泰姆

2501R6嘉泰姆

CXSD621191R6嘉泰姆

TQFN3x3-201R6嘉泰姆

COT1R6嘉泰姆

21R6嘉泰姆

11R6嘉泰姆

401R6嘉泰姆

1.81R6嘉泰姆

251R6嘉泰姆

REFIN Setting1R6嘉泰姆

51R6嘉泰姆

7001R6嘉泰姆

CXSD621201R6嘉泰姆

QFN 3x3 201R6嘉泰姆

TQFN 3x3 161R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

21R6嘉泰姆

201R6嘉泰姆

31R6嘉泰姆

281R6嘉泰姆

1.8|1.5 1.35|1.2 0.51R6嘉泰姆

51R6嘉泰姆

8001R6嘉泰姆

CXSD62121A1R6嘉泰姆

TQFN3x3 201R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

21R6嘉泰姆

151R6嘉泰姆

31R6嘉泰姆

281R6嘉泰姆

0.751R6嘉泰姆

51R6嘉泰姆

2201R6嘉泰姆

CXSD62121B1R6嘉泰姆

TQFN3x3 201R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

21R6嘉泰姆

151R6嘉泰姆

31R6嘉泰姆

281R6嘉泰姆

0.751R6嘉泰姆

51R6嘉泰姆

2201R6嘉泰姆

CXSD621211R6嘉泰姆

TQFN3x3-201R6嘉泰姆

COT1R6嘉泰姆

11R6嘉泰姆

21R6嘉泰姆

201R6嘉泰姆

31R6嘉泰姆

281R6嘉泰姆

0.751R6嘉泰姆

51R6嘉泰姆

1801R6嘉泰姆

 1R6嘉泰姆

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