CXCN5398A1265PR

The CXCN5398A1265PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible

The CXCN5398A1265PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy

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1.产品概述       2.产品特点     IbO嘉泰姆

3.应用范围       4.技术规格书下载(PDF文档)IbO嘉泰姆

5.产品封装       6.电路原理图  IbO嘉泰姆

7.相关产品IbO嘉泰姆

   产品概述 返回TOPIbO嘉泰姆


The CXCN5398A1265PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

   产品特点 返回TOPIbO嘉泰姆


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   应用范围 返回TOPIbO嘉泰姆


●Notebook PCs IbO嘉泰姆

●Cellular and portable phones IbO嘉泰姆

●On-board power supplies IbO嘉泰姆

●Li-ion battery systemsIbO嘉泰姆

   技术规格书(产品PDF) 返回TOP IbO嘉泰姆


     需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!IbO嘉泰姆

 QQ截图20160419174301.jpgIbO嘉泰姆

产品封装图 返回TOPIbO嘉泰姆


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电路原理图 返回TOPIbO嘉泰姆


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功率MOSFET  N沟道

产品名称IbO嘉泰姆

封装IbO嘉泰姆

RdsIbO嘉泰姆

(ON) (Ω) Vgs=2.5V MAXIbO嘉泰姆

RdsIbO嘉泰姆

(ON) (Ω) Vgs=4.5V IbO嘉泰姆

RdsIbO嘉泰姆

(ON) (Ω) Vgs=4.5V MAXIbO嘉泰姆

VgsoffIbO嘉泰姆

VIbO嘉泰姆

MINIbO嘉泰姆

VgsIbO嘉泰姆

off(V) MAXIbO嘉泰姆

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pFIbO嘉泰姆

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(V)IbO嘉泰姆

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(A)IbO嘉泰姆

驱动IbO嘉泰姆

电压IbO嘉泰姆

(V)IbO嘉泰姆

CXCN5397A11BOMRIbO嘉泰姆

SOT23IbO嘉泰姆

 

0.13IbO嘉泰姆

0.17IbO嘉泰姆

1IbO嘉泰姆

3IbO嘉泰姆

150IbO嘉泰姆

30IbO嘉泰姆

20IbO嘉泰姆

1IbO嘉泰姆

4.5IbO嘉泰姆

CXCN5397A12B2MRIbO嘉泰姆

SOT23IbO嘉泰姆

0.16IbO嘉泰姆

0.075IbO嘉泰姆

0.1IbO嘉泰姆

0.7IbO嘉泰姆

1.4IbO嘉泰姆

180IbO嘉泰姆

20IbO嘉泰姆

12IbO嘉泰姆

1IbO嘉泰姆

2.5IbO嘉泰姆

CXCN5397A13BOMRIbO嘉泰姆

SOT23IbO嘉泰姆

0.14IbO嘉泰姆

0.075IbO嘉泰姆

0.1IbO嘉泰姆

0.5IbO嘉泰姆

1.2IbO嘉泰姆

220IbO嘉泰姆

20IbO嘉泰姆

8IbO嘉泰姆

1IbO嘉泰姆

1.5IbO嘉泰姆

CXCN5398A11A1PRIbO嘉泰姆

SOT89IbO嘉泰姆

 

0.075IbO嘉泰姆

0.105IbO嘉泰姆

1IbO嘉泰姆

2.5IbO嘉泰姆

270IbO嘉泰姆

30IbO嘉泰姆

20IbO嘉泰姆

4IbO嘉泰姆

4.5IbO嘉泰姆

CXCN5398A1265PRIbO嘉泰姆

SOT89IbO嘉泰姆

0.095IbO嘉泰姆

0.042IbO嘉泰姆

0.055IbO嘉泰姆

0.7IbO嘉泰姆

1.4IbO嘉泰姆

320IbO嘉泰姆

20IbO嘉泰姆

12IbO嘉泰姆

4IbO嘉泰姆

2.5IbO嘉泰姆

CXCN5398A1355PRIbO嘉泰姆

SOT89IbO嘉泰姆

0.07IbO嘉泰姆

0.037IbO嘉泰姆

0.05IbO嘉泰姆

0.5IbO嘉泰姆

1.2IbO嘉泰姆

390IbO嘉泰姆

20IbO嘉泰姆

8IbO嘉泰姆

4IbO嘉泰姆

1.5IbO嘉泰姆

◀ 上一篇:The CXCN5398A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy

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下一篇▶:CXCN5398A1355PR Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage.