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CXCP5367BKR/BSR/BJR

CXCP5367BKR CXCP5367BSR CXCP5367BJR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

CXCP5367BKR CXCP5367BSR CXCP5367BJR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mini

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   产品概述 返回TOPFpU嘉泰姆

The CXCP5367BKR/BSR/BJR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

   产品特点 返回TOPFpU嘉泰姆

● RDS(ON)= 0.48Ω @VGS=-4.5V FpU嘉泰姆

● RDS(ON)= 0.67Ω @VGS=-2.5V FpU嘉泰姆

● RDS(ON)= 0.95Ω @VGS=-1.8V FpU嘉泰姆

● RDS(ON)= 2.20Ω @VGS=-1.5V FpU嘉泰姆

● Super high density cell design for extremely low RDS(ON) FpU嘉泰姆

● Exceptional on-resistance and maximum DC current capability FpU嘉泰姆

● Capable doing Cu wire bondingFpU嘉泰姆

   应用范围 返回TOPFpU嘉泰姆

● Power Management in Note book FpU嘉泰姆

● Portable Equipment FpU嘉泰姆

● Battery Powered SystemFpU嘉泰姆

   技术规格书（产品PDF) 返回TOP FpU嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！FpU嘉泰姆

 QQ截图20160419174301.jpgFpU嘉泰姆

产品封装图 返回TOPFpU嘉泰姆

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电路原理图 返回TOPFpU嘉泰姆

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沟道FpU嘉泰姆

VDSFpU嘉泰姆

VGSFpU嘉泰姆

VTHFpU嘉泰姆

IDFpU嘉泰姆

IDMFpU嘉泰姆

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(Max)FpU嘉泰姆

  

(Typ)FpU嘉泰姆

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(Max)FpU嘉泰姆

BSS84FpU嘉泰姆

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20VFpU嘉泰姆

-2.0VFpU嘉泰姆

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-8VFpU嘉泰姆

-1.0VFpU嘉泰姆

-8AFpU嘉泰姆

-28AFpU嘉泰姆

28mΩFpU嘉泰姆

DFN2*2-6FpU嘉泰姆

CX16P12DFpU嘉泰姆

P沟道FpU嘉泰姆

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-12VFpU嘉泰姆

-0.7VFpU嘉泰姆

-16AFpU嘉泰姆

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DNF2*2-6FpU嘉泰姆

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P沟道FpU嘉泰姆

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-0.65VFpU嘉泰姆

-3AFpU嘉泰姆

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65mΩFpU嘉泰姆

SOT23、SOT23-3L FpU嘉泰姆

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P沟道FpU嘉泰姆

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-12VFpU嘉泰姆

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SOT23FpU嘉泰姆

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P沟道FpU嘉泰姆

-20VFpU嘉泰姆

-6VFpU嘉泰姆

-0.45VFpU嘉泰姆

-0.8AFpU嘉泰姆

-1.6AFpU嘉泰姆

350mΩFpU嘉泰姆

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CXCP5367CFpU嘉泰姆

P沟道FpU嘉泰姆

-12VFpU嘉泰姆

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-0.7VFpU嘉泰姆

-2.8AFpU嘉泰姆

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85mΩFpU嘉泰姆

SOT23FpU嘉泰姆

CXCP5367DFpU嘉泰姆

P沟道FpU嘉泰姆

-20VFpU嘉泰姆

-6VFpU嘉泰姆

-0.45VFpU嘉泰姆

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SOT23FpU嘉泰姆

CXCP5367DRFpU嘉泰姆

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350mΩFpU嘉泰姆

DFN1006-3LFpU嘉泰姆

CXCP5367EFpU嘉泰姆

P沟道FpU嘉泰姆

-12VFpU嘉泰姆

-12VFpU嘉泰姆

-0.7VFpU嘉泰姆

-2AFpU嘉泰姆

-7AFpU嘉泰姆

95mΩFpU嘉泰姆

SOT23FpU嘉泰姆

CXCP5367KRFpU嘉泰姆

P沟道FpU嘉泰姆

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-0.65VFpU嘉泰姆

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-6AFpU嘉泰姆

65mΩFpU嘉泰姆

SOT-323FpU嘉泰姆

CXCP5368FpU嘉泰姆

P沟道FpU嘉泰姆

-20VFpU嘉泰姆

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-0.7VFpU嘉泰姆

-4.1AFpU嘉泰姆

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39mΩFpU嘉泰姆

SOT23FpU嘉泰姆

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40mΩFpU嘉泰姆

SOT23FpU嘉泰姆

CXCP5393FpU嘉泰姆

P沟道FpU嘉泰姆

-20VFpU嘉泰姆

-12VFpU嘉泰姆

-0.7VFpU嘉泰姆

-8AFpU嘉泰姆

-32AFpU嘉泰姆

39mΩFpU嘉泰姆

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CXCP5377FpU嘉泰姆

P沟道FpU嘉泰姆

-60VFpU嘉泰姆

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-3.0VFpU嘉泰姆

-1.8AFpU嘉泰姆

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SOT-23-3LFpU嘉泰姆

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50mΩFpU嘉泰姆

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-2.9VFpU嘉泰姆

-6.5AFpU嘉泰姆

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39mΩFpU嘉泰姆

SOP8FpU嘉泰姆

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P沟道FpU嘉泰姆

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-20VFpU嘉泰姆

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-9.1AFpU嘉泰姆

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15mΩFpU嘉泰姆

SOP8FpU嘉泰姆

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-30VFpU嘉泰姆

-20VFpU嘉泰姆

-1.7VFpU嘉泰姆

-9.1AFpU嘉泰姆

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17mΩFpU嘉泰姆

SOP8FpU嘉泰姆

CXCP5380FpU嘉泰姆

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-65AFpU嘉泰姆

11.5mΩFpU嘉泰姆

SOP8FpU嘉泰姆

CXCP5389FpU嘉泰姆

P沟道FpU嘉泰姆

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-2.6VFpU嘉泰姆

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SOP8FpU嘉泰姆

CXCP5387FpU嘉泰姆

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-17.5AFpU嘉泰姆

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7.5mΩFpU嘉泰姆

SOP8FpU嘉泰姆

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P沟道FpU嘉泰姆

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-2.0VFpU嘉泰姆

-7.5AFpU嘉泰姆

-40AFpU嘉泰姆

30mΩFpU嘉泰姆

SOP8FpU嘉泰姆

CXCP5391FpU嘉泰姆

双P沟道FpU嘉泰姆

-100VFpU嘉泰姆

-20VFpU嘉泰姆

-1.9VFpU嘉泰姆

-4.5AFpU嘉泰姆

-18AFpU嘉泰姆

85mΩFpU嘉泰姆

SOP8FpU嘉泰姆

CXCP5392FpU嘉泰姆

P沟道FpU嘉泰姆

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-8VFpU嘉泰姆

-0.69VFpU嘉泰姆

-3AFpU嘉泰姆

-12AFpU嘉泰姆

110mΩFpU嘉泰姆

DFN2*3-8FpU嘉泰姆

CXCP5378FpU嘉泰姆

P沟道FpU嘉泰姆

-30VFpU嘉泰姆

-20VFpU嘉泰姆

-1VFpU嘉泰姆

-5.0AFpU嘉泰姆

-30AFpU嘉泰姆

50mΩFpU嘉泰姆

SOT23-6LFpU嘉泰姆

CXCP5381FpU嘉泰姆

P沟道FpU嘉泰姆

-30VFpU嘉泰姆

-20VFpU嘉泰姆

-1.6VFpU嘉泰姆

-5.1AFpU嘉泰姆

-20AFpU嘉泰姆

48mΩFpU嘉泰姆

SOP8FpU嘉泰姆

CXCP5381BFpU嘉泰姆

P沟道FpU嘉泰姆

-20VFpU嘉泰姆

-10VFpU嘉泰姆

-0.7VFpU嘉泰姆

-5AFpU嘉泰姆

-20AFpU嘉泰姆

60mΩFpU嘉泰姆

SOP8FpU嘉泰姆

CXCP5379FpU嘉泰姆

P沟道FpU嘉泰姆

-20VFpU嘉泰姆

-12VFpU嘉泰姆

-0.8VFpU嘉泰姆

-7AFpU嘉泰姆

-40AFpU嘉泰姆

21mΩFpU嘉泰姆

SOP8FpU嘉泰姆

◀ 上一篇:CXCP5367B采用先进的沟道技术在低至-2.5V的栅极电压下提供优良的RDS（ON）低栅极充电和操作

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下一篇▶:CXCP5367C采用先进的沟道技术提供优良的RDS（ON）低栅极充电和低至-2.5V的栅极电压操作适合用作电池保护

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