CXSD62113|C双降压恒定开启时间同步的PWM控制器每个通道驱动双N通道mosfet

目录HIy嘉泰姆

1.产品概述         2.产品特点HIy嘉泰姆
3.应用范围       4.下载产品资料PDF文档 HIy嘉泰姆
5.产品封装图                     6.电路原理图             HIy嘉泰姆
7.功能概述       8.相关产品HIy嘉泰姆

一,产品概述(General Description) HIy嘉泰姆

The CXSD62113 CXSD62113A CXSD62113B CXSD62113C CXSD62113E integrates dual step-down, constant-on-time,synchronous PWM controllers (that drives dual N-channel MOSFETs for each channel) and two low drop-out regulators as well as various protections into a chip.The PWM controllers step down high voltage of a battery to generate low-voltage for NB applications. The output of PWM1 and PWM2 can be adjusted from 2V to 5.5V by setting a resistive voltage-divider from VOUTx to GND.HIy嘉泰姆

The linear regulators provide 5V and 3.3V output for standby power supply. The linear regulators provide up to 100mA output current. When the PWMx output voltage is higher than LDOx bypass threshold, the related LDOx regulator is shut off and its output is connected to VOUTx by internal switchover MOSFET. It can save power dissipation. The charge pump circuit with 270kHz clock driver uses VOUT1 as its power supply to generate ap-proximately 15V DC voltage.HIy嘉泰姆
The CXSD62113/A/B/C provides excellent transient response and accurate DC output voltage in either PFM or PWM Mode. In Pulse-Frequency Mode (PFM), theHIy嘉泰姆
CXSD62113/A/B/C provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. The Forced-PWM Mode works nearly atHIy嘉泰姆

constant frequency for low-noise requirements. The unique ultrasonic mode maintains the switching frequency above 25kHz, which eliminates noise inHIy嘉泰姆
audio application.HIy嘉泰姆
The CXSD62113/A/B/C is equipped with accurate sourc-ing and current-limit, output under-voltage output over-voltage protections, being perfect for NB applications. A 1.4ms (typ.) digital soft-start can reduce the start-up current. A soft-stop function actively discharges the output capacitors by the discharge device. The CXSD62113/A/B has individual enable controls for each PWM channels. Pulling both EN1/2 pin low shuts down the all of outputs unless LDO3 output. The LDO3 and LDO5 of CXSD62113A/C are always on standby power.HIy嘉泰姆
The CXSD62113/A/B/C is available in a TQFN3x3-20 package.HIy嘉泰姆
二.产品特点(Features)HIy嘉泰姆

Wide Input voltage Range from 6V to 25VHIy嘉泰姆
Provide 5 Independent Outputs with ±1.0% Accuracy Over-TemperatureHIy嘉泰姆
- PWM1 Controller with Adjustable (2V to 5.5V) Out-putHIy嘉泰姆
PWM2 Controller with Adjustable (2V to 5.5V) Out-putHIy嘉泰姆
100mA Low Dropout Regulator (LDO5) with Fixed 5V OutputHIy嘉泰姆
100mA Low Dropout Regulator (LDO3) with Fixed 3.3V OutputHIy嘉泰姆
270kHz Clock Signal for 15V Charge Pump (Used VOUT1 as Its Power Supply)HIy嘉泰姆
Excellent Line/Load Regulations about ±1.5% Over-Temperature RangeHIy嘉泰姆
Built in POR Control Scheme ImplementedHIy嘉泰姆
Constant On-Time Control Scheme with FrequencyHIy嘉泰姆
Compensation for PWM ModeHIy嘉泰姆
Selectable Switching Frequency in PWM ModeHIy嘉泰姆
Built-in Digital Soft-Start for PWM Outputs and Soft-HIy嘉泰姆
Stop for PWM Outputs and LDO OutputsHIy嘉泰姆
Integrated Bootstrap Forward P-CH MOSFETHIy嘉泰姆
High Efficiency over Light to Full Load Range (PWMs)HIy嘉泰姆
Built-in Power Good Indicators (PWMs)HIy嘉泰姆
Independent Enable Inputs (PWMs, LDO)HIy嘉泰姆
70% Under-Voltage and 125% Over-Voltage Protec-tions (PWM)HIy嘉泰姆
Adjustable Current-Limit Protection (PWMs)HIy嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)HIy嘉泰姆
Over-Temperature ProtectionHIy嘉泰姆
3mmx3mm Thin QFN-20 (TQFN3x3-20) packageHIy嘉泰姆
Lead Free and Green Device Available (RoHS Compliant)HIy嘉泰姆
三,应用范围 (Applications)HIy嘉泰姆

Notebook and Sub-Notebook ComputersHIy嘉泰姆
Portable DevicesHIy嘉泰姆
DDR1, DDR2, and DDR3 Power SuppliesHIy嘉泰姆
3-Cell and 4-Cell Li+ Battery-Powered DevicesHIy嘉泰姆
Graphic CardsHIy嘉泰姆
Game ConsolesHIy嘉泰姆
TelecommunicationsHIy嘉泰姆
四.下载产品资料PDF文档 HIy嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！HIy嘉泰姆

QQ截图20160419174301.jpg HIy嘉泰姆

五,产品封装图 (Package)HIy嘉泰姆

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六.电路原理图HIy嘉泰姆

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七,功能概述HIy嘉泰姆

Input Capacitor Selection
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, select the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage. The maximum RMS current rating requirement is approximately IOUT/2, where IOUT is the load current. During power up, the input capaci-tors have to handle large amount of surge current. In low-duty notebook appliactions, ceramic capacitors are remmended. The capacitors must be connected between the drain of high-side MOSFET and the source of low-side MOSFET with very low-impeadance PCB layout.
MOSFET Selection
The application for a notebook battery with a maximum volt-age of 24V, at least a minimum 30V MOSFETs should be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:
· For the low-side MOSFET, before it is turned on, the body diode has been conducted. The low-side MOSFET
driver will not charge the miller capacitor of this MOSFET.
In the turning off process of the low-side MOSFET,the load current will shift to the body diode first. The
high dv/dt of the phase node voltage will charge the miller capacitor through the low-side MOSFET driver
sinking current path. This results in much less switching loss of the low-side MOSFETs. The duty
cycle is often very small in high battery voltage applications, and the low-side MOSFET will con-
duct most of the switching cycle; therefore, the less the RDS(ON) of the low-side MOSFET, the less the power
loss. The gate charge for this MOSFET is usually a secondary consideration. The high-side MOSFET
does not have this zero voltage switching condition, and because it conducts for less time
compared to the low-side MOSFET, the switching loss tends to be dominant. Priority should be given
to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reversing transfer capacitance
Layout Consideration
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.
With power devices switching at higher frequency, the resulting current transient will cause voltage spike across the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transition of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,current stops flowing in the MOSFET and is freewheeling by the lower MOSFET and parasitic diode. Any parasitic inductance of the circuit generates a large voltage spike during the switching interval. In general, using short and wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike. And signal and power grounds are to be kept separating and finally combined to use the ground plane construction or single point grounding. The best tie-point between the signal ground and the power ground is at the negative side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are not recommended. Below is a checklist for your layout:
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CXSD6278HIy嘉泰姆	SOP-8HIy嘉泰姆	VMHIy嘉泰姆	1HIy嘉泰姆	1HIy嘉泰姆	10HIy嘉泰姆	3.3HIy嘉泰姆	5.5HIy嘉泰姆	0.8HIy嘉泰姆	5HIy嘉泰姆	2100HIy嘉泰姆
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