CXCN5397A12B2MR

The CXCN5397A12B2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

CXCN5397A12B2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy

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1.产品概述       2.产品特点     yCq嘉泰姆

3.应用范围       4.技术规格书下载(PDF文档)yCq嘉泰姆

5.产品封装       6.电路原理图  yCq嘉泰姆

7.相关产品yCq嘉泰姆

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The CXCN5397A12B2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

   产品特点 返回TOPyCq嘉泰姆


  blob.pngyCq嘉泰姆

   应用范围 返回TOPyCq嘉泰姆


●Notebook PCs yCq嘉泰姆

●Cellular and portable phones yCq嘉泰姆

●On-board power supplies yCq嘉泰姆

●Li-ion battery systemsyCq嘉泰姆

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     需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!yCq嘉泰姆

 QQ截图20160419174301.jpgyCq嘉泰姆

产品封装图 返回TOPyCq嘉泰姆


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电路原理图 返回TOPyCq嘉泰姆


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功率MOSFET  N沟道

产品名称yCq嘉泰姆

封装yCq嘉泰姆

RdsyCq嘉泰姆

(ON) (Ω) Vgs=2.5V MAXyCq嘉泰姆

RdsyCq嘉泰姆

(ON) (Ω) Vgs=4.5V yCq嘉泰姆

RdsyCq嘉泰姆

(ON) (Ω) Vgs=4.5V MAXyCq嘉泰姆

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CXCN5397A11BOMRyCq嘉泰姆

SOT23yCq嘉泰姆

 

0.13yCq嘉泰姆

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4.5yCq嘉泰姆

CXCN5397A12B2MRyCq嘉泰姆

SOT23yCq嘉泰姆

0.16yCq嘉泰姆

0.075yCq嘉泰姆

0.1yCq嘉泰姆

0.7yCq嘉泰姆

1.4yCq嘉泰姆

180yCq嘉泰姆

20yCq嘉泰姆

12yCq嘉泰姆

1yCq嘉泰姆

2.5yCq嘉泰姆

CXCN5397A13BOMRyCq嘉泰姆

SOT23yCq嘉泰姆

0.14yCq嘉泰姆

0.075yCq嘉泰姆

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0.075yCq嘉泰姆

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2.5yCq嘉泰姆

270yCq嘉泰姆

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SOT89yCq嘉泰姆

0.07yCq嘉泰姆

0.037yCq嘉泰姆

0.05yCq嘉泰姆

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1.2yCq嘉泰姆

390yCq嘉泰姆

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4yCq嘉泰姆

1.5yCq嘉泰姆

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