CXCN5397A13BOMR

The CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy

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1.产品概述       2.产品特点     oME嘉泰姆

3.应用范围       4.技术规格书下载(PDF文档)oME嘉泰姆

5.产品封装       6.电路原理图  oME嘉泰姆

7.相关产品oME嘉泰姆

   产品概述 返回TOPoME嘉泰姆


The CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

   产品特点 返回TOPoME嘉泰姆


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   应用范围 返回TOPoME嘉泰姆


●Notebook PCs oME嘉泰姆

●Cellular and portable phones oME嘉泰姆

●On-board power supplies oME嘉泰姆

●Li-ion battery systemsoME嘉泰姆

   技术规格书(产品PDF) 返回TOP oME嘉泰姆


     需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!oME嘉泰姆

 QQ截图20160419174301.jpgoME嘉泰姆

产品封装图 返回TOPoME嘉泰姆


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电路原理图 返回TOPoME嘉泰姆


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功率MOSFET  N沟道

产品名称oME嘉泰姆

封装oME嘉泰姆

RdsoME嘉泰姆

(ON) (Ω) Vgs=2.5V MAXoME嘉泰姆

RdsoME嘉泰姆

(ON) (Ω) Vgs=4.5V oME嘉泰姆

RdsoME嘉泰姆

(ON) (Ω) Vgs=4.5V MAXoME嘉泰姆

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off(V) MAXoME嘉泰姆

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CXCN5397A11BOMRoME嘉泰姆

SOT23oME嘉泰姆

 

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0.17oME嘉泰姆

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150oME嘉泰姆

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CXCN5397A12B2MRoME嘉泰姆

SOT23oME嘉泰姆

0.16oME嘉泰姆

0.075oME嘉泰姆

0.1oME嘉泰姆

0.7oME嘉泰姆

1.4oME嘉泰姆

180oME嘉泰姆

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12oME嘉泰姆

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CXCN5397A13BOMRoME嘉泰姆

SOT23oME嘉泰姆

0.14oME嘉泰姆

0.075oME嘉泰姆

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270oME嘉泰姆

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CXCN5398A1265PRoME嘉泰姆

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0.095oME嘉泰姆

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320oME嘉泰姆

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CXCN5398A1355PRoME嘉泰姆

SOT89oME嘉泰姆

0.07oME嘉泰姆

0.037oME嘉泰姆

0.05oME嘉泰姆

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1.2oME嘉泰姆

390oME嘉泰姆

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