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CXMS5146

CXMS5146是双N通道增强MOS场效应晶体管，不需要连接电路板上的漏极，因为MOSFET1和MOSFET2的漏极是内部连接的。采用先进的沟道技术和设计，以低栅极电荷提供优秀的RSS（ON）。本装置是为锂离子电池保护电路而设计的。CXMS5146在DFN2X2-4L包中提供。标准产品CXMS5146不含铅和卤素
沟槽技术
超高密度电池设计
对更高直流电流具有优异的导通电阻
极低阈值电压

CXMS5146采用先进的沟道技术和设计以低栅极电荷提供优秀的RSS（ON）是为锂离子电池保护电路而设计双N通道增强MOS场效应晶体管MOSFET1和MOSFET2的漏极是内部连接的沟槽技术超高密度电池设计极低阈值电压

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   产品概述 返回TOPJpC嘉泰姆

The CXMS5146 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protection circuit. The CXMS5146 is available in DFN2X2-4L package. Standard Product CXMS5146 is Pb-free and Halogen-free

   产品特点 返回TOPJpC嘉泰姆

 Trench Technology JpC嘉泰姆

 Supper high density cell design JpC嘉泰姆

 Excellent ON resistance for higher DC current JpC嘉泰姆

 Extremely Low Threshold Voltage JpC嘉泰姆

 Small package DFN2X2-4LJpC嘉泰姆

   应用范围 返回TOPJpC嘉泰姆

 Lithium-Ion battery protection circuitJpC嘉泰姆

   技术规格书（产品PDF) 返回TOP JpC嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！JpC嘉泰姆

 QQ截图20160419174301.jpgJpC嘉泰姆

产品封装图 返回TOPJpC嘉泰姆

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电路原理图 返回TOPJpC嘉泰姆

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场效应晶体管 N沟道MOS管
Product Polarity Channel VDS VGS VGS(th) RDS(ON)@VGS=4.5V ID@TA=25oC Package Size
(Max.) (Max.) (Max.) (Typ.) (MAX.)
(V) (V) (V) (Ω) (A) (mm)(L×W)
CX380N60T N 1 600 ±30 4.5 0.36 10.6 TO-220 22 x 10
CX380N60TF N 1 600 ±30 4.5 0.36 10.6 TO-220F 29 x 10
CX380N60TG N 1 600 ±30 4.5 0.36 10.6 TO-252E-2 10 x 6.6
CX470N60T N 1 600 ±30 4.5 0.42 9.4 TO-220 22 x 10
CX470N60TF N 1 600 ±30 4.5 0.42 9.4 TO-220F 29 x 10
CX650N60T N 1 600 ±30 4.5 0.55 7.3 TO-220 22 x 10
CX650N60TF N 1 600 ±30 4.5 0.55 7.3 TO-220F 29 x 10
CX650N60TG N 1 600 ±30 4.5 0.55 7.3 TO-252E-2 10 x 6.6
CX650N60TN N 1 600 ±30 4.5 0.55 7.3 TO-251(IPAK) 15.4 x 6.6
CX01N10 N 1 100 ±20 2.5 0.255 1.7 SOT-23 2.9 x 2.4
CX01N11 N 1 110 ±20 2.5 0.25 1.8 SOT-23-6L 2.9 x 2.8
CX07N60 N 1 600 ±30 5 1 7 TO-220 22 x 10
CX07N60F N 1 600 ±30 5 1 7 TO-220F 29 x 10
CX07N65 N 1 650 ±30 5 1.05 7 TO-220 22 x 10
CX07N65F N 1 650 ±30 5 1 7 TO-220F 29 x 10
CX12N65 N 1 650 ±30 5 0.57 12 TO-220 22 x 10
CX12N65F N 1 650 ±30 5 0.57 12 TO-220F 29 x 10
CXMS5110 N 1 20 ±8 1 0.04 3.2 SOT-23 2.9 x 2.4
CXMS5111 N 1 20 ±6 0.85 0.22 0.9 SOT-23 2.9 x 2.4
CXMS5112 N 1 20 ±6 0.85 0.22 0.89 SOT-323 2.1 x 2.3
CXMS5113 N 1 20 ±8 1 0.027 3.9 SOT-23 2.9 x 2.4
CXMS5114 N 1 20 ±6 1 0.21 0.95 SOT-723 1.2 x 1.2
CXMS5115 N 1 20 ±5 0.85 0.22 0.71 DFN1006-3L 1.0 x 0.6
CXMS5115B N 1 20 ±5 0.85 0.22 0.71 DFN1006-3L 1.0 x 0.6
CXMS5116 N 1 20 ±5 0.85 0.22 0.66 DFN1006-3L 1.0 x 0.6
CXMS5117 N 1 20 ±10 1 0.42 0.54 SOT-723 1.2 x 1.2
CXMS5118 N 1 30 ±20 3 0.043 4 SOT-23 2.9 x 2.4
CXMS5119 N 1 30 ±20 2 0.057 3.1 SOT-23 2.9 x 2.4
CXMS5120 N 1 30 ±20 3 0.039 5.7 SOT-23-6L 2.9 x 2.8
CXMS5121 N 1 30 ±20 1.5 1.3 0.25 SOT-723 1.2 x 1.2
CXMS5122 N 1 30 20 2 0.025 5.7 DFN2020-6L 2.0 x 2.0
CXMS5123 N 1 30 ±20 1.5 1.3 0.25 SOT-323 2.1 x 2.3
CXMS5124 N 1 30 ±20 1.5 1.3 0.25 SOT-523 1.6 x 1.6
CXMS5125 N 1 20 ±6 1 0.41 0.8 SOT-523 1.6 x 1.6
CXMS5126 N 1 20 ±6 1 1.65 0.6 SOT-523 1.6 x 1.6
CXMS5127 N 1 45 ±20 1.5 0.142 1.7 SOT-23 2.9 x 2.4
CXMS5128 N 1 20 ±6 1 0.22 0.88 SOT-523 1.6 x 1.6
CXMS5129 N 1 60 ±20 2 1.7 0.5 SOT-23 2.9 x 2.4
CXMS5130 N 1 60 ±20 2 1.7 0.3 SOT-323 2.1 x 2.3
CXMS5131 N 2 20 ±12 1 0.42 0.56 SOT-363 2.1 x 2.3
CXMS5132 Dual N 2 20 ±6 0.85 0.22 0.89 SOT-363 2.1 x 2.3
CXMS5133 Dual N 2 20 ±6 0.85 0.22 0.88 SOT-563 1.6 x 1.6
CXMS5134 Dual N 2 20 ±10 1 0.0148 7 TSSOP-8L 3 x 6.4
CXMS5135 Dual N 2 20 ±10 1 0.0157 6.3 SOT-23-6L 2.9 x 2.8
CXMS5136 Dual N 2 20 ±10 1 0.016 4.8 PDFN2.9x2.8-8L 2.9 x 2.8
CXMS5137 Dual N 2 60 ±20 2 1.7 0.32 SOT-363 2.1 x 2.3
CXMS5138 Dual N 2 20 ±10 1 0.022 5 SOT-23-6L 2.9 x 2.8
CXMS5139 N 2 20 ±10 1 0.016 6.3 SOT-23-6 2.92 x 2.8
CXMS5140 Dual N 2 20 ±10 1 0.022 5.1 TSSOP-8L 3 x 6.4
CXMS5141 Dual N 2 20 ±12 1 0.018 6 WLCSP-4L 1.47 x 1.47
CXMS5142 Dual N 2 20 ±10 1 0.015 7 TSSOP-8L 3 x 6.4
CXMS5143 Dual N 2 20 ±12 1 0.013 6 WLCSP-4L 1.47 x 1.47
CXMS5144 Dual N 2 12 ±10 1.2 0.0095 6 WLCSP-4L 1.47 x 1.47
CXMS5145 Dual N 2 20 ±10 1 0.055 2.6 SOT-23-6L 2.9 x 2.8
CXMS5146 Dual N 2 20 ±12 1 0.012 6 DFN2020-4L 2.0 x 2.0
CXMS5147 Dual N 2 20 ±10 1 0.0175 6.3 TSOT-23-6L 2.9 x 2.8
CXMS5148 N 2 20 ±10 1 0.0095 11 PDFN3x3-8L 2.9 x 2.8
CXMS5149 Dual N 2 30 ±20 2.2 0.033 6.8 SOP-8L 4.9 x 6.0
CXMS5150 Dual N 2 60 ±20 2 1.7 0.3 SOT-563 1.6 x 1.6

◀ 上一篇:CXMS5145 N沟道增强型MOS场效应晶体管采用先进的沟道技术和设计低栅极电荷提供优良的RDS（ON）适用于DC-DC转换电源开关和充电电路沟槽技术超高密度电池设计优良的电阻极低阈值电压

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下一篇▶:CXMS5147采用沟道技术和设计低栅极电荷提供优秀的RDS（ON）用于DC-DC转换电源开关和充电电路N沟道增强MOS场效应晶体管沟槽技术超高密度电池设计高直流电流的优良导通电阻极低阈值电压

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