CXMS5145

CXMS5145是一种N沟道增强型MOS场效应晶体管,采用先进的沟道技术和设计,以低栅极电荷提供优良的RDS(ON),适用于DC-DC转换、电源开关和充电电路沟槽技术超高密度电池设计优良的电阻极低阈值电压

CXMS5145 N沟道增强型MOS场效应晶体管采用先进的沟道技术和设计低栅极电荷提供优良的RDS(ON)适用于DC-DC转换电源开关和充电电路沟槽技术超高密度电池设计优良的电阻极低阈值电压

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                          目录FVE嘉泰姆

   1.产品概述      2.产品特点      3.应用范围     4.技术规格书下载(PDF文档)FVE嘉泰姆

   5.产品封装      6.电路原理图     7.相关产品FVE嘉泰姆

一.产品概述FVE嘉泰姆


     The CXMS5145 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitable for use in DC-DC conversion,power switch and charging circuit. Standard Product CXMS5145 is Pb-free. FVE嘉泰姆

二.产品特点FVE嘉泰姆


  Trench TechnologyFVE嘉泰姆

  Supper high density cell designFVE嘉泰姆

  Excellent ON resistanceFVE嘉泰姆

  Extremely Low Threshold VoltageFVE嘉泰姆

  Small package SOT-23-6LFVE嘉泰姆

三.应用范围FVE嘉泰姆


  Driver for Relay, Solenoid, Motor, LED etc.FVE嘉泰姆

  Power supply converters circuiFVE嘉泰姆

  Load/Power Switching for portable device    FVE嘉泰姆

四.技术规格书(产品PDF)FVE嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!FVE嘉泰姆

 QQ截图20160419174301.jpgFVE嘉泰姆

五.产品封装图FVE嘉泰姆


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六.电路原理图FVE嘉泰姆


 blob.png  FVE嘉泰姆

七.相关芯片选择指南      更多同类产品......FVE嘉泰姆


场效应晶体管 N沟道MOS管
Product Polarity Channel VDS VGS VGS(th) RDS(ON)@VGS=4.5V ID@TA=25oC Package Size
(Max.) (Max.) (Max.) (Typ.) (MAX.)
(V) (V) (V) (Ω) (A) (mm)(L×W)
CX380N60T N 1 600 ±30 4.5 0.36 10.6 TO-220 22 x 10
CX380N60TF N 1 600 ±30 4.5 0.36 10.6 TO-220F 29 x 10
CX380N60TG N 1 600 ±30 4.5 0.36 10.6 TO-252E-2 10 x 6.6
CX470N60T N 1 600 ±30 4.5 0.42 9.4 TO-220 22 x 10
CX470N60TF N 1 600 ±30 4.5 0.42 9.4 TO-220F 29 x 10
CX650N60T N 1 600 ±30 4.5 0.55 7.3 TO-220 22 x 10
CX650N60TF N 1 600 ±30 4.5 0.55 7.3 TO-220F 29 x 10
CX650N60TG N 1 600 ±30 4.5 0.55 7.3 TO-252E-2 10 x 6.6
CX650N60TN N 1 600 ±30 4.5 0.55 7.3 TO-251(IPAK) 15.4 x 6.6
CX01N10 N 1 100 ±20 2.5 0.255 1.7 SOT-23 2.9 x 2.4
CX01N11 N 1 110 ±20 2.5 0.25 1.8 SOT-23-6L 2.9 x 2.8
CX07N60 N 1 600 ±30 5 1 7 TO-220 22 x 10
CX07N60F N 1 600 ±30 5 1 7 TO-220F 29 x 10
CX07N65 N 1 650 ±30 5 1.05 7 TO-220 22 x 10
CX07N65F N 1 650 ±30 5 1 7 TO-220F 29 x 10
CX12N65 N 1 650 ±30 5 0.57 12 TO-220 22 x 10
CX12N65F N 1 650 ±30 5 0.57 12 TO-220F 29 x 10
CXMS5110 N 1 20 ±8 1 0.04 3.2 SOT-23 2.9 x 2.4
CXMS5111 N 1 20 ±6 0.85 0.22 0.9 SOT-23 2.9 x 2.4
CXMS5112 N 1 20 ±6 0.85 0.22 0.89 SOT-323 2.1 x 2.3
CXMS5113 N 1 20 ±8 1 0.027 3.9 SOT-23 2.9 x 2.4
CXMS5114 N 1 20 ±6 1 0.21 0.95 SOT-723 1.2 x 1.2
CXMS5115 N 1 20 ±5 0.85 0.22 0.71 DFN1006-3L 1.0 x 0.6
CXMS5115B N 1 20 ±5 0.85 0.22 0.71 DFN1006-3L 1.0 x 0.6
CXMS5116 N 1 20 ±5 0.85 0.22 0.66 DFN1006-3L 1.0 x 0.6
CXMS5117 N 1 20 ±10 1 0.42 0.54 SOT-723 1.2 x 1.2
CXMS5118 N 1 30 ±20 3 0.043 4 SOT-23 2.9 x 2.4
CXMS5119 N 1 30 ±20 2 0.057 3.1 SOT-23 2.9 x 2.4
CXMS5120 N 1 30 ±20 3 0.039 5.7 SOT-23-6L 2.9 x 2.8
CXMS5121 N 1 30 ±20 1.5 1.3 0.25 SOT-723 1.2 x 1.2
CXMS5122 N 1 30 20 2 0.025 5.7 DFN2020-6L 2.0 x 2.0
CXMS5123 N 1 30 ±20 1.5 1.3 0.25 SOT-323 2.1 x 2.3
CXMS5124 N 1 30 ±20 1.5 1.3 0.25 SOT-523 1.6 x 1.6
CXMS5125 N 1 20 ±6 1 0.41 0.8 SOT-523 1.6 x 1.6
CXMS5126 N 1 20 ±6 1 1.65 0.6 SOT-523 1.6 x 1.6
CXMS5127 N 1 45 ±20 1.5 0.142 1.7 SOT-23 2.9 x 2.4
CXMS5128 N 1 20 ±6 1 0.22 0.88 SOT-523 1.6 x 1.6
CXMS5129 N 1 60 ±20 2 1.7 0.5 SOT-23 2.9 x 2.4
CXMS5130 N 1 60 ±20 2 1.7 0.3 SOT-323 2.1 x 2.3
CXMS5131 N 2 20 ±12 1 0.42 0.56 SOT-363 2.1 x 2.3
CXMS5132 Dual N 2 20 ±6 0.85 0.22 0.89 SOT-363 2.1 x 2.3
CXMS5133 Dual N 2 20 ±6 0.85 0.22 0.88 SOT-563 1.6 x 1.6
CXMS5134 Dual N 2 20 ±10 1 0.0148 7 TSSOP-8L 3 x 6.4
CXMS5135 Dual N 2 20 ±10 1 0.0157 6.3 SOT-23-6L 2.9 x 2.8
CXMS5136 Dual N 2 20 ±10 1 0.016 4.8 PDFN2.9x2.8-8L 2.9 x 2.8
CXMS5137 Dual N 2 60 ±20 2 1.7 0.32 SOT-363 2.1 x 2.3
CXMS5138 Dual N 2 20 ±10 1 0.022 5 SOT-23-6L 2.9 x 2.8
CXMS5139 N 2 20 ±10 1 0.016 6.3 SOT-23-6 2.92 x 2.8
CXMS5140 Dual N 2 20 ±10 1 0.022 5.1 TSSOP-8L 3 x 6.4
CXMS5141 Dual N 2 20 ±12 1 0.018 6 WLCSP-4L 1.47 x 1.47
CXMS5142 Dual N 2 20 ±10 1 0.015 7 TSSOP-8L 3 x 6.4
CXMS5143 Dual N 2 20 ±12 1 0.013 6 WLCSP-4L 1.47 x 1.47
CXMS5144 Dual N 2 12 ±10 1.2 0.0095 6 WLCSP-4L 1.47 x 1.47
CXMS5145 Dual N 2 20 ±10 1 0.055 2.6 SOT-23-6L 2.9 x 2.8
CXMS5146 Dual N 2 20 ±12 1 0.012 6 DFN2020-4L 2.0 x 2.0
CXMS5147 Dual N 2 20 ±10 1 0.0175 6.3 TSOT-23-6L 2.9 x 2.8
CXMS5148 N 2 20 ±10 1 0.0095 11 PDFN3x3-8L 2.9 x 2.8
CXMS5149 Dual N 2 30 ±20 2.2 0.033 6.8 SOP-8L 4.9 x 6.0
CXMS5150 Dual N 2 60 ±20 2 1.7 0.3 SOT-563 1.6 x 1.6

◀ 上一篇:CXMS5144沟道技术和设计以低栅极电荷提供优秀的RSS(ON)为锂离子电池保护电路而设计的双N通道增强型MOS场效应晶体管沟槽技术超高密度电池设计极低阈值电压更高直流电流有导通电阻

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下一篇▶:CXMS5146采用先进的沟道技术和设计以低栅极电荷提供优秀的RSS(ON)是为锂离子电池保护电路而设计双N通道增强MOS场效应晶体管MOSFET1和MOSFET2的漏极是内部连接的沟槽技术超高密度电池设计极低阈值电压