CXMS5105

CXMS5105是用于DC-DC变换器或负载开关应用的N和P通道增强型场效应晶体管,采用先进的沟道技术和设计,以提供低栅极电荷的出色的RD(ON)。标准产品CXMS5105不含铅。
超高密度极低Rds电池设计(开)卓越的导通电阻和最大直流电流能力

CXMS5105用于DC-DC变换器或负载开关应用的N和P通道增强型场效应晶体管采用先进的沟道技术和设计提供低栅极电荷的出色的RD(ON)超高密度极低Rds电池设计卓越的导通电阻和最大直流电流能力

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   产品概述 返回TOPK9p嘉泰姆


The CXMS5105 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Standard Product CXMS5105 is Pb-free.

   产品特点 返回TOPK9p嘉泰姆


z Trench Technology K9p嘉泰姆

z Supper high density cell design for extremely low Rds(on) K9p嘉泰姆

z Exceptional ON resistance and maximum DC current capability K9p嘉泰姆

z Small package design with DFN2x2-6L.K9p嘉泰姆

   应用范围 返回TOPK9p嘉泰姆


z Driver: Relays, Solenoids, Lamps, Hammers K9p嘉泰姆

z Power supply converters circuit K9p嘉泰姆

z Load/Power Switching for potable deviceK9p嘉泰姆

   技术规格书(产品PDF) 返回TOP K9p嘉泰姆


     需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!K9p嘉泰姆

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场效应晶体管 >

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Polarity Channel VDS VGS VGS(th) RDS(ON)@VGS=4.5V ID@TA=25oC Package Size
(Max.) (Max.) (Max.) (Typ.) (MAX.) (L×W)
(V) (V) (V) (Ω) (A) (mm)
CXMS5105 N + P 2 20/-20 ±6/±8 0.85/-1.0 0.18/0.085 0.65/-3.1 DFN2020-6L 2.0 x 2.0
CXMS5106 N + P 2 20/-20 ±6 0.9/-0.9 0.23/0.52 0.8/-0.59 SOT-363 2.1 x 2.3
CXMS5107 N + P 2 20/-20 ±6 0.9/-0.9 0.18/0.45 0.79/-0.5 SOT-563 1.6 x 1.6
CXMS5108 N + P 2 20/-20 ±8 1/-1 0.033/0.085 4.4/-2.8 SOT-23-6L 2.9 x 2.8
CXMS5109 N + P 2 12/-12 ±8 1.2/-1.2 0.028/-0.057 5.1/-4.0 DFN2020-6L 2.0 x 2.0

◀ 上一篇:The CXPP5452CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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