The CXPP5452CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
N channel
VDS =60V, ID =6.3A
RDS(ON)<30mΩ @ VGS=10V
P channel
VDS =-60V, ID =-5A
RDS(ON)<80mΩ @ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
[ CXPP5452CS ]
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N channel
VDS =60V, ID =6.3A
RDS(ON)<30mΩ @ VGS=10V
P channel
VDS =-60V, ID =-5A
RDS(ON)<80mΩ @ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
应用范围 返回TOP
H-bridge
Inverters
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| MOSFET | ||||||||
| Part | N-Channel | P-Channel | Operating | Package | ||||
| number | VDS (V) | RDS(ON) (mΩ) VGS=10V | VGS(th)(V) | VDS (V) | RDS(ON) (mΩ) VGS=-10V | VGS(th)（V） | Temperature(℃) | |
| CXPP5449CS | 30 | 36 | 1.5 | -30 | 69 | -1.6 | -145 | SOT23-6L |
| CXPP5450CS | 30 | 20 | 1.6 | -30 | 28 | -1.9 | -145 | SOP-8 |
| CXPP5451CS | 40 | 15.4 | 1.7 | -40 | 26 | -1.5 | -145 | SOP-8 |
| CXPP5452CS | 60 | 37 | 2 | -60 | 64 | -26 | -145 | SOP-8 |
下一篇▶:CXMS5105用于DC-DC变换器或负载开关应用的N和P通道增强型场效应晶体管采用先进的沟道技术和设计提供低栅极电荷的出色的RD（ON）超高密度极低Rds电池设计卓越的导通电阻和最大直流电流能力
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