CXMS5182

CXMS5182 CXMS5182A是P沟道增强MOS场效应晶体管。采用先进的沟槽技术和设计,以低栅极电荷提供优秀的RDS(ON)。该装置适用于DC-DC转换、电源开关和充电电路。标准产品CXMS5182 CXMS5182A不含铅。
沟槽技术
超高密度电池设计
优良的电阻
•极低阈值电压

CXMS5182 CXMS5182A沟槽技术超高密度极低阈值电压电池设计是P沟道增强MOS场效应晶体管采用先进的沟槽技术和设计低栅极电荷提供优秀的RDS(ON)适用于DC-DC转换电源开关和充电电路

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产品订购

产品简介

                          目录ANC嘉泰姆

   1.产品概述      2.产品特点      3.应用范围     4.技术规格书下载(PDF文档)ANC嘉泰姆

   5.产品封装      6.电路原理图     7.相关产品ANC嘉泰姆

一.产品概述ANC嘉泰姆


  The CXMS5182 CXMS5182A is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product CXMS5182 CXMS5182A is Pb-free.ANC嘉泰姆

二.产品特点ANC嘉泰姆


  Trench TechnologyANC嘉泰姆

  Supper high density cell designANC嘉泰姆

  Excellent ON resistanceANC嘉泰姆

  Extremely Low Threshold VoltageANC嘉泰姆

三.应用范围ANC嘉泰姆


  DC/DC convertersANC嘉泰姆

  Power supply converters circuitANC嘉泰姆

  Load/Power Switching for portable device    ANC嘉泰姆

四.技术规格书(产品PDF)ANC嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!ANC嘉泰姆

 QQ截图20160419174301.jpgANC嘉泰姆

五.产品封装图ANC嘉泰姆


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六.电路原理图ANC嘉泰姆


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七.相关芯片选择指南   更多同类产品.....ANC嘉泰姆


场效应晶体管 P沟道MOS管
Product Polarity Channel VDS VGS VGS(th) RDS(ON)@VGS=4.5V ID@TA=25oC Package Size
(Max.) (Max.) (Max.) (Typ.) (MAX.)
(V) (V) (V) (Ω) (A) (mm)(L×W)
CXMS5151 P 1 -20 ±8 -1 0.11 -1.4 SOT-323 2.1 x 2.3
CXMS5152 P 1 -12 ±12 -0.9 0.022 -5.1 DFN2020-6L 2.0 x 2.0
CXMS5153 P 1 -12 ±8 -0.9 0.031 -3.5 SOT-23 2.9 x 2.4
CXMS5154 P 1 -12 ±8 -1 0.015 -7.4 DFN2020-6L 2.0 x 2.0
CXMS5155 P 1 -12 ±8 -0.9 0.08 -1.5 SOT-323 2.1 x 2.3
CXMS5156 P+Diode 1 -20 ±8 -0.8 - -2.9 DFN3020-8L 3.0 x 2.0
CXMS5156B P+Diode 1 -20 ±8 -0.8 - -2.7 DFN3020-8L 3.0 x 2.0
CXMS5157 P+Diode 1 -20 ±8 -1 0.09 -3 DFN2020-6L 2.0 x 2.0
CXMS5158D P 1 -20 ±12 -1 0.042 -4 DFN3030-8L 3.0 x 3.0
CXMS5159 P 1 -20 ±8 -0.9 0.05 -4.1 DFN2020-6L 2.0 x 2.0
CXMS5160 P 1 -20 ±8 -0.8 0.081 -2.2 SOT-23 2.9 x 2.4
CXMS5161 P 1 -20 ±5 -0.9 0.48 -0.62 SOT-523 1.6 x 1.6
CXMS5162 P 1 -20 ±12 -1 0.056 -2.9 SOT-23 2.9 x 2.4
CXMS5163 P 1 -20 ±5 -0.8 0.495 -0.6 SOT-723 1.2 x 1.2
CXMS5164 P 1 -20 ±12 -1 0.047 -3.3 SOT-23-6L 2.9 x 2.8
CXMS5165 P 1 -20 ±12 -1 0.096 -2.2 SOT-23 2.9 x 2.4
CXMS5166 P 1 -20 ±5 -0.9 - -0.51 DFN1006-3L 1.0 x 0.6
CXMS5166B P 1 -20 ±5 -0.9 0.44 -0.51 DFN1006-3L 1.0 x 0.6
CXMS5167 P 1 -20 ±8 -1 0.017 -6.2 DFN2020-6L 2.0 x 2.0
CXMS5168 P 1 -20 ±12 -1 0.043 -4 SOT-23-3L 2.9 x 2.8
CXMS5169 P 1 -20 ±12 -1 0.043 -3.2 SOT-23 2.9 x 2.4
CXMS5170 P 1 -20 ±8 -1 0.081 -2.4 SOT-23 2.9 x 2.4
CXMS5171 P 1 -20 ±8 -1 0.052 -3.5 SOT-23-3L 2.9 x 2.8
CXMS5171A P 1 -20 ±12 -1 0.052 -3.5 SOT-23-3L 2.9 x 2.8
CXMS5172 P 1 -30 ±20 -2.5 0.079 -3.8 SOP-8L 4.9 x 6.0
CXMS5173 P 1 -30 ±20 -2.5 0.083 -4.1 SOT-23-3L 2.9 x 2.8
CXMS5174 P 1 -30 ±20 -2.5 0.08 -2.9 SOT-23 2.9 x 2.4
CXMS5175 P 1 -30 ±20 -2.5 0.077 -3.1 SOT-23 2.9 x 2.4
CXMS5176 P 1 -30 ±12 -1.5 0.043 -4.6 SOT-23-3L 2.9 x 2.8
CXMS5177 P 1 -30 ±20 -3 0.053 -3.7 SOT-23-3L 2.9 x 2.8
CXMS5178 Dual P 2 -30 ±12 -1.4 0.045 -5.6 SOP-8L 4.9 x 6.0
CXMS5179 Dual P 2 -30 ±20 -3 0.053 -5.5 SOP-8L 4.9 x 6.0
CXMS5180 P 1 -50 ±20 -2 3.5 -0.2 SOT-23 2.9 x 2.4
CXMS5181 P 1 -20 ±12 -1 0.025 -5.7 SOT-23-3 2.9 x 2.8
CXMS5182 P 1 -30 ±20 -3 0.053 -5.5 SOP-8L 4.9 x 6.0
CXMS5182A P 1 -30 ±20 -3 0.043 -5.4 SOP-8L 4.9 x 6.0
CXMS5183 Dual P 2 -20 ±8 -1 0.09 -3 DFN2020-6L 2.0 x 2.0
CXMS5184 Dual P 2 -20 ±12 -1 0.075 -3.1 DFN2020-6L 2.0 x 2.0
CXMS5185 Dual P 2 -20 ±12 -1 0.052 -3.7 DFN2020-6L 2.0 x 2.0
CXMS5186 Dual P 2 -20 ±6 -0.9 0.55 -0.56 SOT-563 1.6 x 1.6
CXMS5187 Dual P 2 -20 ±12 -2.5 0.07 -3.6 SOT-23-6L 2.9 x 2.8
CXMS5188 Dual P 2 -20 ±12 -2.5 0.07 -4.6 SOP-8L 4.9 x 6.0
CXMS5189 Dual P 2 -20 ±10 -1 0.08 -3.3 DFN2020-6L 2.0 x 2.0
CXMS5190 Dual P 2 -30 ±20 -2.5 0.07 -3.8 SOP-8L 4.9 x 6.0

◀ 上一篇:CXMS5181沟槽技术超高密度电池设计对更高直流电流具有优异的导通电阻极低阈值电压是P沟道增强MOS场效应晶体管采用沟槽技术和设计以低栅极电荷提供优秀的RDS(ON)适用于DC-DC转换电源开关和充电电路

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