CXMS5151

The CXMS5151 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product CXMS5151 is Pb-free

CXMS5151采用先进的沟槽技术和设计低栅极电荷提供优秀的无线电数据系统(ON)适用于DC-DC转换应用

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The CXMS5151 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product CXMS5151 is Pb-free.

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Li-Ion Battery Charging 7n9嘉泰姆

High Side DC-DC Conversion Circuits 7n9嘉泰姆

High Side Drive for Small Brushless DC Motors 7n9嘉泰姆

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场效应晶体管 P沟道MOS管
Product Polarity Channel VDS VGS VGS(th) RDS(ON)@VGS=4.5V ID@TA=25oC Package Size
(Max.) (Max.) (Max.) (Typ.) (MAX.)
(V) (V) (V) (Ω) (A) (mm)(L×W)
CXMS5151 P 1 -20 ±8 -1 0.11 -1.4 SOT-323 2.1 x 2.3
CXMS5152 P 1 -12 ±12 -0.9 0.022 -5.1 DFN2020-6L 2.0 x 2.0
CXMS5153 P 1 -12 ±8 -0.9 0.031 -3.5 SOT-23 2.9 x 2.4
CXMS5154 P 1 -12 ±8 -1 0.015 -7.4 DFN2020-6L 2.0 x 2.0
CXMS5155 P 1 -12 ±8 -0.9 0.08 -1.5 SOT-323 2.1 x 2.3
CXMS5156 P+Diode 1 -20 ±8 -0.8 - -2.9 DFN3020-8L 3.0 x 2.0
CXMS5156B P+Diode 1 -20 ±8 -0.8 - -2.7 DFN3020-8L 3.0 x 2.0
CXMS5157 P+Diode 1 -20 ±8 -1 0.09 -3 DFN2020-6L 2.0 x 2.0
CXMS5158D P 1 -20 ±12 -1 0.042 -4 DFN3030-8L 3.0 x 3.0
CXMS5159 P 1 -20 ±8 -0.9 0.05 -4.1 DFN2020-6L 2.0 x 2.0
CXMS5160 P 1 -20 ±8 -0.8 0.081 -2.2 SOT-23 2.9 x 2.4
CXMS5161 P 1 -20 ±5 -0.9 0.48 -0.62 SOT-523 1.6 x 1.6
CXMS5162 P 1 -20 ±12 -1 0.056 -2.9 SOT-23 2.9 x 2.4
CXMS5163 P 1 -20 ±5 -0.8 0.495 -0.6 SOT-723 1.2 x 1.2
CXMS5164 P 1 -20 ±12 -1 0.047 -3.3 SOT-23-6L 2.9 x 2.8
CXMS5165 P 1 -20 ±12 -1 0.096 -2.2 SOT-23 2.9 x 2.4
CXMS5166 P 1 -20 ±5 -0.9 - -0.51 DFN1006-3L 1.0 x 0.6
CXMS5166B P 1 -20 ±5 -0.9 0.44 -0.51 DFN1006-3L 1.0 x 0.6
CXMS5167 P 1 -20 ±8 -1 0.017 -6.2 DFN2020-6L 2.0 x 2.0
CXMS5168 P 1 -20 ±12 -1 0.043 -4 SOT-23-3L 2.9 x 2.8
CXMS5169 P 1 -20 ±12 -1 0.043 -3.2 SOT-23 2.9 x 2.4
CXMS5170 P 1 -20 ±8 -1 0.081 -2.4 SOT-23 2.9 x 2.4
CXMS5171 P 1 -20 ±8 -1 0.052 -3.5 SOT-23-3L 2.9 x 2.8
CXMS5171A P 1 -20 ±12 -1 0.052 -3.5 SOT-23-3L 2.9 x 2.8
CXMS5172 P 1 -30 ±20 -2.5 0.079 -3.8 SOP-8L 4.9 x 6.0
CXMS5173 P 1 -30 ±20 -2.5 0.083 -4.1 SOT-23-3L 2.9 x 2.8
CXMS5174 P 1 -30 ±20 -2.5 0.08 -2.9 SOT-23 2.9 x 2.4
CXMS5175 P 1 -30 ±20 -2.5 0.077 -3.1 SOT-23 2.9 x 2.4
CXMS5176 P 1 -30 ±12 -1.5 0.043 -4.6 SOT-23-3L 2.9 x 2.8
CXMS5177 P 1 -30 ±20 -3 0.053 -3.7 SOT-23-3L 2.9 x 2.8
CXMS5178 Dual P 2 -30 ±12 -1.4 0.045 -5.6 SOP-8L 4.9 x 6.0
CXMS5179 Dual P 2 -30 ±20 -3 0.053 -5.5 SOP-8L 4.9 x 6.0
CXMS5180 P 1 -50 ±20 -2 3.5 -0.2 SOT-23 2.9 x 2.4
CXMS5181 P 1 -20 ±12 -1 0.025 -5.7 SOT-23-3 2.9 x 2.8
CXMS5182 P 1 -30 ±20 -3 0.053 -5.5 SOP-8L 4.9 x 6.0
CXMS5182A P 1 -30 ±20 -3 0.043 -5.4 SOP-8L 4.9 x 6.0
CXMS5183 Dual P 2 -20 ±8 -1 0.09 -3 DFN2020-6L 2.0 x 2.0
CXMS5184 Dual P 2 -20 ±12 -1 0.075 -3.1 DFN2020-6L 2.0 x 2.0
CXMS5185 Dual P 2 -20 ±12 -1 0.052 -3.7 DFN2020-6L 2.0 x 2.0
CXMS5186 Dual P 2 -20 ±6 -0.9 0.55 -0.56 SOT-563 1.6 x 1.6
CXMS5187 Dual P 2 -20 ±12 -2.5 0.07 -3.6 SOT-23-6L 2.9 x 2.8
CXMS5188 Dual P 2 -20 ±12 -2.5 0.07 -4.6 SOP-8L 4.9 x 6.0
CXMS5189 Dual P 2 -20 ±10 -1 0.08 -3.3 DFN2020-6L 2.0 x 2.0
CXMS5190 Dual P 2 -30 ±20 -2.5 0.07 -3.8 SOP-8L 4.9 x 6.0

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下一篇▶:CXMS5152是P沟道增强MOS场效应晶体管采用先进的沟槽技术和设计以低栅极电荷提供优秀的RDS(ON)适用于DC-DC转换电源开关和充电电路高直流电流具有优异的导通电阻极低阈值电压