CXSD62104

CXSD62104集成了双降压、恒定时间、同步PWM控制器(为每个通道驱动双N通道mosfet)和
两个低损耗稳压器以及各种保护装置集成到一个芯片中。PWM控制器降低电池的高电压以产生NB的低电压应用。PWM1和PWM2的输出可以从2V调整到5.5V通过设置一个从VOUTx到GND的电阻分压器。线性调节器为备用电源提供5V和3.3V输出

CXSD62104双降压恒时同步的PWM控制器两个低损耗稳压器PWM1和PWM2的输出可以从2V调整到5.5V

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产品简介

目录YR3嘉泰姆

1.产品概述                       2.产品特点YR3嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 YR3嘉泰姆
5.产品封装图                     6.电路原理图                   YR3嘉泰姆
7.功能概述                        8.相关产品YR3嘉泰姆

一,产品概述(General Description)         YR3嘉泰姆

        The CXSD62104  integrates dual step-down, constant-ontime, synchronousYR3嘉泰姆

PWM controllers (that drives dual N-channel MOSFETs for each channel) andYR3嘉泰姆
two low drop-out regulators as well as various protections into a chip.The PWMYR3嘉泰姆
controllers step down high voltage of a battery to generate low-voltage for NBYR3嘉泰姆
applications. The output of PWM1 and PWM2 can be adjusted from 2V to 5.5VYR3嘉泰姆
by setting a resistive voltage-divider from VOUTx to GND.The linear regulatorsYR3嘉泰姆
provide 5V and 3.3V output for standby power supply. The linear regulatorsYR3嘉泰姆

provide up to 100mA output current. When the PWMx output voltage is higher YR3嘉泰姆

than LDOx bypass threshold, the related LDOx regulator is shut off and its YR3嘉泰姆

output is connected to VOUTx by internal switchover MOSFET. It can save power dissipation.YR3嘉泰姆
     The CXSD62104 provides excellent transient response and accurate DC YR3嘉泰姆

output voltage in either PFM or PWM Mode.In Pulse-Frequency Mode (PFM), YR3嘉泰姆

the CXSD62104 provides very high efficiency over light to heavy loads with YR3嘉泰姆

loading-modulated switching frequencies. The Forced-PWM mode works nearly YR3嘉泰姆

at constant frequency for low-noise requirements. The unique ultrasonic modeYR3嘉泰姆

 maintains the switching frequency above 25KHz, which eliminates noise in audio applications.YR3嘉泰姆

     The CXSD62104 is equipped with accurate sourcing cur-rent-limit, outputYR3嘉泰姆

under-voltage and output over-voltage protections, being perfect for NB YR3嘉泰姆

applications. A 1.7ms (typ.) digital soft-start can reduce the start-up current. YR3嘉泰姆

A soft-stop function actively discharges the output capaci-tors by the discharge YR3嘉泰姆

device. The CXSD62104 has individual enable controls for PWM channels and YR3嘉泰姆

LDOs. Pulling both ENPWM pin and ENLDO pin low shuts down the whole chipYR3嘉泰姆

with low quiescent current close to zero.YR3嘉泰姆
      The CXSD62104 is available in a TQFN4x4-24A package.YR3嘉泰姆
二.产品特点(Features)YR3嘉泰姆
Wide Input Voltage Range from 6V to 25VYR3嘉泰姆
Provide 4 Independent Outputs with ±1.5% Accu-YR3嘉泰姆
racy Over-TemperatureYR3嘉泰姆
- PWM1 Controller with Adjustable (2V to 5.5V) Out-putYR3嘉泰姆
PWM2 Controller with Adjustable (2V to 5.5V) Out-putYR3嘉泰姆
100mA Low Dropout Regulator (LDO5) with Fixed 5V OutputYR3嘉泰姆
100mA Low Dropout Regulator (LDO3) with Fixed 3.3V OutputYR3嘉泰姆
Excellent Line/Load Regulations about ±1.5% Over-Temperature RangeYR3嘉泰姆
±1%, (±1.5%, 50μA) 2.0V Reference Voltage OutputYR3嘉泰姆
Built-In POR Control Scheme ImplementedYR3嘉泰姆
Selectable Forced-PWM or Automatic PFM/PWMYR3嘉泰姆
(with Selectable Ultrasonic Operation)YR3嘉泰姆
Constant-On-Time Control Scheme with FrequencyYR3嘉泰姆
Compensation for PWM ModeYR3嘉泰姆
Selectable Switching Frequency in PWM ModeYR3嘉泰姆
Built-in Digital Soft-Start for PWM Outputs and Soft-YR3嘉泰姆
Stop for PWM Outputs and LDO OutputsYR3嘉泰姆
Integrated Bootstrap Forward P-CH MOSFETYR3嘉泰姆
High Efficiency over Light to Full Load Range (PWMs)YR3嘉泰姆
Built-in Power Good Indicators (PWMs)YR3嘉泰姆
Independent Enable Inputs (PWMs, LDO)YR3嘉泰姆

70% Under-Voltage and 125% Over-Voltage Protec-tions (PWM)YR3嘉泰姆

Adjustable Current-Limit Protection (PWMs)YR3嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)YR3嘉泰姆
Over-Temperature ProtectionYR3嘉泰姆
4mmx4mm Thin QFN-24 (TQFN4x4-24A) packageYR3嘉泰姆
Lead Free and Green Device Available (RoHS Compliant)
YR3嘉泰姆

三,应用范围 (Applications)YR3嘉泰姆

Notebook and Sub-Notebook ComputersYR3嘉泰姆

Portable DevicesYR3嘉泰姆
DDR1, DDR2, and DDR3 Power SuppliesYR3嘉泰姆
3-Cell and 4-Cell Li+ Battery-Powered DevicesYR3嘉泰姆
Graphic CardsYR3嘉泰姆
Game ConsolesYR3嘉泰姆
Telecommunications
YR3嘉泰姆

四.下载产品资料PDF文档 YR3嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持YR3嘉泰姆

 QQ截图20160419174301.jpgYR3嘉泰姆

五,产品封装图 (Package)YR3嘉泰姆


blob.pngblob.pngYR3嘉泰姆

六.电路原理图YR3嘉泰姆


blob.pngYR3嘉泰姆

七,功能概述YR3嘉泰姆


Input Capacitor SelectionYR3嘉泰姆
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, selectYR3嘉泰姆
the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage. The maximum RMSYR3嘉泰姆
current rating requirement is approximately IOUT/2, where IOUT is the load current. During power up, the input capaci-tors have to handle large amount of surge current. In low-duty notebook appliactions, ceramic capacitors areYR3嘉泰姆
remmended. The capacitors must be connected between the drain of high-side MOSFET and the source of low-YR3嘉泰姆
side MOSFET with very low-impeadance PCB layout. YR3嘉泰姆
MOSFET SelectionYR3嘉泰姆
The application for a notebook battery with a maximum volt-age of 24V, at least a minimum 30V MOSFETs shouldYR3嘉泰姆
be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:YR3嘉泰姆
· For the low-side MOSFET, before it is turned on, the body diode has been conducted. The low-side MOSFETYR3嘉泰姆
driver will not charge the miller capacitor of this MOSFET.YR3嘉泰姆
In the turning off process of the low-side MOSFET,the load current will shift to the body diode first. TheYR3嘉泰姆
high dv/dt of the phase node voltage will charge the miller capacitor through the low-side MOSFET driverYR3嘉泰姆
sinking current path. This results in much less switching loss of the low-side MOSFETs. The dutyYR3嘉泰姆
cycle is often very small in high battery voltage applications, and the low-side MOSFET will con-YR3嘉泰姆
duct most of the switching cycle; therefore, the less the RDS(ON) of the low-side MOSFET, the less the powerYR3嘉泰姆
loss. The gate charge for this MOSFET is usually a secondary consideration. The high-side MOSFETYR3嘉泰姆
does not have this zero voltage switching condition, and because it conducts for less timeYR3嘉泰姆
compared to the low-side MOSFET, the switching loss tends to be dominant. Priority should be givenYR3嘉泰姆
to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.YR3嘉泰姆
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reversing transfer capacitanceYR3嘉泰姆
(CRSS) and maximum output current requirement. The losses in the MOSFETs have two components: conduc-YR3嘉泰姆
tion loss and transition loss. For the high-side and low-side MOSFETs, the losses are approximately given byYR3嘉泰姆
the following equations:YR3嘉泰姆
Layout ConsiderationYR3嘉泰姆
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.YR3嘉泰姆
With power devices switching at higher frequency, the resulting current transient will cause voltage spike acrossYR3嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionYR3嘉泰姆
of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,YR3嘉泰姆
current stops flowing in the MOSFET and is freewheeling by the lower MOSFET and parasitic diode. Any parasiticYR3嘉泰姆
inductance of the circuit generates a large voltage spike during the switching interval. In general, using short andYR3嘉泰姆
wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike. AndYR3嘉泰姆
signal and power grounds are to be kept separating and finally combined to use the ground plane construction orYR3嘉泰姆

single point grounding. The best tie-point between the signal ground and the power ground is at the negativeYR3嘉泰姆
side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are notYR3嘉泰姆
recommended. Below is a checklist for your layout:YR3嘉泰姆
Layout Consideration (Cont.)YR3嘉泰姆
Keep the switching nodes (UGATEx, LGATEx, BOOTx,and PHASEx) away from sensitive small signal nodesYR3嘉泰姆
(REF, ILIMx, and FBx) since these nodes are fast mov-ing signals. Therefore, keep traces to these nodes asYR3嘉泰姆
short as possible and there should be no other weak signal traces in parallel with theses traces on any layer.YR3嘉泰姆

Minimizing the impedance with wide layout plane be-tween the two pads reduces the voltage bounce ofYR3嘉泰姆

CXSD62104YR3嘉泰姆

八,相关产品                 更多同类产品...... YR3嘉泰姆


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Part_No YR3嘉泰姆

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ArchiYR3嘉泰姆

tectuYR3嘉泰姆

PhaseYR3嘉泰姆

No.ofYR3嘉泰姆

PWMYR3嘉泰姆

OutputYR3嘉泰姆

Output YR3嘉泰姆

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(A) YR3嘉泰姆

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ReferenceYR3嘉泰姆

VoltageYR3嘉泰姆

(V) YR3嘉泰姆

Bias YR3嘉泰姆

VoltageYR3嘉泰姆

(V) YR3嘉泰姆

QuiescentYR3嘉泰姆

CurrentYR3嘉泰姆

(uA) YR3嘉泰姆

minYR3嘉泰姆

maxYR3嘉泰姆

CXSD6273YR3嘉泰姆

SOP-14YR3嘉泰姆

QSOP-16YR3嘉泰姆

QFN4x4-16YR3嘉泰姆

VM    YR3嘉泰姆

1   YR3嘉泰姆

1     YR3嘉泰姆

30YR3嘉泰姆

2.9    YR3嘉泰姆

13.2YR3嘉泰姆

0.9YR3嘉泰姆

12     YR3嘉泰姆

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1YR3嘉泰姆

1YR3嘉泰姆

20YR3嘉泰姆

2.9  YR3嘉泰姆

13.2 YR3嘉泰姆

0.8YR3嘉泰姆

12YR3嘉泰姆

5000YR3嘉泰姆

CXSD6274CYR3嘉泰姆

SOP-8YR3嘉泰姆

VMYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

20YR3嘉泰姆

2.9YR3嘉泰姆

13.2YR3嘉泰姆

0.8YR3嘉泰姆

12YR3嘉泰姆

5000YR3嘉泰姆

CXSD6275YR3嘉泰姆

QFN4x4-24YR3嘉泰姆

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1YR3嘉泰姆

1YR3嘉泰姆

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2.2YR3嘉泰姆

13.2YR3嘉泰姆

0.8YR3嘉泰姆

5~12YR3嘉泰姆

2100YR3嘉泰姆

CXSD6276AYR3嘉泰姆

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1YR3嘉泰姆

1YR3嘉泰姆

20YR3嘉泰姆

2.2YR3嘉泰姆

13.2YR3嘉泰姆

0.8YR3嘉泰姆

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2100YR3嘉泰姆

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5YR3嘉泰姆

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1.25|0.8YR3嘉泰姆

5~12YR3嘉泰姆

3000YR3嘉泰姆

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SOP-8YR3嘉泰姆

VMYR3嘉泰姆

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5YR3嘉泰姆

2100YR3嘉泰姆

CXSD6279BYR3嘉泰姆

SOP-14YR3嘉泰姆

VM   YR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

10YR3嘉泰姆

5YR3嘉泰姆

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0.8YR3嘉泰姆

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2YR3嘉泰姆

20YR3嘉泰姆

5YR3嘉泰姆

13.2YR3嘉泰姆

0.6YR3嘉泰姆

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SOP-14YR3嘉泰姆

VMYR3嘉泰姆

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12YR3嘉泰姆

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1YR3嘉泰姆

1YR3嘉泰姆

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13.2YR3嘉泰姆

1.2YR3嘉泰姆

12YR3嘉泰姆

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2YR3嘉泰姆

20YR3嘉泰姆

5YR3嘉泰姆

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13.2YR3嘉泰姆

0.6YR3嘉泰姆

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4000YR3嘉泰姆

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VMYR3嘉泰姆

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20YR3嘉泰姆

3YR3嘉泰姆

13.2YR3嘉泰姆

0.8YR3嘉泰姆

5~12YR3嘉泰姆

2500YR3嘉泰姆

CXSD6296A|B|C|DYR3嘉泰姆

SOP8PYR3嘉泰姆

VMYR3嘉泰姆

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25YR3嘉泰姆

3YR3嘉泰姆

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0.6|0.8YR3嘉泰姆

5~12YR3嘉泰姆

1200YR3嘉泰姆

CXSD6297YR3嘉泰姆

TDFN3x3-10YR3嘉泰姆

VMYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

25YR3嘉泰姆

4YR3嘉泰姆

13.2YR3嘉泰姆

0.8YR3嘉泰姆

5~12YR3嘉泰姆

2000YR3嘉泰姆

CXSD6298YR3嘉泰姆

TDFN3x3-10YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

25YR3嘉泰姆

4.5YR3嘉泰姆

25YR3嘉泰姆

0.6YR3嘉泰姆

5~12YR3嘉泰姆

80YR3嘉泰姆

CXSD6299|AYR3嘉泰姆

SOP-8PYR3嘉泰姆

VMYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

25YR3嘉泰姆

4.5YR3嘉泰姆

13.2YR3嘉泰姆

0.8YR3嘉泰姆

5~12YR3嘉泰姆

16000YR3嘉泰姆

CXSD62100YR3嘉泰姆

TQFN3x3-10YR3嘉泰姆

VMYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

25YR3嘉泰姆

4.5YR3嘉泰姆

13.2YR3嘉泰姆

0.6YR3嘉泰姆

5~12YR3嘉泰姆

2500YR3嘉泰姆

CXSD62101|LYR3嘉泰姆

TDFN3x3-10YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

30YR3嘉泰姆

3YR3嘉泰姆

25YR3嘉泰姆

0.8YR3嘉泰姆

5~12YR3嘉泰姆

2000YR3嘉泰姆

CXSD62102YR3嘉泰姆

TQFN3x3-16YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

30YR3嘉泰姆

1.8YR3嘉泰姆

28YR3嘉泰姆

0.6YR3嘉泰姆

5YR3嘉泰姆

600YR3嘉泰姆

CXSD62102AYR3嘉泰姆

TQFN 3x3 16YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

30YR3嘉泰姆

1.8YR3嘉泰姆

28YR3嘉泰姆

0.6YR3嘉泰姆

5YR3嘉泰姆

600YR3嘉泰姆

CXSD62103YR3嘉泰姆

QFN4x4-24YR3嘉泰姆

VMYR3嘉泰姆

2YR3嘉泰姆

1YR3嘉泰姆

50YR3嘉泰姆

4.5YR3嘉泰姆

13.2YR3嘉泰姆

0.6YR3嘉泰姆

5~12YR3嘉泰姆

5000YR3嘉泰姆

CXSD62104YR3嘉泰姆

TQFN4x4-24YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

2YR3嘉泰姆

15YR3嘉泰姆

6YR3嘉泰姆

25YR3嘉泰姆

2YR3嘉泰姆

NYR3嘉泰姆

550YR3嘉泰姆

CXSD62105YR3嘉泰姆

TQFN4x4-24YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

2YR3嘉泰姆

15YR3嘉泰姆

6YR3嘉泰姆

25YR3嘉泰姆

2YR3嘉泰姆

NYR3嘉泰姆

550YR3嘉泰姆

CXSD62106|AYR3嘉泰姆

TQFN4x4-4YR3嘉泰姆

TQFN3x3-20YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

2YR3嘉泰姆

20YR3嘉泰姆

3YR3嘉泰姆

28YR3嘉泰姆

0.75YR3嘉泰姆

5YR3嘉泰姆

800YR3嘉泰姆

CXSD62107YR3嘉泰姆

TQFN3x3-16YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

20YR3嘉泰姆

1.8YR3嘉泰姆

28YR3嘉泰姆

0.75YR3嘉泰姆

5YR3嘉泰姆

400YR3嘉泰姆

CXSD62108YR3嘉泰姆

QFN3.5x3.5-14YR3嘉泰姆

TQFN3x3-16YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

20YR3嘉泰姆

1.8YR3嘉泰姆

28YR3嘉泰姆

0.75YR3嘉泰姆

5YR3嘉泰姆

400YR3嘉泰姆

CXSD62109YR3嘉泰姆

TQFN3x3-16YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

2YR3嘉泰姆

20YR3嘉泰姆

1.8YR3嘉泰姆

28YR3嘉泰姆

0.75YR3嘉泰姆

5YR3嘉泰姆

400YR3嘉泰姆

CXSD62110YR3嘉泰姆

QFN3x3-20YR3嘉泰姆

TQFN3x3-16YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

2YR3嘉泰姆

20YR3嘉泰姆

3YR3嘉泰姆

28YR3嘉泰姆

1.8|1.5|0.5YR3嘉泰姆

5YR3嘉泰姆

740YR3嘉泰姆

CXSD62111YR3嘉泰姆

TQFN4x4-24YR3嘉泰姆

|QFN3x3-20YR3嘉泰姆

CMYR3嘉泰姆

1YR3嘉泰姆

2YR3嘉泰姆

15YR3嘉泰姆

5YR3嘉泰姆

28YR3嘉泰姆

0.5YR3嘉泰姆

NYR3嘉泰姆

3000YR3嘉泰姆

CXSD62112YR3嘉泰姆

TDFN3x3-10YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

20YR3嘉泰姆

1.8YR3嘉泰姆

28YR3嘉泰姆

0.5YR3嘉泰姆

5YR3嘉泰姆

250YR3嘉泰姆

CXSD62113|CYR3嘉泰姆

TQFN3x3-20YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

2YR3嘉泰姆

15YR3嘉泰姆

6YR3嘉泰姆

25YR3嘉泰姆

2YR3嘉泰姆

NYR3嘉泰姆

550YR3嘉泰姆

CXSD62113EYR3嘉泰姆

TQFN 3x3 20YR3嘉泰姆

COTYR3嘉泰姆

2YR3嘉泰姆

2YR3嘉泰姆

11YR3嘉泰姆

6YR3嘉泰姆

25YR3嘉泰姆

2YR3嘉泰姆

NYR3嘉泰姆

550YR3嘉泰姆

CXSD62114YR3嘉泰姆

TQFN3x3-20YR3嘉泰姆

COTYR3嘉泰姆

2YR3嘉泰姆

2YR3嘉泰姆

11YR3嘉泰姆

5.5YR3嘉泰姆

25YR3嘉泰姆

2YR3嘉泰姆

NYR3嘉泰姆

280YR3嘉泰姆

CXSD62115YR3嘉泰姆

QFN4x4-24YR3嘉泰姆

VMYR3嘉泰姆

2YR3嘉泰姆

1YR3嘉泰姆

60YR3嘉泰姆

3.1YR3嘉泰姆

13.2YR3嘉泰姆

0.85YR3嘉泰姆

12YR3嘉泰姆

5000YR3嘉泰姆

CXSD62116A|B|CYR3嘉泰姆

SOP-8PYR3嘉泰姆

VMYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

20YR3嘉泰姆

2.9YR3嘉泰姆

13.2YR3嘉泰姆

0.8YR3嘉泰姆

12YR3嘉泰姆

16000YR3嘉泰姆

CXSD62117YR3嘉泰姆

SOP-20YR3嘉泰姆

VMYR3嘉泰姆

2YR3嘉泰姆

2YR3嘉泰姆

30YR3嘉泰姆

10YR3嘉泰姆

13.2YR3嘉泰姆

1YR3嘉泰姆

12YR3嘉泰姆

5000YR3嘉泰姆

CXSD62118YR3嘉泰姆

TDFN3x3-10YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

1YR3嘉泰姆

25YR3嘉泰姆

1.8YR3嘉泰姆

28YR3嘉泰姆

0.7YR3嘉泰姆

5YR3嘉泰姆

250YR3嘉泰姆

CXSD62119YR3嘉泰姆

TQFN3x3-20YR3嘉泰姆

COTYR3嘉泰姆

2YR3嘉泰姆

1YR3嘉泰姆

40YR3嘉泰姆

1.8YR3嘉泰姆

25YR3嘉泰姆

REFIN SettingYR3嘉泰姆

5YR3嘉泰姆

700YR3嘉泰姆

CXSD62120YR3嘉泰姆

QFN 3x3 20YR3嘉泰姆

TQFN 3x3 16YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

2YR3嘉泰姆

20YR3嘉泰姆

3YR3嘉泰姆

28YR3嘉泰姆

1.8|1.5 1.35|1.2 0.5YR3嘉泰姆

5YR3嘉泰姆

800YR3嘉泰姆

CXSD62121AYR3嘉泰姆

TQFN3x3 20YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

2YR3嘉泰姆

15YR3嘉泰姆

3YR3嘉泰姆

28YR3嘉泰姆

0.75YR3嘉泰姆

5YR3嘉泰姆

220YR3嘉泰姆

CXSD62121BYR3嘉泰姆

TQFN3x3 20YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

2YR3嘉泰姆

15YR3嘉泰姆

3YR3嘉泰姆

28YR3嘉泰姆

0.75YR3嘉泰姆

5YR3嘉泰姆

220YR3嘉泰姆

CXSD62121YR3嘉泰姆

TQFN3x3-20YR3嘉泰姆

COTYR3嘉泰姆

1YR3嘉泰姆

2YR3嘉泰姆

20YR3嘉泰姆

3YR3嘉泰姆

28YR3嘉泰姆

0.75YR3嘉泰姆

5YR3嘉泰姆

180YR3嘉泰姆

 YR3嘉泰姆

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