CXSD62102

CXSD62102提供出色的瞬态响应和准确的直流电压以PFM或PWM模式输出。在脉冲频率模式(PFM)中,CXSD62102在轻到重负载的负载下提供非常高的效率-调制开关频率。在脉宽调制模式下,转换器几乎在用于低噪声要求的恒定频率

单相定时同步的PWM控制器CXSD62102驱动N通道mosfet瞬态响应和准确的直流电压以PFM或PWM模式输出

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产品简介

目录Ytn嘉泰姆

1.产品概述                       2.产品特点Ytn嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 Ytn嘉泰姆
5.产品封装图                     6.电路原理图                   Ytn嘉泰姆
7.功能概述                        8.相关产品Ytn嘉泰姆

一,产品概述(General Description)         Ytn嘉泰姆
            The CXSD62102 is a single-phase, constant on-time, synchronous PWMYtn嘉泰姆
controller, which drives N-channel MOSFETs. The CXSD62102 steps down highYtn嘉泰姆
voltage to generate low-voltage chipset or RAM supplies in notebook computers.Ytn嘉泰姆
The CXSD62102 provides excellent transient response and accurate DC voltageYtn嘉泰姆
output in either PFM or PWM Mode.In Pulse Frequency Mode (PFM), theCXSD62102 provides very high efficiency over light to heavy loads with loading-Ytn嘉泰姆
modulated switching frequencies. In PWM Mode, the converter works nearly atYtn嘉泰姆
constant frequency for low-noise requirements. CXSD62102 is built in remoteYtn嘉泰姆
sense function for applications that require remote sense.The CXSD62102 isYtn嘉泰姆
equipped with accurate positive current limit, output under-voltage, and outputYtn嘉泰姆
over-voltage protections, perfect for NB applications. The Power-On-ResetYtn嘉泰姆
function monitors the voltage on VCC to prevent wrong operation duringYtn嘉泰姆
power-on. The CXSD62102 has a 1ms digital soft start and built-in an integratedYtn嘉泰姆
output discharge device for soft stop. An internal integrated soft-start ramps upYtn嘉泰姆
the output voltage with programmable slew rate to reduce the start-up current.Ytn嘉泰姆
A soft-stop function actively discharges the output capacitors.Ytn嘉泰姆
       The CXSD62102 is available in 16pin TQFN3x3-16 package respectively.Ytn嘉泰姆
二.产品特点(Features)Ytn嘉泰姆
1.)Adjustable Output Voltage from +0.6V to +3.3VYtn嘉泰姆
      - 0.6V Reference VoltageYtn嘉泰姆
      - ±0.6% Accuracy Over-TemperatureYtn嘉泰姆
2.)Operates from An Input Battery Voltage Range of +1.8V to +28VYtn嘉泰姆
3.)Remote Feedback Sense for Excellent Output VoltageYtn嘉泰姆
4.)REFIN Function for Over-clocking Purpose from 0.5V~2.5V rangeYtn嘉泰姆
5.)Power-On-Reset Monitoring on VCC pinYtn嘉泰姆
6.)Excellent line and load transient responsesYtn嘉泰姆
7.)PFM mode for increased light load efficiencyYtn嘉泰姆
8.)Programmable PWM Frequency from 100kHz to 500kHzYtn嘉泰姆
9.)Selectable Forced PWM or automatic PFM/PWM modeYtn嘉泰姆
10.)Built in 30A Output current driving capabilityIntegrate MOSFET DriversYtn嘉泰姆
11.)Integrated Bootstrap Forward P-CH MOSFETYtn嘉泰姆
12.)Adjustable Integrated Soft-Start and Soft-Stop Power Good MonitoringYtn嘉泰姆
13.)70% Under-Voltage ProtectionYtn嘉泰姆
14.)125% Over-Voltage Protection TQFN3x3-16 PackageYtn嘉泰姆
15.)Lead Free and Green Devices AvailableYtn嘉泰姆
三,应用范围 (Applications)Ytn嘉泰姆
NotebookYtn嘉泰姆
Table PCYtn嘉泰姆
Hand-Held PortableYtn嘉泰姆
AIO PCYtn嘉泰姆
四.下载产品资料PDF文档 Ytn嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持Ytn嘉泰姆

 QQ截图20160419174301.jpgYtn嘉泰姆

五,产品封装图 (Package)Ytn嘉泰姆

blob.pngYtn嘉泰姆

六.电路原理图Ytn嘉泰姆


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blob.pngYtn嘉泰姆

七,功能概述Ytn嘉泰姆


Input Capacitor Selection (Cont.)Ytn嘉泰姆
higher than the maximum input voltage. The maximum RMS current rating requirement is approximately IOUT/2,where IOUT is the load current. During power-up, the input capacitors have to handle great amount of surge current.For low-duty notebook appliactions, ceramic capacitor is recommended. The capacitors must be connected be-tween the drain of high-side MOSFET and the source of low-side MOSFET with very low-impeadance PCB layout. Ytn嘉泰姆
MOSFET SelectionYtn嘉泰姆
The application for a notebook battery with a maximum voltage of 24V, at least a minimum 30V MOSFETs shouldYtn嘉泰姆
be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:For the low-side MOSFET, before it is turned on, the body diode has been conducting. The low-side MOSFET driver will not charge the miller capacitor of this MOSFET.Ytn嘉泰姆
In the turning off process of the low-side MOSFET, the load current will shift to the body diode first. The high dv/dt of the phase node voltage will charge the miller capaci-tor through the low-side MOSFET driver sinking current path. This results in much less switchingYtn嘉泰姆
loss of the low-side MOSFETs. The duty cycle is often very small in high battery voltage applications, and the low-side MOSFET will conduct most of the switching cycle; therefore, when using smaller RDS(ON) of the low-side MOSFET, the con-verter can reduce power loss. The gate charge for this MOSFET is usually the secondary consideration. The high-side MOSFET does not have this zero voltage switch-ing condition; in addition, it conducts for less time com-pared to the low-side MOSFET, so the switching loss tends to be dominant. Priority should be given to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.Ytn嘉泰姆
The selection of the N-channel power MOSFETs are determined by the R DS(ON), reversing transfer capaci-tance (CRSS) and maximum output current requirement.The losses in the MOSFETs have two components:Ytn嘉泰姆
conduction loss and transition loss. For the high-side and low-side MOSFETs, the losses are approximatelyYtn嘉泰姆
given by the following equations:Ytn嘉泰姆
Phigh-side = IOUT (1+ TC)(RDS(ON))D + (0.5)( IOUT)(VIN)( tSW)FSWYtn嘉泰姆
Plow-side = IOUT (1+ TC)(RDS(ON))(1-D) is the load current TC is the temperature dependency of RDS(ON)Ytn嘉泰姆
FSW is the switching frequency tSW is the switching interval D is the duty cycleNote that both MOSFETs have conduction losses while the high-side MOSFET includes an additional transition loss.The switching interval, tSW, is the function of the reverse transfer capacitance CRSS. The (1+TC) term is a factor in the temperature dependency of the RDS(ON) and can be extracted from the “RDS(ON) vs. Temperature” curve of the power MOSFET.Ytn嘉泰姆
Layout ConsiderationYtn嘉泰姆
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.Ytn嘉泰姆
With power devices switching at higher frequency, the resulting current transient will cause voltage spike acrossYtn嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionYtn嘉泰姆
of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,Ytn嘉泰姆
current stops flowing in the MOSFET and is freewheeling by the low side MOSFET and parasitic diode. Any parasiticYtn嘉泰姆
inductance of the circuit generates a large voltage spike during the switching interval. In general, using short andYtn嘉泰姆
wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike.Ytn嘉泰姆
Besides, signal and power grounds are to be kept sepa-rating and finally combined using ground plane construc-Ytn嘉泰姆
tion or single point grounding. The best tie-point between the signal ground and the power ground is at the nega-Ytn嘉泰姆
tive side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are notYtn嘉泰姆

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1Ytn嘉泰姆

1Ytn嘉泰姆

30Ytn嘉泰姆

1.8Ytn嘉泰姆

28Ytn嘉泰姆

0.6Ytn嘉泰姆

5Ytn嘉泰姆

600Ytn嘉泰姆

CXSD62102AYtn嘉泰姆

TQFN 3x3 16Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

1Ytn嘉泰姆

30Ytn嘉泰姆

1.8Ytn嘉泰姆

28Ytn嘉泰姆

0.6Ytn嘉泰姆

5Ytn嘉泰姆

600Ytn嘉泰姆

CXSD62103Ytn嘉泰姆

QFN4x4-24Ytn嘉泰姆

VMYtn嘉泰姆

2Ytn嘉泰姆

1Ytn嘉泰姆

50Ytn嘉泰姆

4.5Ytn嘉泰姆

13.2Ytn嘉泰姆

0.6Ytn嘉泰姆

5~12Ytn嘉泰姆

5000Ytn嘉泰姆

CXSD62104Ytn嘉泰姆

TQFN4x4-24Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

2Ytn嘉泰姆

15Ytn嘉泰姆

6Ytn嘉泰姆

25Ytn嘉泰姆

2Ytn嘉泰姆

NYtn嘉泰姆

550Ytn嘉泰姆

CXSD62105Ytn嘉泰姆

TQFN4x4-24Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

2Ytn嘉泰姆

15Ytn嘉泰姆

6Ytn嘉泰姆

25Ytn嘉泰姆

2Ytn嘉泰姆

NYtn嘉泰姆

550Ytn嘉泰姆

CXSD62106|AYtn嘉泰姆

TQFN4x4-4Ytn嘉泰姆

TQFN3x3-20Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

2Ytn嘉泰姆

20Ytn嘉泰姆

3Ytn嘉泰姆

28Ytn嘉泰姆

0.75Ytn嘉泰姆

5Ytn嘉泰姆

800Ytn嘉泰姆

CXSD62107Ytn嘉泰姆

TQFN3x3-16Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

1Ytn嘉泰姆

20Ytn嘉泰姆

1.8Ytn嘉泰姆

28Ytn嘉泰姆

0.75Ytn嘉泰姆

5Ytn嘉泰姆

400Ytn嘉泰姆

CXSD62108Ytn嘉泰姆

QFN3.5x3.5-14Ytn嘉泰姆

TQFN3x3-16Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

1Ytn嘉泰姆

20Ytn嘉泰姆

1.8Ytn嘉泰姆

28Ytn嘉泰姆

0.75Ytn嘉泰姆

5Ytn嘉泰姆

400Ytn嘉泰姆

CXSD62109Ytn嘉泰姆

TQFN3x3-16Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

2Ytn嘉泰姆

20Ytn嘉泰姆

1.8Ytn嘉泰姆

28Ytn嘉泰姆

0.75Ytn嘉泰姆

5Ytn嘉泰姆

400Ytn嘉泰姆

CXSD62110Ytn嘉泰姆

QFN3x3-20Ytn嘉泰姆

TQFN3x3-16Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

2Ytn嘉泰姆

20Ytn嘉泰姆

3Ytn嘉泰姆

28Ytn嘉泰姆

1.8|1.5|0.5Ytn嘉泰姆

5Ytn嘉泰姆

740Ytn嘉泰姆

CXSD62111Ytn嘉泰姆

TQFN4x4-24Ytn嘉泰姆

|QFN3x3-20Ytn嘉泰姆

CMYtn嘉泰姆

1Ytn嘉泰姆

2Ytn嘉泰姆

15Ytn嘉泰姆

5Ytn嘉泰姆

28Ytn嘉泰姆

0.5Ytn嘉泰姆

NYtn嘉泰姆

3000Ytn嘉泰姆

CXSD62112Ytn嘉泰姆

TDFN3x3-10Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

1Ytn嘉泰姆

20Ytn嘉泰姆

1.8Ytn嘉泰姆

28Ytn嘉泰姆

0.5Ytn嘉泰姆

5Ytn嘉泰姆

250Ytn嘉泰姆

CXSD62113|CYtn嘉泰姆

TQFN3x3-20Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

2Ytn嘉泰姆

15Ytn嘉泰姆

6Ytn嘉泰姆

25Ytn嘉泰姆

2Ytn嘉泰姆

NYtn嘉泰姆

550Ytn嘉泰姆

CXSD62113EYtn嘉泰姆

TQFN 3x3 20Ytn嘉泰姆

COTYtn嘉泰姆

2Ytn嘉泰姆

2Ytn嘉泰姆

11Ytn嘉泰姆

6Ytn嘉泰姆

25Ytn嘉泰姆

2Ytn嘉泰姆

NYtn嘉泰姆

550Ytn嘉泰姆

CXSD62114Ytn嘉泰姆

TQFN3x3-20Ytn嘉泰姆

COTYtn嘉泰姆

2Ytn嘉泰姆

2Ytn嘉泰姆

11Ytn嘉泰姆

5.5Ytn嘉泰姆

25Ytn嘉泰姆

2Ytn嘉泰姆

NYtn嘉泰姆

280Ytn嘉泰姆

CXSD62115Ytn嘉泰姆

QFN4x4-24Ytn嘉泰姆

VMYtn嘉泰姆

2Ytn嘉泰姆

1Ytn嘉泰姆

60Ytn嘉泰姆

3.1Ytn嘉泰姆

13.2Ytn嘉泰姆

0.85Ytn嘉泰姆

12Ytn嘉泰姆

5000Ytn嘉泰姆

CXSD62116A|B|CYtn嘉泰姆

SOP-8PYtn嘉泰姆

VMYtn嘉泰姆

1Ytn嘉泰姆

1Ytn嘉泰姆

20Ytn嘉泰姆

2.9Ytn嘉泰姆

13.2Ytn嘉泰姆

0.8Ytn嘉泰姆

12Ytn嘉泰姆

16000Ytn嘉泰姆

CXSD62117Ytn嘉泰姆

SOP-20Ytn嘉泰姆

VMYtn嘉泰姆

2Ytn嘉泰姆

2Ytn嘉泰姆

30Ytn嘉泰姆

10Ytn嘉泰姆

13.2Ytn嘉泰姆

1Ytn嘉泰姆

12Ytn嘉泰姆

5000Ytn嘉泰姆

CXSD62118Ytn嘉泰姆

TDFN3x3-10Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

1Ytn嘉泰姆

25Ytn嘉泰姆

1.8Ytn嘉泰姆

28Ytn嘉泰姆

0.7Ytn嘉泰姆

5Ytn嘉泰姆

250Ytn嘉泰姆

CXSD62119Ytn嘉泰姆

TQFN3x3-20Ytn嘉泰姆

COTYtn嘉泰姆

2Ytn嘉泰姆

1Ytn嘉泰姆

40Ytn嘉泰姆

1.8Ytn嘉泰姆

25Ytn嘉泰姆

REFIN SettingYtn嘉泰姆

5Ytn嘉泰姆

700Ytn嘉泰姆

CXSD62120Ytn嘉泰姆

QFN 3x3 20Ytn嘉泰姆

TQFN 3x3 16Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

2Ytn嘉泰姆

20Ytn嘉泰姆

3Ytn嘉泰姆

28Ytn嘉泰姆

1.8|1.5 1.35|1.2 0.5Ytn嘉泰姆

5Ytn嘉泰姆

800Ytn嘉泰姆

CXSD62121AYtn嘉泰姆

TQFN3x3 20Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

2Ytn嘉泰姆

15Ytn嘉泰姆

3Ytn嘉泰姆

28Ytn嘉泰姆

0.75Ytn嘉泰姆

5Ytn嘉泰姆

220Ytn嘉泰姆

CXSD62121BYtn嘉泰姆

TQFN3x3 20Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

2Ytn嘉泰姆

15Ytn嘉泰姆

3Ytn嘉泰姆

28Ytn嘉泰姆

0.75Ytn嘉泰姆

5Ytn嘉泰姆

220Ytn嘉泰姆

CXSD62121Ytn嘉泰姆

TQFN3x3-20Ytn嘉泰姆

COTYtn嘉泰姆

1Ytn嘉泰姆

2Ytn嘉泰姆

20Ytn嘉泰姆

3Ytn嘉泰姆

28Ytn嘉泰姆

0.75Ytn嘉泰姆

5Ytn嘉泰姆

180Ytn嘉泰姆

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