CXSD6282A

CXSD6282A电压模式,同步PWM控制器驱动双N通道mosfet。该装置将所有的控制、监控和保护功能集成到一个整体中,提供一个带欠压和过流保护的受控电源输出,输出负载变化提供了良好的调节,

CXSD6282A关闭和软启动功能电压型PWM控制设计欠压保护(UVP)过电流保护(OCP)

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产品简介

目录McG嘉泰姆

1.产品概述                       2.产品特点McG嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 McG嘉泰姆
5.产品封装图                     6.电路原理图                   McG嘉泰姆
7.功能概述                        8.相关产品McG嘉泰姆

一,产品概述(General Description)      McG嘉泰姆


 The CXSD6282 CXSD6282A is a voltage mode, synchronous PWM controller whichMcG嘉泰姆
drives dual N-channel MOSFETs. The device integrates all of the control, monitoring and protecting functions into a single package, provides one controlled power output with under-voltage and over-current protections.The CXSD6282 CXSD6282A provides excellent regulation for output load variation. The internal 0.6V temperature-compensated reference voltage is designed to meet the requirement of low output voltage applications. The device includes a 200kHz free-running triangle-wave oscillator that is adjustable from 50kHz to 1000kHz.McG嘉泰姆
 The CXSD6282 CXSD6282A has been equipped with excellent protec-tion functions: POR, OCP, and UVP. The Power-On-Re-set (POR) circuit can monitor the VCC, EN, and OCSET voltage to make sure the supply voltage exceeds their threshold voltage while the controller is running. The Over-Current Protection (OCP) monitors the output cur-rent by using the voltage drop across the upper MOSFET’s RDS(ON). When the output current reaches the trip point, the controller will run the soft-start function until the fault events are removed. The Under-Voltage Protection (UVP)monitors the voltage at FB pin (V FB) for short-circuit protection. When the VFB is less than 50% of VREF, the controller will shutdown the IC directly. McG嘉泰姆
二.产品特点(Features)McG嘉泰姆


1.)Single 12V Power Supply RequiredMcG嘉泰姆
2.)0.6V Reference with 1% AccuracyMcG嘉泰姆
3.)Shutdown and Soft-Start FunctionMcG嘉泰姆
4.)1.)Programmable Frequency Range from 50 kHz to 1000kHzMcG嘉泰姆
5.)Voltage Mode PWM Control DesignMcG嘉泰姆
6.)Up to 100% Duty CycleMcG嘉泰姆
7.)Under-Voltage Protection (UVP)McG嘉泰姆
8.)Over-Current Protection (OCP) SOP-14 PackageMcG嘉泰姆
9.)Lead Free and Green Devices Available (RoHS Compliant)McG嘉泰姆
三,应用范围 (Applications)McG嘉泰姆


   Graphic CardsMcG嘉泰姆
四.下载产品资料PDF文档 McG嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持McG嘉泰姆

 QQ截图20160419174301.jpgMcG嘉泰姆

 McG嘉泰姆

五,产品封装图 (Package)McG嘉泰姆


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六.电路原理图
blob.pngMcG嘉泰姆
七,功能概述
Layout ConsiderationMcG嘉泰姆
 In any high switching frequency converter, a correct layout is important to ensure proper operationMcG嘉泰姆
of the regulator.With power devices switching at 300kHz,the resulting cur-rent transient will causeMcG嘉泰姆
voltage spike across the i n t e r c o n n e c t i n g impedance and parasitic circuit elements. As anMcG嘉泰姆
example, consider the turn-off transition of the PWM MOSFET. Before turn-off, the MOSFET isMcG嘉泰姆
carrying the full load current. During turn-off, current stops flowing in the MOSFET and isMcG嘉泰姆
free-wheeling by the lower MOSFET and parasitic diode. Any parasitic inductance of the circuitMcG嘉泰姆
generates a large voltage spike during the switching interval. In general, using short andMcG嘉泰姆
wide printed circuit traces should minimize interconnect-ing impedances and the magnitudeMcG嘉泰姆
of voltage spike.And signal and power grounds are to be kept separating till combined usingMcG嘉泰姆
the ground plane construction or single point grounding. Figure 10 illustrates the layout,McG嘉泰姆
with bold lines indicating high current paths; these traces must be short and wide. ComponentsMcG嘉泰姆
along the bold lines should be placed lose together. Below is a checklist for your layout:McG嘉泰姆
- Keep the switching nodes (UGATE, LGATE, and PHASE) away from sensitive small signal nodesMcG嘉泰姆
since these nodes are fast moving signals. Therefore,keep traces to these nodes as short as possible.McG嘉泰姆
- The traces from the gate drivers to the MOSFETs (UGATE, LGATE) should be short and wide.McG嘉泰姆
- Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible.McG嘉泰姆
Minimizing the impedance with wide layout plane between the two pads reduces the voltage bounce ofMcG嘉泰姆
the node.McG嘉泰姆
- Decoupling capacitor, compensation component, the resistor dividers, boot capacitors, and SS capacitorsMcG嘉泰姆
should be close their pins. (For example, place the decoupling ceramic capacitor near the drain of theMcG嘉泰姆
high-side MOSFET as close as possible. The bulk capacitors are also placed near the drain).McG嘉泰姆
- The input capacitor should be near the drain of the upper MOSFET; the output capacitor should be nearMcG嘉泰姆
the loads. The input capacitor GND should be close to the output capacitor GND and the lower MOSFETMcG嘉泰姆
GND.McG嘉泰姆
- The drain of the MOSFETs (VIN and PHASE nodes)should be a large plane for heat sinking.

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28McG嘉泰姆

0.75McG嘉泰姆

5McG嘉泰姆

800McG嘉泰姆

CXSD62107McG嘉泰姆

TQFN3x3-16McG嘉泰姆

COTMcG嘉泰姆

1McG嘉泰姆

1McG嘉泰姆

20McG嘉泰姆

1.8McG嘉泰姆

28McG嘉泰姆

0.75McG嘉泰姆

5McG嘉泰姆

400McG嘉泰姆

CXSD62108McG嘉泰姆

QFN3.5x3.5-14McG嘉泰姆

TQFN3x3-16McG嘉泰姆

COTMcG嘉泰姆

1McG嘉泰姆

1McG嘉泰姆

20McG嘉泰姆

1.8McG嘉泰姆

28McG嘉泰姆

0.75McG嘉泰姆

5McG嘉泰姆

400McG嘉泰姆

CXSD62109McG嘉泰姆

TQFN3x3-16McG嘉泰姆

COTMcG嘉泰姆

1McG嘉泰姆

2McG嘉泰姆

20McG嘉泰姆

1.8McG嘉泰姆

28McG嘉泰姆

0.75McG嘉泰姆

5McG嘉泰姆

400McG嘉泰姆

CXSD62110McG嘉泰姆

QFN3x3-20McG嘉泰姆

TQFN3x3-16McG嘉泰姆

COTMcG嘉泰姆

1McG嘉泰姆

2McG嘉泰姆

20McG嘉泰姆

3McG嘉泰姆

28McG嘉泰姆

1.8|1.5|0.5McG嘉泰姆

5McG嘉泰姆

740McG嘉泰姆

CXSD62111McG嘉泰姆

TQFN4x4-24McG嘉泰姆

|QFN3x3-20McG嘉泰姆

CMMcG嘉泰姆

1McG嘉泰姆

2McG嘉泰姆

15McG嘉泰姆

5McG嘉泰姆

28McG嘉泰姆

0.5McG嘉泰姆

NMcG嘉泰姆

3000McG嘉泰姆

CXSD62112McG嘉泰姆

TDFN3x3-10McG嘉泰姆

COTMcG嘉泰姆

1McG嘉泰姆

1McG嘉泰姆

20McG嘉泰姆

1.8McG嘉泰姆

28McG嘉泰姆

0.5McG嘉泰姆

5McG嘉泰姆

250McG嘉泰姆

CXSD62113|CMcG嘉泰姆

TQFN3x3-20McG嘉泰姆

COTMcG嘉泰姆

1McG嘉泰姆

2McG嘉泰姆

15McG嘉泰姆

6McG嘉泰姆

25McG嘉泰姆

2McG嘉泰姆

NMcG嘉泰姆

550McG嘉泰姆

CXSD62113EMcG嘉泰姆

TQFN 3x3 20McG嘉泰姆

COTMcG嘉泰姆

2McG嘉泰姆

2McG嘉泰姆

11McG嘉泰姆

6McG嘉泰姆

25McG嘉泰姆

2McG嘉泰姆

NMcG嘉泰姆

550McG嘉泰姆

CXSD62114McG嘉泰姆

TQFN3x3-20McG嘉泰姆

COTMcG嘉泰姆

2McG嘉泰姆

2McG嘉泰姆

11McG嘉泰姆

5.5McG嘉泰姆

25McG嘉泰姆

2McG嘉泰姆

NMcG嘉泰姆

280McG嘉泰姆

CXSD62115McG嘉泰姆

QFN4x4-24McG嘉泰姆

VMMcG嘉泰姆

2McG嘉泰姆

1McG嘉泰姆

60McG嘉泰姆

3.1McG嘉泰姆

13.2McG嘉泰姆

0.85McG嘉泰姆

12McG嘉泰姆

5000McG嘉泰姆

CXSD62116A|B|CMcG嘉泰姆

SOP-8PMcG嘉泰姆

VMMcG嘉泰姆

1McG嘉泰姆

1McG嘉泰姆

20McG嘉泰姆

2.9McG嘉泰姆

13.2McG嘉泰姆

0.8McG嘉泰姆

12McG嘉泰姆

16000McG嘉泰姆

CXSD62117McG嘉泰姆

SOP-20McG嘉泰姆

VMMcG嘉泰姆

2McG嘉泰姆

2McG嘉泰姆

30McG嘉泰姆

10McG嘉泰姆

13.2McG嘉泰姆

1McG嘉泰姆

12McG嘉泰姆

5000McG嘉泰姆

CXSD62118McG嘉泰姆

TDFN3x3-10McG嘉泰姆

COTMcG嘉泰姆

1McG嘉泰姆

1McG嘉泰姆

25McG嘉泰姆

1.8McG嘉泰姆

28McG嘉泰姆

0.7McG嘉泰姆

5McG嘉泰姆

250McG嘉泰姆

CXSD62119McG嘉泰姆

TQFN3x3-20McG嘉泰姆

COTMcG嘉泰姆

2McG嘉泰姆

1McG嘉泰姆

40McG嘉泰姆

1.8McG嘉泰姆

25McG嘉泰姆

REFIN SettingMcG嘉泰姆

5McG嘉泰姆

700McG嘉泰姆

CXSD62120McG嘉泰姆

QFN 3x3 20McG嘉泰姆

TQFN 3x3 16McG嘉泰姆

COTMcG嘉泰姆

1McG嘉泰姆

2McG嘉泰姆

20McG嘉泰姆

3McG嘉泰姆

28McG嘉泰姆

1.8|1.5 1.35|1.2 0.5McG嘉泰姆

5McG嘉泰姆

800McG嘉泰姆

CXSD62121AMcG嘉泰姆

TQFN3x3 20McG嘉泰姆

COTMcG嘉泰姆

1McG嘉泰姆

2McG嘉泰姆

15McG嘉泰姆

3McG嘉泰姆

28McG嘉泰姆

0.75McG嘉泰姆

5McG嘉泰姆

220McG嘉泰姆

CXSD62121BMcG嘉泰姆

TQFN3x3 20McG嘉泰姆

COTMcG嘉泰姆

1McG嘉泰姆

2McG嘉泰姆

15McG嘉泰姆

3McG嘉泰姆

28McG嘉泰姆

0.75McG嘉泰姆

5McG嘉泰姆

220McG嘉泰姆

CXSD62121McG嘉泰姆

TQFN3x3-20McG嘉泰姆

COTMcG嘉泰姆

1McG嘉泰姆

2McG嘉泰姆

20McG嘉泰姆

3McG嘉泰姆

28McG嘉泰姆

0.75McG嘉泰姆

5McG嘉泰姆

180McG嘉泰姆

McG嘉泰姆
 McG嘉泰姆

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