CXES4274是便携式多媒体设备的音频点击和弹出消除器。从1.7伏工作到3伏。6V电源,CXES4274连接到现有系统放大器的输出,并在启动和关闭期间提供低阻抗接地路径。输入INL和INR接受电压从VDD波动到低于VDD的5.5V。有关更多信息,请参阅设置电源电压部分。上电和下电瞬态被分流到地面,以防止发出咔哒声和砰砰声。CXES4274具有两个由静音控制的低阻抗模拟开关,可打开和关闭开关。开关在正常工作时打开,对输出信号没有影响。在放大器的启动和关闭过程中,可以激活CXES4274,使输出对地短路,防止咔哒声和砰砰声通过耳机拉电流。
电源电压范围从1.7V到3.6V
·低静态电流1毫安
·通过设定销可调整关闭时间
·快速开启时间:100us(典型值)
·低开关电阻:0.3W
·无失真,点击和弹出消除
[ CXES4274 ]
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7.相关产品
产品概述 返回TOP
产品特点 返回TOP
· Wide supply voltage range from 1.7V to 3.6V
· Low quiescent current 1mA
· Adjustable turn off time by SET pin
· Fast turn on time : 100us(typ)
· Low switch resistance :0.3W
· Distortion-Free, Click-and-Pop Elimination
· Available in WLCSP1.42x0.92 - 6 Packages
· Lead Free Green Devices Available (RoHS Compliant)
应用范围 返回TOP
· Smart Phones
· Tablet PCs
· Portable Media Players
技术规格书(产品PDF) 返回TOP
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产品封装图 返回TOP
电路原理图 返回TOP
Products > Switch > Power Distribution Controller |
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Part_No |
Package |
No.of Channel |
External Power Switch Type |
Input Voltage (V) |
Quescint Current (uA) |
Wrong Input Voltage Protection |
Inpute Voltage UVLO |
SCP |
OCP (A) |
OVP |
UVP |
EN |
High/ Low EN |
POK |
|
min |
max |
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SOP8 TDFN2x2-8 |
1 |
N-Channel MOSFET |
10 |
26 |
750 |
Y |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
|
TDFN3x3-10 |
1 |
N-Channel MOSFET |
5 |
26 |
500 |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
||
TDFN3x3-10 |
1 |
N-channel MOSFET |
5 |
26 |
500 |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
Switch> Analog Switch |
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Part_No |
Package & Pins |
VDD Voltage (V) |
IDD, Supply Current (mA) |
Input Voltage (max)(V) |
Power Switch On Resistance(milohm) |
Turn-On Time(ms) |
Turn-Off Time(ms) |
|
min |
max |
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WLCSP1.2x1.2-9 |
2.9 |
5.5 |
35 |
0~5.5 |
0.2 |
5 |
1 |
|
WLCSP1.2x0.8-6 |
1.5 |
5.5 |
20 |
1.5-5.5 |
22 |
4.4 |
36.5 |
|
WLCSP 1.42x0.92-6 |
1.7 |
3.6 |
0.5 |
VDD-5.5~VDD |
0.2 |
0.1 |
1 |
Switch> DrMOS |
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Part_No |
Package |
Description |
Topology |
# of PWM Outputs |
Drive Lout (A) |
Vin (V) |
Fmax (Khz) |
R-Top (milohm) |
R-Sync (milohm) |
Iq (No load) (uA) |
En pin |
Sync Pin |
PSM/ CCM pin |
|
min |
max |
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TQFN4 x4-23P |
High-Performance, High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
8 |
4.5 |
25 |
1500 |
25 |
7 |
90 |
Y |
N |
Y |
|
TQFN4x4 -23P |
High-Performance, High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
6 |
4.5 |
25 |
1500 |
30 |
12 |
90 |
Y |
N |
Y |
|
TQFN5 x5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel |
MOSFET1 |
13 |
4.5 |
25 |
1500 |
9.7 |
5.2 |
90 |
Y |
N |
Y |
|
TQFN5 x5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
15 |
4.5 |
25 |
1500 |
8 |
4.5 |
90 |
Y |
N |
Y |
|
TQFN5 x5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
15 |
4.5 |
25 |
1500 |
8 |
4.5 |
90 |
Y |
N |
Y |
|