CXMS5224双N沟道增强型场效应晶体管采用高密度DMOS沟道技术制造用于减小通态电阻适合于低电压应用和低功耗。

产品简介

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

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z 20V/6A k6B嘉泰姆

RDS(ON) =18mΩ@ VGS=4.5V,ID=6A k6B嘉泰姆

RDS(ON) =19mΩ@ VGS=3.85V,ID=5A k6B嘉泰姆

z High Density Cell Design For Ultra Low On-Resistance k6B嘉泰姆

z Surface mount package：SOP8 z ESD Protected: 3000 Vk6B嘉泰姆

应用范围返回TOPk6B嘉泰姆

z Battery management k6B嘉泰姆

z power management k6B嘉泰姆

z Portable equipment k6B嘉泰姆

z Low power DC to DC converter. k6B嘉泰姆

z Load switch z LCD adapterk6B嘉泰姆

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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管)k6B嘉泰姆
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CXMS5213k6B嘉泰姆	N channelk6B嘉泰姆	20Vk6B嘉泰姆	12Vk6B嘉泰姆	5.2Ak6B嘉泰姆	37mΩk6B嘉泰姆	①②③④⑤⑥⑦⑧k6B嘉泰姆	SOT23k6B嘉泰姆
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Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protectionk6B嘉泰姆

CXMS5224

产品手册

产品简介

目录

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

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CXMS5224

产品手册

产品简介

目录

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

相关芯片选择指南 返回TOP 更多同类产品........

相关芯片选择指南返回TOP 更多同类产品........