CXMS5221双N沟道增强型场效应晶体管采用高密度DMOS沟道技术制造用于减小导通电阻适合于低压应用和低功耗20V/5A超低导通电阻高密度电池设计

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产品概述返回TOP

CXMS5221SG Series Dual N-channel enhancement mode field-effect transistor produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation

产品特点返回TOP

l 20V/5A， RDS(ON) =29mΩ@ VGS=3.85V,ID=5A

l High Density Cell Design For Ultra Low On-Resistance QmU嘉泰姆

l surface mount package：SOP8QmU嘉泰姆

应用范围返回TOP

l Battery management

l power management QmU嘉泰姆

l Portable equipment QmU嘉泰姆

l Low power DC to DC converter. QmU嘉泰姆

l Load switch QmU嘉泰姆

l LCD adapterQmU嘉泰姆

技术规格书（产品PDF) 返回TOP

要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！QmU嘉泰姆

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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管)QmU嘉泰姆
PartQmU嘉泰姆 NumberQmU嘉泰姆	ModeQmU嘉泰姆	VDS(Max)QmU嘉泰姆	VGSQmU嘉泰姆	ID(Max)QmU嘉泰姆	RDS(on)QmU嘉泰姆	ApplicationQmU嘉泰姆	PackageQmU嘉泰姆
PartQmU嘉泰姆 NumberQmU嘉泰姆	ModeQmU嘉泰姆	VDS(Max)QmU嘉泰姆	VGSQmU嘉泰姆	ID(Max)QmU嘉泰姆	RDS(on)QmU嘉泰姆	ApplicationQmU嘉泰姆	PackageQmU嘉泰姆
CXMS5213QmU嘉泰姆	N channelQmU嘉泰姆	20VQmU嘉泰姆	12VQmU嘉泰姆	5.2AQmU嘉泰姆	37mΩQmU嘉泰姆	①②③④⑤⑥⑦⑧QmU嘉泰姆	SOT23QmU嘉泰姆
CXMS5220QmU嘉泰姆	N channelQmU嘉泰姆	20VQmU嘉泰姆	8VQmU嘉泰姆	3AQmU嘉泰姆	22mΩQmU嘉泰姆	①②③④⑤⑥⑦⑧QmU嘉泰姆	SOT23/SOT23-3QmU嘉泰姆
CXMS5220-NQmU嘉泰姆	N channelQmU嘉泰姆	20VQmU嘉泰姆	12VQmU嘉泰姆	5.2AQmU嘉泰姆	29mΩQmU嘉泰姆	①②③④⑤⑥⑦⑧QmU嘉泰姆	SOT23QmU嘉泰姆
CXMS5221QmU嘉泰姆	Double NQmU嘉泰姆	20VQmU嘉泰姆	12VQmU嘉泰姆	6AQmU嘉泰姆	22mΩQmU嘉泰姆	①②③④⑤⑥⑦⑧QmU嘉泰姆	SOP8QmU嘉泰姆
CXMS5222QmU嘉泰姆	N channelQmU嘉泰姆	30VQmU嘉泰姆	12VQmU嘉泰姆	5.8AQmU嘉泰姆	25mΩQmU嘉泰姆	①②③④⑤⑥⑦⑧QmU嘉泰姆	SOT23/SOT23-3QmU嘉泰姆
CXMS5222-NQmU嘉泰姆	N channelQmU嘉泰姆	30VQmU嘉泰姆	20VQmU嘉泰姆	4.4AQmU嘉泰姆	35mΩQmU嘉泰姆	①②③④⑤⑥⑦⑧QmU嘉泰姆	SOT23QmU嘉泰姆
CXMS5223QmU嘉泰姆	Double NQmU嘉泰姆	20VQmU嘉泰姆	12VQmU嘉泰姆	6AQmU嘉泰姆	21mΩQmU嘉泰姆	①②③④⑤QmU嘉泰姆	SOT23-6/ TSSOP8QmU嘉泰姆
CXMS5224QmU嘉泰姆	Double NQmU嘉泰姆	20VQmU嘉泰姆	12VQmU嘉泰姆	5AQmU嘉泰姆	19mΩQmU嘉泰姆	①②③④⑤⑥⑦⑧QmU嘉泰姆	TSSOP8/SOT26QmU嘉泰姆
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery ProtectionQmU嘉泰姆

CXMS5221

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产品简介

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产品概述返回TOP

CXMS5221SG Series Dual N-channel enhancement mode field-effect transistor produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation

产品特点返回TOP

l 20V/5A， RDS(ON) =29mΩ@ VGS=3.85V,ID=5A

应用范围返回TOP

l Battery management

产品封装图返回TOP

电路原理图返回TOP

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CXMS5221

产品手册

产品简介

目录

产品概述 返回TOP

CXMS5221SG Series Dual N-channel enhancement mode field-effect transistor produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation

产品特点 返回TOP

l 20V/5A， RDS(ON) =29mΩ@ VGS=3.85V,ID=5A

应用范围 返回TOP

l Battery management

产品封装图 返回TOP

电路原理图 返回TOP

相关芯片选择指南 返回TOP 更多同类产品........

产品概述返回TOP

产品特点返回TOP

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