CXMS5221双N沟道增强型场效应晶体管采用高密度DMOS沟道技术制造用于减小导通电阻适合于低压应用和低功耗20V/5A超低导通电阻高密度电池设计

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CXMS5221SG Series Dual N-channel enhancement mode field-effect transistor produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation

产品特点返回TOP

l 20V/5A， RDS(ON) =29mΩ@ VGS=3.85V,ID=5A

l High Density Cell Design For Ultra Low On-Resistance 4rp嘉泰姆

l surface mount package：SOP84rp嘉泰姆

应用范围返回TOP

l Battery management

l power management 4rp嘉泰姆

l Portable equipment 4rp嘉泰姆

l Low power DC to DC converter. 4rp嘉泰姆

l Load switch 4rp嘉泰姆

l LCD adapter4rp嘉泰姆

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要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！4rp嘉泰姆

4rp嘉泰姆

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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管)4rp嘉泰姆
Part4rp嘉泰姆 Number4rp嘉泰姆	Mode4rp嘉泰姆	VDS(Max)4rp嘉泰姆	VGS4rp嘉泰姆	ID(Max)4rp嘉泰姆	RDS(on)4rp嘉泰姆	Application4rp嘉泰姆	Package4rp嘉泰姆
Part4rp嘉泰姆 Number4rp嘉泰姆	Mode4rp嘉泰姆	VDS(Max)4rp嘉泰姆	VGS4rp嘉泰姆	ID(Max)4rp嘉泰姆	RDS(on)4rp嘉泰姆	Application4rp嘉泰姆	Package4rp嘉泰姆
CXMS52134rp嘉泰姆	N channel4rp嘉泰姆	20V4rp嘉泰姆	12V4rp嘉泰姆	5.2A4rp嘉泰姆	37mΩ4rp嘉泰姆	①②③④⑤⑥⑦⑧4rp嘉泰姆	SOT234rp嘉泰姆
CXMS52204rp嘉泰姆	N channel4rp嘉泰姆	20V4rp嘉泰姆	8V4rp嘉泰姆	3A4rp嘉泰姆	22mΩ4rp嘉泰姆	①②③④⑤⑥⑦⑧4rp嘉泰姆	SOT23/SOT23-34rp嘉泰姆
CXMS5220-N4rp嘉泰姆	N channel4rp嘉泰姆	20V4rp嘉泰姆	12V4rp嘉泰姆	5.2A4rp嘉泰姆	29mΩ4rp嘉泰姆	①②③④⑤⑥⑦⑧4rp嘉泰姆	SOT234rp嘉泰姆
CXMS52214rp嘉泰姆	Double N4rp嘉泰姆	20V4rp嘉泰姆	12V4rp嘉泰姆	6A4rp嘉泰姆	22mΩ4rp嘉泰姆	①②③④⑤⑥⑦⑧4rp嘉泰姆	SOP84rp嘉泰姆
CXMS52224rp嘉泰姆	N channel4rp嘉泰姆	30V4rp嘉泰姆	12V4rp嘉泰姆	5.8A4rp嘉泰姆	25mΩ4rp嘉泰姆	①②③④⑤⑥⑦⑧4rp嘉泰姆	SOT23/SOT23-34rp嘉泰姆
CXMS5222-N4rp嘉泰姆	N channel4rp嘉泰姆	30V4rp嘉泰姆	20V4rp嘉泰姆	4.4A4rp嘉泰姆	35mΩ4rp嘉泰姆	①②③④⑤⑥⑦⑧4rp嘉泰姆	SOT234rp嘉泰姆
CXMS52234rp嘉泰姆	Double N4rp嘉泰姆	20V4rp嘉泰姆	12V4rp嘉泰姆	6A4rp嘉泰姆	21mΩ4rp嘉泰姆	①②③④⑤4rp嘉泰姆	SOT23-6/ TSSOP84rp嘉泰姆
CXMS52244rp嘉泰姆	Double N4rp嘉泰姆	20V4rp嘉泰姆	12V4rp嘉泰姆	5A4rp嘉泰姆	19mΩ4rp嘉泰姆	①②③④⑤⑥⑦⑧4rp嘉泰姆	TSSOP8/SOT264rp嘉泰姆
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection4rp嘉泰姆

CXMS5221

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产品概述返回TOP

CXMS5221SG Series Dual N-channel enhancement mode field-effect transistor produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation

产品特点返回TOP

l 20V/5A， RDS(ON) =29mΩ@ VGS=3.85V,ID=5A

应用范围返回TOP

l Battery management

产品封装图返回TOP

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CXMS5221

产品手册

产品简介

目录

产品概述 返回TOP

CXMS5221SG Series Dual N-channel enhancement mode field-effect transistor produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation

产品特点 返回TOP

l 20V/5A， RDS(ON) =29mΩ@ VGS=3.85V,ID=5A

应用范围 返回TOP

l Battery management

产品封装图 返回TOP

电路原理图 返回TOP

相关芯片选择指南 返回TOP 更多同类产品........

产品概述返回TOP

产品特点返回TOP

应用范围返回TOP

产品封装图返回TOP

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