CXMS5183

CXMS5183采用先进的沟槽技术和设计,以低栅极电荷提供优秀的无线电数据系统(ON)。该装置适用于DC-DC转换应用
低压门极驱动逻辑电平下运行的额定电压为1.8 V RDS(开)
轻薄(<0.8毫米)便于在薄环境中安装
共源配置的双向电流

CXMS5183采用沟槽技术和设计以低栅极电荷提供无线电数据系统(ON)用于DC-DC转换应用低压门极驱动逻辑电平下运行的额定电压为1.8 V RDS共源配置的双向电流

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   产品概述 返回TOPTzC嘉泰姆


The CXMS5183 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product CXMS5183 is Pb-free

   产品特点 返回TOPTzC嘉泰姆


z Lowest RDS(on) Solution in 2x2 mm PackageTzC嘉泰姆

z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic     TzC嘉泰姆

   Level TzC嘉泰姆

z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments TzC嘉泰姆

z Bidirectional Current Flow with Common Source Configuration TzC嘉泰姆

z DFN6 Package Provides Exposed Drain Pad for Excellent Thermal   TzC嘉泰姆

   ConductionTzC嘉泰姆

   应用范围 返回TOPTzC嘉泰姆


z Optimized for Battery and Load Management Applications in Portable   Equipment TzC嘉泰姆

z LiíIon Battery Charging and Protection Circuits TzC嘉泰姆

z High Power Management in Portable, Battery Powered Products TzC嘉泰姆

z High Side Load SwitchTzC嘉泰姆

   技术规格书(产品PDF) 返回TOP TzC嘉泰姆


     需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!TzC嘉泰姆

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电路原理图 返回TOPTzC嘉泰姆


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场效应晶体管 P沟道MOS管
Product Polarity Channel VDS VGS VGS(th) RDS(ON)@VGS=4.5V ID@TA=25oC Package Size
(Max.) (Max.) (Max.) (Typ.) (MAX.)
(V) (V) (V) (Ω) (A) (mm)(L×W)
CXMS5151 P 1 -20 ±8 -1 0.11 -1.4 SOT-323 2.1 x 2.3
CXMS5152 P 1 -12 ±12 -0.9 0.022 -5.1 DFN2020-6L 2.0 x 2.0
CXMS5153 P 1 -12 ±8 -0.9 0.031 -3.5 SOT-23 2.9 x 2.4
CXMS5154 P 1 -12 ±8 -1 0.015 -7.4 DFN2020-6L 2.0 x 2.0
CXMS5155 P 1 -12 ±8 -0.9 0.08 -1.5 SOT-323 2.1 x 2.3
CXMS5156 P+Diode 1 -20 ±8 -0.8 - -2.9 DFN3020-8L 3.0 x 2.0
CXMS5156B P+Diode 1 -20 ±8 -0.8 - -2.7 DFN3020-8L 3.0 x 2.0
CXMS5157 P+Diode 1 -20 ±8 -1 0.09 -3 DFN2020-6L 2.0 x 2.0
CXMS5158D P 1 -20 ±12 -1 0.042 -4 DFN3030-8L 3.0 x 3.0
CXMS5159 P 1 -20 ±8 -0.9 0.05 -4.1 DFN2020-6L 2.0 x 2.0
CXMS5160 P 1 -20 ±8 -0.8 0.081 -2.2 SOT-23 2.9 x 2.4
CXMS5161 P 1 -20 ±5 -0.9 0.48 -0.62 SOT-523 1.6 x 1.6
CXMS5162 P 1 -20 ±12 -1 0.056 -2.9 SOT-23 2.9 x 2.4
CXMS5163 P 1 -20 ±5 -0.8 0.495 -0.6 SOT-723 1.2 x 1.2
CXMS5164 P 1 -20 ±12 -1 0.047 -3.3 SOT-23-6L 2.9 x 2.8
CXMS5165 P 1 -20 ±12 -1 0.096 -2.2 SOT-23 2.9 x 2.4
CXMS5166 P 1 -20 ±5 -0.9 - -0.51 DFN1006-3L 1.0 x 0.6
CXMS5166B P 1 -20 ±5 -0.9 0.44 -0.51 DFN1006-3L 1.0 x 0.6
CXMS5167 P 1 -20 ±8 -1 0.017 -6.2 DFN2020-6L 2.0 x 2.0
CXMS5168 P 1 -20 ±12 -1 0.043 -4 SOT-23-3L 2.9 x 2.8
CXMS5169 P 1 -20 ±12 -1 0.043 -3.2 SOT-23 2.9 x 2.4
CXMS5170 P 1 -20 ±8 -1 0.081 -2.4 SOT-23 2.9 x 2.4
CXMS5171 P 1 -20 ±8 -1 0.052 -3.5 SOT-23-3L 2.9 x 2.8
CXMS5171A P 1 -20 ±12 -1 0.052 -3.5 SOT-23-3L 2.9 x 2.8
CXMS5172 P 1 -30 ±20 -2.5 0.079 -3.8 SOP-8L 4.9 x 6.0
CXMS5173 P 1 -30 ±20 -2.5 0.083 -4.1 SOT-23-3L 2.9 x 2.8
CXMS5174 P 1 -30 ±20 -2.5 0.08 -2.9 SOT-23 2.9 x 2.4
CXMS5175 P 1 -30 ±20 -2.5 0.077 -3.1 SOT-23 2.9 x 2.4
CXMS5176 P 1 -30 ±12 -1.5 0.043 -4.6 SOT-23-3L 2.9 x 2.8
CXMS5177 P 1 -30 ±20 -3 0.053 -3.7 SOT-23-3L 2.9 x 2.8
CXMS5178 Dual P 2 -30 ±12 -1.4 0.045 -5.6 SOP-8L 4.9 x 6.0
CXMS5179 Dual P 2 -30 ±20 -3 0.053 -5.5 SOP-8L 4.9 x 6.0
CXMS5180 P 1 -50 ±20 -2 3.5 -0.2 SOT-23 2.9 x 2.4
CXMS5181 P 1 -20 ±12 -1 0.025 -5.7 SOT-23-3 2.9 x 2.8
CXMS5182 P 1 -30 ±20 -3 0.053 -5.5 SOP-8L 4.9 x 6.0
CXMS5182A P 1 -30 ±20 -3 0.043 -5.4 SOP-8L 4.9 x 6.0
CXMS5183 Dual P 2 -20 ±8 -1 0.09 -3 DFN2020-6L 2.0 x 2.0
CXMS5184 Dual P 2 -20 ±12 -1 0.075 -3.1 DFN2020-6L 2.0 x 2.0
CXMS5185 Dual P 2 -20 ±12 -1 0.052 -3.7 DFN2020-6L 2.0 x 2.0
CXMS5186 Dual P 2 -20 ±6 -0.9 0.55 -0.56 SOT-563 1.6 x 1.6
CXMS5187 Dual P 2 -20 ±12 -2.5 0.07 -3.6 SOT-23-6L 2.9 x 2.8
CXMS5188 Dual P 2 -20 ±12 -2.5 0.07 -4.6 SOP-8L 4.9 x 6.0
CXMS5189 Dual P 2 -20 ±10 -1 0.08 -3.3 DFN2020-6L 2.0 x 2.0
CXMS5190 Dual P 2 -30 ±20 -2.5 0.07 -3.8 SOP-8L 4.9 x 6.0

◀ 上一篇:CXMS5179是双P通道逻辑增强型功率场效应晶体管采用高密度DMOS沟道技术制造适合于最小化导通电阻用于低压应用笔记本电脑电源管理和其他高侧开关的电池供电电路

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下一篇▶:CXMS5184共源配置的双向电流采用先进的沟槽技术和设计以低栅极电荷提供优秀的无线电数据系统(ON)该装置适用于DC-DC转换应用低压门极驱动逻辑电平下运行的额定电压为1.8 V RDS