CXMS5107是N和P通道增强MOS场效应晶体管作为DC-DC转换器或电平移位应用的单个封装采用先进的沟道技术和设计以提供低栅极电荷的优秀RDS（ON）
Trench Technology
Supper high density cell design for extremely low Rds(on)
Exceptional ON resistance and maximum DC current capability
[ CXMS5107 ]
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Trench Technology
Supper high density cell design for extremely low Rds(on)
Exceptional ON resistance and maximum DC current capability
Small package design with SOT-563
应用范围 返回TOP
Driver: Relays, Solenoids, Lamps, Hammers
Power supply converters circuit
Load/Power Switching for potable device
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| 场效应晶体管 | |||||||||
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Product |
Polarity | Channel | VDS | VGS | VGS(th) | RDS(ON)@VGS=4.5V | ID@TA=25oC | Package | Size |
| (Max.) | (Max.) | (Max.) | (Typ.) | (MAX.) | (L×W) | ||||
| (V) | (V) | (V) | (Ω) | (A) | (mm) | ||||
| CXMS5105 | N + P | 2 | 20/-20 | ±6/±8 | 0.85/-1.0 | 0.18/0.085 | 0.65/-3.1 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5106 | N + P | 2 | 20/-20 | ±6 | 0.9/-0.9 | 0.23/0.52 | 0.8/-0.59 | SOT-363 | 2.1 x 2.3 |
| CXMS5107 | N + P | 2 | 20/-20 | ±6 | 0.9/-0.9 | 0.18/0.45 | 0.79/-0.5 | SOT-563 | 1.6 x 1.6 |
| CXMS5108 | N + P | 2 | 20/-20 | ±8 | 1/-1 | 0.033/0.085 | 4.4/-2.8 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5109 | N + P | 2 | 12/-12 | ±8 | 1.2/-1.2 | 0.028/-0.057 | 5.1/-4.0 | DFN2020-6L | 2.0 x 2.0 |
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