CXNP5417

The CXNP5417 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. Standard Product CXNP5417 is Pb-free
 Ultra low collector-to-emitter saturation voltage
 High DC current gain >100
 1A continue collector current

The CXNP5417 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. Standard Product CXNP5417 is Pb-free

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The CXNP5417 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. Standard Product CXNP5417 is Pb-free

   产品特点 返回TOPx4t嘉泰姆


 Ultra low collector-to-emitter saturation voltage x4t嘉泰姆

 High DC current gain >100 x4t嘉泰姆

 1A continue collector current x4t嘉泰姆

 Small package DFN2x2-6Lx4t嘉泰姆

   应用范围 返回TOPx4t嘉泰姆


 Charging circuit x4t嘉泰姆

 Other power management in portable equipmentsx4t嘉泰姆

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双极型晶体管 
Product Polarity BVCEO BVCBO BVEBO VCE(sat) IC HFE Package Size
(Max.) (Max.) (Max.) (Typ.) (Max.)   (L×W)
(V) (V)(Max.) (V)(Max.) (V) (A) (Typ.) (mm)
CXNP5411 NPN 40 60 6 - 0.2 100 SOT-23 2.9 x 2.4
CXNP5412 PNP -30 -30 -6 -0.2 -3 300 SOT-89-3L 4.5 x 4.1
CXNP5413 PNP -40 -40 -5 - -0.2 100 SOT-23 2.9 x 2.4
CXNP5414 PNP -30 -30 6 -0.28 -3 200 SOT-23-6L 2.9 x 2.8
CXNP5415 PNP -30 -30 -6 - -3 100 SOT-23-6L 2.9 x 2.8
CXNP5416 PNP+MOS -30 -30 -6 -0.2 -3 300 DFN2020-6L 2.0 x 2.0
CXNP5417 PNP+MOS -30 -30 -6 -0.1 -1 300 DFN2020-6L 2.0 x 2.0
CXNP5418 PNP -32 -45 -6 -0.2 -3 200 PDFN3020-8L 3.0 x 2

◀ 上一篇:The CXNP5416 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. Standard Product CXNP5416 is Pb-free.

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下一篇▶:The CXNP5418 is PNP bipolar power transistor with very low saturation voltage. This device is suitable for use in charging circuit and power management. Standard Product CXNP5418 is Pb-free.