CXMS5203

CXMS5203是N通道逻辑增强型功率场效应晶体管,采用高单元密度DMOS沟道技术制造。这种高密度工艺特别适合于最小化通态电阻。这些设备特别适合于低电压应用,如蜂窝电话和笔记本电脑电源管理和其他电池供电电路,并且在非常小的外形表面贴装封装中需要低串联功耗。

CXMS5203是N通道逻辑增强型功率场效应晶体管采用高单元密度DMOS沟道技术制造适合于低电压应用蜂窝电话和笔记本电脑电源管理和其他电池供电电路

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                          目录ENq嘉泰姆

   1.产品概述      2.产品特点      3.应用范围     4.技术规格书下载(PDF文档)ENq嘉泰姆

   5.产品封装      6.电路原理图     7.相关产品ENq嘉泰姆

一.产品概述ENq嘉泰姆


    The CXMS5203 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. ENq嘉泰姆

二.产品特点ENq嘉泰姆


 z 20V/6.0A, RDS(ON) = 27mΩ (Typ.) @VGS = 10VENq嘉泰姆

 z 20V/5.0A, RDS(ON) = 30mΩ @VGS = 4.5VENq嘉泰姆

 z 20V/4.5A, RDS(ON) = 34mΩ @VGS = 2.5VENq嘉泰姆

 z 20V/4.0A, RDS(ON) = 40mΩ @VGS = 1.8VENq嘉泰姆

 z Super high density cell design for extremely low RDS(ON)ENq嘉泰姆

 z Exceptional on-resistance and Maximum DC current capabilityENq嘉泰姆

 z SOT-23-3L package designENq嘉泰姆

三.应用范围ENq嘉泰姆


    ENq嘉泰姆

四.技术规格书(产品PDF)ENq嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!ENq嘉泰姆

 QQ截图20160419174301.jpgENq嘉泰姆

五.产品封装图ENq嘉泰姆


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六.电路原理图ENq嘉泰姆


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七.相关芯片选择指南     更多的同类产品......ENq嘉泰姆


MOSFET
型号 说明
CXMS5202 2A N MOS
CXMS5203 4A/ 20V NMOS
CXMS5206 30V/4A NMOS
CX15N10 15A-100V NMOS

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