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CXMS5129

The CXMS5129 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product CXMS5129 is Pb-free and Halogen-free.
 Trench Technology
 Supper high density cell design
 Excellent ON resistance for higher DC current
 Extremely Low Threshold Voltage

Single N-Channel, 60V, 0.50A, Power MOSFET CXMS5129 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate char

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   产品概述 返回TOPxva嘉泰姆

The CXMS5129 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product CXMS5129 is Pb-free and Halogen-free.

   产品特点 返回TOPxva嘉泰姆

 Trench Technology xva嘉泰姆

 Supper high density cell design xva嘉泰姆

 Excellent ON resistance for higher DC current xva嘉泰姆

 Extremely Low Threshold Voltage xva嘉泰姆

 Small package SOT-23xva嘉泰姆

   应用范围 返回TOPxva嘉泰姆

 Driver for Relay, Solenoid, Motor, LED etc. xva嘉泰姆

 DC-DC converter circuit  Power Switch xva嘉泰姆

 Load Switch xva嘉泰姆

 Chargingxva嘉泰姆

   技术规格书（产品PDF) 返回TOP xva嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！xva嘉泰姆

 QQ截图20160419174301.jpgxva嘉泰姆

产品封装图 返回TOPxva嘉泰姆

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电路原理图 返回TOPxva嘉泰姆

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场效应晶体管 N沟道MOS管
Product Polarity Channel VDS VGS VGS(th) RDS(ON)@VGS=4.5V ID@TA=25oC Package Size
(Max.) (Max.) (Max.) (Typ.) (MAX.)
(V) (V) (V) (Ω) (A) (mm)(L×W)
CX380N60T N 1 600 ±30 4.5 0.36 10.6 TO-220 22 x 10
CX380N60TF N 1 600 ±30 4.5 0.36 10.6 TO-220F 29 x 10
CX380N60TG N 1 600 ±30 4.5 0.36 10.6 TO-252E-2 10 x 6.6
CX470N60T N 1 600 ±30 4.5 0.42 9.4 TO-220 22 x 10
CX470N60TF N 1 600 ±30 4.5 0.42 9.4 TO-220F 29 x 10
CX650N60T N 1 600 ±30 4.5 0.55 7.3 TO-220 22 x 10
CX650N60TF N 1 600 ±30 4.5 0.55 7.3 TO-220F 29 x 10
CX650N60TG N 1 600 ±30 4.5 0.55 7.3 TO-252E-2 10 x 6.6
CX650N60TN N 1 600 ±30 4.5 0.55 7.3 TO-251(IPAK) 15.4 x 6.6
CX01N10 N 1 100 ±20 2.5 0.255 1.7 SOT-23 2.9 x 2.4
CX01N11 N 1 110 ±20 2.5 0.25 1.8 SOT-23-6L 2.9 x 2.8
CX07N60 N 1 600 ±30 5 1 7 TO-220 22 x 10
CX07N60F N 1 600 ±30 5 1 7 TO-220F 29 x 10
CX07N65 N 1 650 ±30 5 1.05 7 TO-220 22 x 10
CX07N65F N 1 650 ±30 5 1 7 TO-220F 29 x 10
CX12N65 N 1 650 ±30 5 0.57 12 TO-220 22 x 10
CX12N65F N 1 650 ±30 5 0.57 12 TO-220F 29 x 10
CXMS5110 N 1 20 ±8 1 0.04 3.2 SOT-23 2.9 x 2.4
CXMS5111 N 1 20 ±6 0.85 0.22 0.9 SOT-23 2.9 x 2.4
CXMS5112 N 1 20 ±6 0.85 0.22 0.89 SOT-323 2.1 x 2.3
CXMS5113 N 1 20 ±8 1 0.027 3.9 SOT-23 2.9 x 2.4
CXMS5114 N 1 20 ±6 1 0.21 0.95 SOT-723 1.2 x 1.2
CXMS5115 N 1 20 ±5 0.85 0.22 0.71 DFN1006-3L 1.0 x 0.6
CXMS5115B N 1 20 ±5 0.85 0.22 0.71 DFN1006-3L 1.0 x 0.6
CXMS5116 N 1 20 ±5 0.85 0.22 0.66 DFN1006-3L 1.0 x 0.6
CXMS5117 N 1 20 ±10 1 0.42 0.54 SOT-723 1.2 x 1.2
CXMS5118 N 1 30 ±20 3 0.043 4 SOT-23 2.9 x 2.4
CXMS5119 N 1 30 ±20 2 0.057 3.1 SOT-23 2.9 x 2.4
CXMS5120 N 1 30 ±20 3 0.039 5.7 SOT-23-6L 2.9 x 2.8
CXMS5121 N 1 30 ±20 1.5 1.3 0.25 SOT-723 1.2 x 1.2
CXMS5122 N 1 30 20 2 0.025 5.7 DFN2020-6L 2.0 x 2.0
CXMS5123 N 1 30 ±20 1.5 1.3 0.25 SOT-323 2.1 x 2.3
CXMS5124 N 1 30 ±20 1.5 1.3 0.25 SOT-523 1.6 x 1.6
CXMS5125 N 1 20 ±6 1 0.41 0.8 SOT-523 1.6 x 1.6
CXMS5126 N 1 20 ±6 1 1.65 0.6 SOT-523 1.6 x 1.6
CXMS5127 N 1 45 ±20 1.5 0.142 1.7 SOT-23 2.9 x 2.4
CXMS5128 N 1 20 ±6 1 0.22 0.88 SOT-523 1.6 x 1.6
CXMS5129 N 1 60 ±20 2 1.7 0.5 SOT-23 2.9 x 2.4
CXMS5130 N 1 60 ±20 2 1.7 0.3 SOT-323 2.1 x 2.3
CXMS5131 N 2 20 ±12 1 0.42 0.56 SOT-363 2.1 x 2.3
CXMS5132 Dual N 2 20 ±6 0.85 0.22 0.89 SOT-363 2.1 x 2.3
CXMS5133 Dual N 2 20 ±6 0.85 0.22 0.88 SOT-563 1.6 x 1.6
CXMS5134 Dual N 2 20 ±10 1 0.0148 7 TSSOP-8L 3 x 6.4
CXMS5135 Dual N 2 20 ±10 1 0.0157 6.3 SOT-23-6L 2.9 x 2.8
CXMS5136 Dual N 2 20 ±10 1 0.016 4.8 PDFN2.9x2.8-8L 2.9 x 2.8
CXMS5137 Dual N 2 60 ±20 2 1.7 0.32 SOT-363 2.1 x 2.3
CXMS5138 Dual N 2 20 ±10 1 0.022 5 SOT-23-6L 2.9 x 2.8
CXMS5139 N 2 20 ±10 1 0.016 6.3 SOT-23-6 2.92 x 2.8
CXMS5140 Dual N 2 20 ±10 1 0.022 5.1 TSSOP-8L 3 x 6.4
CXMS5141 Dual N 2 20 ±12 1 0.018 6 WLCSP-4L 1.47 x 1.47
CXMS5142 Dual N 2 20 ±10 1 0.015 7 TSSOP-8L 3 x 6.4
CXMS5143 Dual N 2 20 ±12 1 0.013 6 WLCSP-4L 1.47 x 1.47
CXMS5144 Dual N 2 12 ±10 1.2 0.0095 6 WLCSP-4L 1.47 x 1.47
CXMS5145 Dual N 2 20 ±10 1 0.055 2.6 SOT-23-6L 2.9 x 2.8
CXMS5146 Dual N 2 20 ±12 1 0.012 6 DFN2020-4L 2.0 x 2.0
CXMS5147 Dual N 2 20 ±10 1 0.0175 6.3 TSOT-23-6L 2.9 x 2.8
CXMS5148 N 2 20 ±10 1 0.0095 11 PDFN3x3-8L 2.9 x 2.8
CXMS5149 Dual N 2 30 ±20 2.2 0.033 6.8 SOP-8L 4.9 x 6.0
CXMS5150 Dual N 2 60 ±20 2 1.7 0.3 SOT-563 1.6 x 1.6

◀ 上一篇:N-Channel, 20V, 0.88A, Small Signal MOSFET CXMS5128 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate

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下一篇▶: The CXMS5130 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power sw

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