CXMS5175是P沟道增强MOS场效应晶体管。采用先进的沟槽技术和设计，以低栅极电荷提供优秀的RDS（ON）。该装置适用于DC-DC转换、电源开关和充电电路。标准产品CXMS5175不含铅。
超高密度电池设计
优良的电阻
•极低阈值电压
[ CXMS5175 ]
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产品概述 返回TOP
产品特点 返回TOP
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
应用范围 返回TOP
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
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| 场效应晶体管 P沟道MOS管 | |||||||||
| Product | Polarity | Channel | VDS | VGS | VGS(th) | RDS(ON)@VGS=4.5V | ID@TA=25oC | Package | Size |
| (Max.) | (Max.) | (Max.) | (Typ.) | (MAX.) | |||||
| (V) | (V) | (V) | (Ω) | (A) | (mm)(L×W) | ||||
| CXMS5151 | P | 1 | -20 | ±8 | -1 | 0.11 | -1.4 | SOT-323 | 2.1 x 2.3 |
| CXMS5152 | P | 1 | -12 | ±12 | -0.9 | 0.022 | -5.1 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5153 | P | 1 | -12 | ±8 | -0.9 | 0.031 | -3.5 | SOT-23 | 2.9 x 2.4 |
| CXMS5154 | P | 1 | -12 | ±8 | -1 | 0.015 | -7.4 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5155 | P | 1 | -12 | ±8 | -0.9 | 0.08 | -1.5 | SOT-323 | 2.1 x 2.3 |
| CXMS5156 | P+Diode | 1 | -20 | ±8 | -0.8 | - | -2.9 | DFN3020-8L | 3.0 x 2.0 |
| CXMS5156B | P+Diode | 1 | -20 | ±8 | -0.8 | - | -2.7 | DFN3020-8L | 3.0 x 2.0 |
| CXMS5157 | P+Diode | 1 | -20 | ±8 | -1 | 0.09 | -3 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5158D | P | 1 | -20 | ±12 | -1 | 0.042 | -4 | DFN3030-8L | 3.0 x 3.0 |
| CXMS5159 | P | 1 | -20 | ±8 | -0.9 | 0.05 | -4.1 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5160 | P | 1 | -20 | ±8 | -0.8 | 0.081 | -2.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5161 | P | 1 | -20 | ±5 | -0.9 | 0.48 | -0.62 | SOT-523 | 1.6 x 1.6 |
| CXMS5162 | P | 1 | -20 | ±12 | -1 | 0.056 | -2.9 | SOT-23 | 2.9 x 2.4 |
| CXMS5163 | P | 1 | -20 | ±5 | -0.8 | 0.495 | -0.6 | SOT-723 | 1.2 x 1.2 |
| CXMS5164 | P | 1 | -20 | ±12 | -1 | 0.047 | -3.3 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5165 | P | 1 | -20 | ±12 | -1 | 0.096 | -2.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5166 | P | 1 | -20 | ±5 | -0.9 | - | -0.51 | DFN1006-3L | 1.0 x 0.6 |
| CXMS5166B | P | 1 | -20 | ±5 | -0.9 | 0.44 | -0.51 | DFN1006-3L | 1.0 x 0.6 |
| CXMS5167 | P | 1 | -20 | ±8 | -1 | 0.017 | -6.2 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5168 | P | 1 | -20 | ±12 | -1 | 0.043 | -4 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5169 | P | 1 | -20 | ±12 | -1 | 0.043 | -3.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5170 | P | 1 | -20 | ±8 | -1 | 0.081 | -2.4 | SOT-23 | 2.9 x 2.4 |
| CXMS5171 | P | 1 | -20 | ±8 | -1 | 0.052 | -3.5 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5171A | P | 1 | -20 | ±12 | -1 | 0.052 | -3.5 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5172 | P | 1 | -30 | ±20 | -2.5 | 0.079 | -3.8 | SOP-8L | 4.9 x 6.0 |
| CXMS5173 | P | 1 | -30 | ±20 | -2.5 | 0.083 | -4.1 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5174 | P | 1 | -30 | ±20 | -2.5 | 0.08 | -2.9 | SOT-23 | 2.9 x 2.4 |
| CXMS5175 | P | 1 | -30 | ±20 | -2.5 | 0.077 | -3.1 | SOT-23 | 2.9 x 2.4 |
| CXMS5176 | P | 1 | -30 | ±12 | -1.5 | 0.043 | -4.6 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5177 | P | 1 | -30 | ±20 | -3 | 0.053 | -3.7 | SOT-23-3L | 2.9 x 2.8 |
| CXMS5178 | Dual P | 2 | -30 | ±12 | -1.4 | 0.045 | -5.6 | SOP-8L | 4.9 x 6.0 |
| CXMS5179 | Dual P | 2 | -30 | ±20 | -3 | 0.053 | -5.5 | SOP-8L | 4.9 x 6.0 |
| CXMS5180 | P | 1 | -50 | ±20 | -2 | 3.5 | -0.2 | SOT-23 | 2.9 x 2.4 |
| CXMS5181 | P | 1 | -20 | ±12 | -1 | 0.025 | -5.7 | SOT-23-3 | 2.9 x 2.8 |
| CXMS5182 | P | 1 | -30 | ±20 | -3 | 0.053 | -5.5 | SOP-8L | 4.9 x 6.0 |
| CXMS5182A | P | 1 | -30 | ±20 | -3 | 0.043 | -5.4 | SOP-8L | 4.9 x 6.0 |
| CXMS5183 | Dual P | 2 | -20 | ±8 | -1 | 0.09 | -3 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5184 | Dual P | 2 | -20 | ±12 | -1 | 0.075 | -3.1 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5185 | Dual P | 2 | -20 | ±12 | -1 | 0.052 | -3.7 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5186 | Dual P | 2 | -20 | ±6 | -0.9 | 0.55 | -0.56 | SOT-563 | 1.6 x 1.6 |
| CXMS5187 | Dual P | 2 | -20 | ±12 | -2.5 | 0.07 | -3.6 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5188 | Dual P | 2 | -20 | ±12 | -2.5 | 0.07 | -4.6 | SOP-8L | 4.9 x 6.0 |
| CXMS5189 | Dual P | 2 | -20 | ±10 | -1 | 0.08 | -3.3 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5190 | Dual P | 2 | -30 | ±20 | -2.5 | 0.07 | -3.8 | SOP-8L | 4.9 x 6.0 |
◀ 上一篇:CXMS5174极低阈值电压是P沟道增强MOS场效应晶体管采用先进的沟槽技术和设计以低栅极电荷提供优秀的RDS（ON）适用于DC-DC转换电源开关和充电电路高直流电流的优良导通电阻
下一篇▶:CXMS5176是P通道逻辑增强型功率场效应晶体管采用高密度DMOS沟道技术制造这种高密度工艺特别适合于最小化状态电阻适用于低压应用笔记本电脑电源管理和其他电池供电电路的高压侧开关
