CXMS5162

CXMS5162是P沟道增强MOS场效应晶体管。采用先进的沟槽技术和设计,以低栅极电荷提供优秀的RDS(ON)。该装置适用于DC-DC转换、电源开关和充电电路。标准产品CXMS5162不含铅和卤素。
沟槽技术
超高密度电池设计
高直流电流的优良导通电阻
极低阈值电压

CXMS5162是P沟道增强MOS场效应晶体管采用先进的沟槽技术和设计低栅极电荷提供优秀的RDS(ON)适用于DC-DC转换电源开关和充电电路超高密度电池设计高直流电流的优良导通电阻极低阈值电压

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   产品概述 返回TOPzOT嘉泰姆


The CXMS5162 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product CXMS5162 is Pb-free and Halogen-free.

   产品特点 返回TOPzOT嘉泰姆


 Trench Technology zOT嘉泰姆

 Supper high density cell design zOT嘉泰姆

 Excellent ON resistance for higher DC current zOT嘉泰姆

 Extremely Low Threshold Voltage zOT嘉泰姆

 Small package SOT-23 AppzOT嘉泰姆

   应用范围 返回TOPzOT嘉泰姆


 Driver for Relay, Solenoid, Motor, LED etc. zOT嘉泰姆

 DC-DC converter circuit zOT嘉泰姆

 Power Switch zOT嘉泰姆

 Load Switch zOT嘉泰姆

 Charging SOzOT嘉泰姆

   技术规格书(产品PDF) 返回TOP zOT嘉泰姆


     需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!zOT嘉泰姆

 QQ截图20160419174301.jpgzOT嘉泰姆

产品封装图 返回TOPzOT嘉泰姆


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电路原理图 返回TOPzOT嘉泰姆


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场效应晶体管 P沟道MOS管
Product Polarity Channel VDS VGS VGS(th) RDS(ON)@VGS=4.5V ID@TA=25oC Package Size
(Max.) (Max.) (Max.) (Typ.) (MAX.)
(V) (V) (V) (Ω) (A) (mm)(L×W)
CXMS5151 P 1 -20 ±8 -1 0.11 -1.4 SOT-323 2.1 x 2.3
CXMS5152 P 1 -12 ±12 -0.9 0.022 -5.1 DFN2020-6L 2.0 x 2.0
CXMS5153 P 1 -12 ±8 -0.9 0.031 -3.5 SOT-23 2.9 x 2.4
CXMS5154 P 1 -12 ±8 -1 0.015 -7.4 DFN2020-6L 2.0 x 2.0
CXMS5155 P 1 -12 ±8 -0.9 0.08 -1.5 SOT-323 2.1 x 2.3
CXMS5156 P+Diode 1 -20 ±8 -0.8 - -2.9 DFN3020-8L 3.0 x 2.0
CXMS5156B P+Diode 1 -20 ±8 -0.8 - -2.7 DFN3020-8L 3.0 x 2.0
CXMS5157 P+Diode 1 -20 ±8 -1 0.09 -3 DFN2020-6L 2.0 x 2.0
CXMS5158D P 1 -20 ±12 -1 0.042 -4 DFN3030-8L 3.0 x 3.0
CXMS5159 P 1 -20 ±8 -0.9 0.05 -4.1 DFN2020-6L 2.0 x 2.0
CXMS5160 P 1 -20 ±8 -0.8 0.081 -2.2 SOT-23 2.9 x 2.4
CXMS5161 P 1 -20 ±5 -0.9 0.48 -0.62 SOT-523 1.6 x 1.6
CXMS5162 P 1 -20 ±12 -1 0.056 -2.9 SOT-23 2.9 x 2.4
CXMS5163 P 1 -20 ±5 -0.8 0.495 -0.6 SOT-723 1.2 x 1.2
CXMS5164 P 1 -20 ±12 -1 0.047 -3.3 SOT-23-6L 2.9 x 2.8
CXMS5165 P 1 -20 ±12 -1 0.096 -2.2 SOT-23 2.9 x 2.4
CXMS5166 P 1 -20 ±5 -0.9 - -0.51 DFN1006-3L 1.0 x 0.6
CXMS5166B P 1 -20 ±5 -0.9 0.44 -0.51 DFN1006-3L 1.0 x 0.6
CXMS5167 P 1 -20 ±8 -1 0.017 -6.2 DFN2020-6L 2.0 x 2.0
CXMS5168 P 1 -20 ±12 -1 0.043 -4 SOT-23-3L 2.9 x 2.8
CXMS5169 P 1 -20 ±12 -1 0.043 -3.2 SOT-23 2.9 x 2.4
CXMS5170 P 1 -20 ±8 -1 0.081 -2.4 SOT-23 2.9 x 2.4
CXMS5171 P 1 -20 ±8 -1 0.052 -3.5 SOT-23-3L 2.9 x 2.8
CXMS5171A P 1 -20 ±12 -1 0.052 -3.5 SOT-23-3L 2.9 x 2.8
CXMS5172 P 1 -30 ±20 -2.5 0.079 -3.8 SOP-8L 4.9 x 6.0
CXMS5173 P 1 -30 ±20 -2.5 0.083 -4.1 SOT-23-3L 2.9 x 2.8
CXMS5174 P 1 -30 ±20 -2.5 0.08 -2.9 SOT-23 2.9 x 2.4
CXMS5175 P 1 -30 ±20 -2.5 0.077 -3.1 SOT-23 2.9 x 2.4
CXMS5176 P 1 -30 ±12 -1.5 0.043 -4.6 SOT-23-3L 2.9 x 2.8
CXMS5177 P 1 -30 ±20 -3 0.053 -3.7 SOT-23-3L 2.9 x 2.8
CXMS5178 Dual P 2 -30 ±12 -1.4 0.045 -5.6 SOP-8L 4.9 x 6.0
CXMS5179 Dual P 2 -30 ±20 -3 0.053 -5.5 SOP-8L 4.9 x 6.0
CXMS5180 P 1 -50 ±20 -2 3.5 -0.2 SOT-23 2.9 x 2.4
CXMS5181 P 1 -20 ±12 -1 0.025 -5.7 SOT-23-3 2.9 x 2.8
CXMS5182 P 1 -30 ±20 -3 0.053 -5.5 SOP-8L 4.9 x 6.0
CXMS5182A P 1 -30 ±20 -3 0.043 -5.4 SOP-8L 4.9 x 6.0
CXMS5183 Dual P 2 -20 ±8 -1 0.09 -3 DFN2020-6L 2.0 x 2.0
CXMS5184 Dual P 2 -20 ±12 -1 0.075 -3.1 DFN2020-6L 2.0 x 2.0
CXMS5185 Dual P 2 -20 ±12 -1 0.052 -3.7 DFN2020-6L 2.0 x 2.0
CXMS5186 Dual P 2 -20 ±6 -0.9 0.55 -0.56 SOT-563 1.6 x 1.6
CXMS5187 Dual P 2 -20 ±12 -2.5 0.07 -3.6 SOT-23-6L 2.9 x 2.8
CXMS5188 Dual P 2 -20 ±12 -2.5 0.07 -4.6 SOP-8L 4.9 x 6.0
CXMS5189 Dual P 2 -20 ±10 -1 0.08 -3.3 DFN2020-6L 2.0 x 2.0
CXMS5190 Dual P 2 -30 ±20 -2.5 0.07 -3.8 SOP-8L 4.9 x 6.0

◀ 上一篇:CXMS5161高直流电流的优良导通电阻极低阈值电压是P沟道增强MOS场效应晶体管采用先进的沟槽技术和设计以低栅极电荷提供优秀的RDS(ON)适用于DC-DC转换电源开关和充电电路

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下一篇▶:CXMS5163超高密度电池设计高直流电流的优良导通电阻极低阈值电压是P沟道增强MOS场效应晶体管采用先进的沟槽技术和设计低栅极电荷提供优秀的RDS ON适用于DC-DC转换电源开关和充电电路