CXMS5158D

CXMS5158D这种单P沟道MOSFET是采用沟道工艺生产的,沟道工艺提供了最小的电阻性能。增强型功率MOSFET,采用DFN3x3封装,2.0W功耗安装,1英寸衬垫。该装置适用于手机应用中的大功率充电电路。它也可以用于大功率开关应用

CXMS5158D这种单P沟道MOSFET是采用沟道工艺生产的沟道工艺提供电阻性能增强型功率MOSFET用于手机应用中的大功率充电电路大功率开关应用

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   产品概述 返回TOPLva嘉泰姆


This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. CXMS5158D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging circuit of mobile phone application. It also can be used in a high power switching application.

   产品特点 返回TOPLva嘉泰姆


z Max Rds(on) 42mŸŸ Ÿ @ Vgs=-4.5V Lva嘉泰姆

z Max Vds -20V Lva嘉泰姆

z Max Current -4.0A Lva嘉泰姆

z Typical Vgs(th) -0.65V @ Id=-250uA Lva嘉泰姆

z Power Dissipation 2.0W (Note2) Lva嘉泰姆

z High performance Trench process Lva嘉泰姆

z DFN3x3-8L Package Lva嘉泰姆

z Pb-FreeLva嘉泰姆

   应用范围 返回TOPLva嘉泰姆


z Battery charging Lva嘉泰姆

z Load Switch Lva嘉泰姆

z Power Switch Lva嘉泰姆

z DC-DC converterLva嘉泰姆

   技术规格书(产品PDF) 返回TOP Lva嘉泰姆


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产品封装图 返回TOPLva嘉泰姆


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电路原理图 返回TOPLva嘉泰姆


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场效应晶体管 P沟道MOS管
Product Polarity Channel VDS VGS VGS(th) RDS(ON)@VGS=4.5V ID@TA=25oC Package Size
(Max.) (Max.) (Max.) (Typ.) (MAX.)
(V) (V) (V) (Ω) (A) (mm)(L×W)
CXMS5151 P 1 -20 ±8 -1 0.11 -1.4 SOT-323 2.1 x 2.3
CXMS5152 P 1 -12 ±12 -0.9 0.022 -5.1 DFN2020-6L 2.0 x 2.0
CXMS5153 P 1 -12 ±8 -0.9 0.031 -3.5 SOT-23 2.9 x 2.4
CXMS5154 P 1 -12 ±8 -1 0.015 -7.4 DFN2020-6L 2.0 x 2.0
CXMS5155 P 1 -12 ±8 -0.9 0.08 -1.5 SOT-323 2.1 x 2.3
CXMS5156 P+Diode 1 -20 ±8 -0.8 - -2.9 DFN3020-8L 3.0 x 2.0
CXMS5156B P+Diode 1 -20 ±8 -0.8 - -2.7 DFN3020-8L 3.0 x 2.0
CXMS5157 P+Diode 1 -20 ±8 -1 0.09 -3 DFN2020-6L 2.0 x 2.0
CXMS5158D P 1 -20 ±12 -1 0.042 -4 DFN3030-8L 3.0 x 3.0
CXMS5159 P 1 -20 ±8 -0.9 0.05 -4.1 DFN2020-6L 2.0 x 2.0
CXMS5160 P 1 -20 ±8 -0.8 0.081 -2.2 SOT-23 2.9 x 2.4
CXMS5161 P 1 -20 ±5 -0.9 0.48 -0.62 SOT-523 1.6 x 1.6
CXMS5162 P 1 -20 ±12 -1 0.056 -2.9 SOT-23 2.9 x 2.4
CXMS5163 P 1 -20 ±5 -0.8 0.495 -0.6 SOT-723 1.2 x 1.2
CXMS5164 P 1 -20 ±12 -1 0.047 -3.3 SOT-23-6L 2.9 x 2.8
CXMS5165 P 1 -20 ±12 -1 0.096 -2.2 SOT-23 2.9 x 2.4
CXMS5166 P 1 -20 ±5 -0.9 - -0.51 DFN1006-3L 1.0 x 0.6
CXMS5166B P 1 -20 ±5 -0.9 0.44 -0.51 DFN1006-3L 1.0 x 0.6
CXMS5167 P 1 -20 ±8 -1 0.017 -6.2 DFN2020-6L 2.0 x 2.0
CXMS5168 P 1 -20 ±12 -1 0.043 -4 SOT-23-3L 2.9 x 2.8
CXMS5169 P 1 -20 ±12 -1 0.043 -3.2 SOT-23 2.9 x 2.4
CXMS5170 P 1 -20 ±8 -1 0.081 -2.4 SOT-23 2.9 x 2.4
CXMS5171 P 1 -20 ±8 -1 0.052 -3.5 SOT-23-3L 2.9 x 2.8
CXMS5171A P 1 -20 ±12 -1 0.052 -3.5 SOT-23-3L 2.9 x 2.8
CXMS5172 P 1 -30 ±20 -2.5 0.079 -3.8 SOP-8L 4.9 x 6.0
CXMS5173 P 1 -30 ±20 -2.5 0.083 -4.1 SOT-23-3L 2.9 x 2.8
CXMS5174 P 1 -30 ±20 -2.5 0.08 -2.9 SOT-23 2.9 x 2.4
CXMS5175 P 1 -30 ±20 -2.5 0.077 -3.1 SOT-23 2.9 x 2.4
CXMS5176 P 1 -30 ±12 -1.5 0.043 -4.6 SOT-23-3L 2.9 x 2.8
CXMS5177 P 1 -30 ±20 -3 0.053 -3.7 SOT-23-3L 2.9 x 2.8
CXMS5178 Dual P 2 -30 ±12 -1.4 0.045 -5.6 SOP-8L 4.9 x 6.0
CXMS5179 Dual P 2 -30 ±20 -3 0.053 -5.5 SOP-8L 4.9 x 6.0
CXMS5180 P 1 -50 ±20 -2 3.5 -0.2 SOT-23 2.9 x 2.4
CXMS5181 P 1 -20 ±12 -1 0.025 -5.7 SOT-23-3 2.9 x 2.8
CXMS5182 P 1 -30 ±20 -3 0.053 -5.5 SOP-8L 4.9 x 6.0
CXMS5182A P 1 -30 ±20 -3 0.043 -5.4 SOP-8L 4.9 x 6.0
CXMS5183 Dual P 2 -20 ±8 -1 0.09 -3 DFN2020-6L 2.0 x 2.0
CXMS5184 Dual P 2 -20 ±12 -1 0.075 -3.1 DFN2020-6L 2.0 x 2.0
CXMS5185 Dual P 2 -20 ±12 -1 0.052 -3.7 DFN2020-6L 2.0 x 2.0
CXMS5186 Dual P 2 -20 ±6 -0.9 0.55 -0.56 SOT-563 1.6 x 1.6
CXMS5187 Dual P 2 -20 ±12 -2.5 0.07 -3.6 SOT-23-6L 2.9 x 2.8
CXMS5188 Dual P 2 -20 ±12 -2.5 0.07 -4.6 SOP-8L 4.9 x 6.0
CXMS5189 Dual P 2 -20 ±10 -1 0.08 -3.3 DFN2020-6L 2.0 x 2.0
CXMS5190 Dual P 2 -30 ±20 -2.5 0.07 -3.8 SOP-8L 4.9 x 6.0

◀ 上一篇:CXMS5155是P沟道增强MOS场效应晶体管采用先进的沟槽技术和设计低栅极电荷提供优秀的RDS(ON)适用于DC-DC转换电源开关和充电电路

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