CXSD62108单相恒定时间同步的脉宽调制控制器驱动N通道mosfet笔记本电脑中产生低压芯片组RAM电源的电压
发表时间:2020-04-23
浏览次数:62

目录ilM嘉泰姆

1.产品概述                       2.产品特点ilM嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 ilM嘉泰姆
5.产品封装图                     6.电路原理图                   ilM嘉泰姆
7.功能概述                        8.相关产品ilM嘉泰姆

一,产品概述(General Description)         ilM嘉泰姆
      The CXSD62108 is a single-phase, constant-on-time,synchronous PWMilM嘉泰姆
controller, which drives N-channel MOSFETs. The CXSD62108 steps down highilM嘉泰姆
voltage to generate low-voltage chipset or RAM supplies in notebook computers.ilM嘉泰姆
      The CXSD62108 provides excellent transient response and accurate DCilM嘉泰姆
voltage output in either PFM or PWM Mode.In Pulse Frequency Mode (PFM),ilM嘉泰姆
the CXSD62108 provides very high efficiency over light to heavy loads with ilM嘉泰姆

loading-modulated switching frequencies. In PWM Mode, the converter worksilM嘉泰姆

nearly at constant frequency for low-noise requirements.ilM嘉泰姆
    The CXSD62108 is equipped with accurate positive current-limit, outputilM嘉泰姆
under-voltage, and output over-voltage protections, perfect for NB applications.ilM嘉泰姆
The Power-On-Reset function monitors the voltage on VCC and PVCC toilM嘉泰姆
prevent wrong operation during power-on. The CXSD62108 has a 1.2ms digitalilM嘉泰姆
soft-start and built-in an integrated output discharge device for soft-stop. An ilM嘉泰姆

internal integrated soft-start ramps up the output voltage with programmable ilM嘉泰姆

slew rate to reduce the start-up current. A soft-stop function actively ilM嘉泰姆

discharges the output capacitors.ilM嘉泰姆
       The CXSD62108 is available in 14pin TSSOP, 14pin QFN and 16pin TQFNilM嘉泰姆
packages respectively.ilM嘉泰姆
二.产品特点(Features)ilM嘉泰姆
Adjustable Output Voltage from +0.75V to +5.5VilM嘉泰姆
- 0.75V Reference VoltageilM嘉泰姆
- ±1% Accuracy Over-TemperatureilM嘉泰姆
Operates from An Input Battery Voltage Range ofilM嘉泰姆
+1.8V to +28VilM嘉泰姆
Power-On-Reset Monitoring on VCC Pin and PVCC PinilM嘉泰姆
Excellent Line and Load Transient ResponsesilM嘉泰姆
PFM Mode for Increased Light Load EfficiencyilM嘉泰姆
Programmable PWM Frequency from 100kHz to 500kHzilM嘉泰姆
Integrated MOSFET DriversilM嘉泰姆
Integrated Bootstrap Forward P-CH MOSFETilM嘉泰姆
Adjustable Integrated Soft-Start and Soft-StopilM嘉泰姆
Selectable Forced PWM or Automatic PFM/PWM ModeilM嘉泰姆
Power Good MonitoringilM嘉泰姆
70% Under-Voltage ProtectionilM嘉泰姆
125% Over-Voltage ProtectionilM嘉泰姆
Adjustable Current-Limit ProtectionilM嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)ilM嘉泰姆
Over-Temperature ProtectionilM嘉泰姆
TSSOP-14, QFN3.5x3.5-14, and TQFN3x3-16 PackagesilM嘉泰姆
Lead Free and Green Devices Available (RoHS Compliant)ilM嘉泰姆
三,应用范围 (Applications)ilM嘉泰姆
NotebookilM嘉泰姆
Table PCilM嘉泰姆
Hand-Held PortableilM嘉泰姆
AIO PCilM嘉泰姆
四.下载产品资料PDF文档 ilM嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持ilM嘉泰姆

 QQ截图20160419174301.jpgilM嘉泰姆

五,产品封装图 (Package)ilM嘉泰姆

blob.pngilM嘉泰姆

六.电路原理图ilM嘉泰姆


blob.pngilM嘉泰姆
七,功能概述ilM嘉泰姆


Layout Consideration (Cont.)ilM嘉泰姆
· The signals going through theses traces have both high dv/dt and high di/dt with high peak charging and dis-ilM嘉泰姆
charging current. The traces from the gate drivers to the MOSFETs (UGATE and LGATE) should be short and wide.ilM嘉泰姆
· Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Minimiz-ilM嘉泰姆
ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node. InilM嘉泰姆
addition, the large layout plane between the drain of the MOSFETs (VIN and PHASE nodes) can get better heatilM嘉泰姆
sinking.ilM嘉泰姆
· The PGND is the current sensing circuit reference ground and also the power ground of the LGATE low-ilM嘉泰姆
side MOSFET. On the hand, the PGND trace should be a separate trace and independently go to the source of theilM嘉泰姆
low-side MOSFET. Besides, the current sense resistor should be close to OCSET pin to avoid parasitic capaci-ilM嘉泰姆
tor effect and noise coupling.ilM嘉泰姆
· Decoupling capacitors, the resistor-divider, and boot capacitor should be close to their pins. (For example, placeilM嘉泰姆
the decoupling ceramic capacitor close to the drain of the high-side MOSFET as close as possible.)ilM嘉泰姆
· The input bulk capacitors should be close to the drain of the high-side MOSFET, and the output bulk capacitorsilM嘉泰姆
should be close to the loads. The input capacitor’s ground should be close to the grounds of the output capacitorsilM嘉泰姆
and low-side MOSFET.ilM嘉泰姆
· Locate the resistor-divider close to the FB pin to mini-mize the high impedance trace. In addition, FB pin tracesilM嘉泰姆
can’t be close to the switching signal traces (UGATE, LGATE, BOOT, and PHASE).ilM嘉泰姆
八,相关产品                      更多同类产品...... ilM嘉泰姆


Switching Regulator >   Buck ControllerilM嘉泰姆

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ArchiilM嘉泰姆

tectuilM嘉泰姆

PhaseilM嘉泰姆

No.ofilM嘉泰姆

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OutputilM嘉泰姆

Output ilM嘉泰姆

CurrentilM嘉泰姆

(A) ilM嘉泰姆

InputilM嘉泰姆

Voltage (V) ilM嘉泰姆

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CurrentilM嘉泰姆

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CXSD6273ilM嘉泰姆

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QFN4x4-16ilM嘉泰姆

VM    ilM嘉泰姆

1   ilM嘉泰姆

1     ilM嘉泰姆

30ilM嘉泰姆

2.9    ilM嘉泰姆

13.2ilM嘉泰姆

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12     ilM嘉泰姆

8000ilM嘉泰姆

CXSD6274ilM嘉泰姆

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13.2 ilM嘉泰姆

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12ilM嘉泰姆

5000ilM嘉泰姆

CXSD6274CilM嘉泰姆

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1ilM嘉泰姆

20ilM嘉泰姆

2.9ilM嘉泰姆

13.2ilM嘉泰姆

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12ilM嘉泰姆

5000ilM嘉泰姆

CXSD6275ilM嘉泰姆

QFN4x4-24ilM嘉泰姆

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60ilM嘉泰姆

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CXSD6276ilM嘉泰姆

SOP-8ilM嘉泰姆

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20ilM嘉泰姆

2.2ilM嘉泰姆

13.2ilM嘉泰姆

0.8ilM嘉泰姆

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CXSD6277/A/BilM嘉泰姆

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5ilM嘉泰姆

5ilM嘉泰姆

13.2ilM嘉泰姆

1.25|0.8ilM嘉泰姆

5~12ilM嘉泰姆

3000ilM嘉泰姆

CXSD6278ilM嘉泰姆

SOP-8ilM嘉泰姆

VMilM嘉泰姆

1ilM嘉泰姆

1ilM嘉泰姆

10ilM嘉泰姆

3.3ilM嘉泰姆

5.5ilM嘉泰姆

0.8ilM嘉泰姆

5ilM嘉泰姆

2100ilM嘉泰姆

CXSD6279BilM嘉泰姆

SOP-14ilM嘉泰姆

VM   ilM嘉泰姆

1ilM嘉泰姆

1ilM嘉泰姆

10ilM嘉泰姆

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13.2ilM嘉泰姆

0.8ilM嘉泰姆

12ilM嘉泰姆

2000ilM嘉泰姆

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1ilM嘉泰姆

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13.2ilM嘉泰姆

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5~12ilM嘉泰姆

4000ilM嘉泰姆

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SOP14ilM嘉泰姆

QSOP16ilM嘉泰姆

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30ilM嘉泰姆

2.9ilM嘉泰姆

13.2ilM嘉泰姆

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12ilM嘉泰姆

4000ilM嘉泰姆

CXSD6282ilM嘉泰姆

SOP-14ilM嘉泰姆

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1ilM嘉泰姆

1ilM嘉泰姆

30ilM嘉泰姆

2.2ilM嘉泰姆

13.2ilM嘉泰姆

0.6ilM嘉泰姆

12ilM嘉泰姆

5000ilM嘉泰姆

CXSD6282AilM嘉泰姆

SOP-14ilM嘉泰姆

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2.2ilM嘉泰姆

13.2ilM嘉泰姆

0.6ilM嘉泰姆

12ilM嘉泰姆

5000ilM嘉泰姆

CXSD6283ilM嘉泰姆

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13.2ilM嘉泰姆

1.2ilM嘉泰姆

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1ilM嘉泰姆

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24ilM嘉泰姆

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4000ilM嘉泰姆

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